Results 1 to 10 of about 1,609 (96)

A Timing-Based Split-Path Sensing Circuit for STT-MRAM. [PDF]

open access: yesMicromachines (Basel), 2022
Spin-transfer torque magnetoresistive random access memory (STT-MRAM) applications have received considerable attention as a possible alternative for universal memory applications because they offer a cost advantage comparable to that of a dynamic RAM ...
Ishdorj B, Kim J, Kim JH, Na T.
europepmc   +2 more sources

Binary-Weighted Neural Networks Using FeRAM Array for Low-Power AI Computing. [PDF]

open access: yesNanomaterials (Basel)
Artificial intelligence (AI) has become ubiquitous in modern computing systems, from high-performance data centers to resource-constrained edge devices.
Cho SM   +5 more
europepmc   +2 more sources

L2C2: Last-level compressed-contents non-volatile cache and a procedure to forecast performance and lifetime. [PDF]

open access: yesPLoS One, 2023
Several emerging non-volatile (NV) memory technologies are rising as interesting alternatives to build the Last-Level Cache (LLC). Their advantages, compared to SRAM memory, are higher density and lower static power, but write operations wear out the ...
Escuin C   +5 more
europepmc   +2 more sources

HOPE: Holistic STT-RAM Architecture Exploration Framework for Future Cross-Platform Analysis

open access: yesIEEE Access
Spin Transfer Torque Random Access Memory (STT-RAM) is an emerging Non-Volatile Memory (NVM) technology that has garnered attention to overcome the drawbacks of conventional CMOS-based technologies.
Aftab, Asad   +3 more
core   +3 more sources

EXTENT: Enabling Approximation-Oriented Energy Efficient STT-RAM Write Circuit

open access: yesIEEE Access, 2022
Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density.
Saeed Seyedfaraji   +3 more
doaj   +1 more source

Improving Bit-Error-Rate Performance Using Modulation Coding Techniques for Spin-Torque Transfer Magnetic Random Access Memory

open access: yesIEEE Access, 2023
In non-volatile random-access memory (RAM) technologies, the spin-torque transfer magnetic random-access memory (STT-MRAM) is a promising candidate. STT-MRAM has attracted attention owing to its advantages, such as a high density, high endurance, and ...
Thien An Nguyen, Jaejin Lee
doaj   +1 more source

Statistical Behavior Guided Block Allocation in Hybrid Cache-Based Edge Computing for Cyber-Physical-Social Systems

open access: yesIEEE Access, 2020
In Cyber-Physical-Social Systems (CPSS), large-scale data are continually generated from edge computing devices in our daily lives. These heterogeneous data collected from CPSS are urgently needed to be processed efficiently with low power consumption ...
Fanfan Shen, Chao Xu, Jun Zhang
doaj   +1 more source

Reuse Detector: improving the management of STT-RAM SLLCs [PDF]

open access: yes, 2018
Various constraints of Static Random Access Memory (SRAM) are leading to consider new memory technologies as candidates for building on-chip shared last-level caches (SLLCs).
Castro, Fernando   +10 more
core   +5 more sources

STT-BSNN: An In-Memory Deep Binary Spiking Neural Network Based on STT-MRAM

open access: yesIEEE Access, 2021
This paper proposes an in-memory binary spiking neural network (BSNN) based on spin-transfer-torque magnetoresistive RAM (STT-MRAM). We propose residual BSNN learning using a surrogate gradient that shortens the time steps in the BSNN while maintaining ...
Van-Tinh Nguyen   +3 more
doaj   +1 more source

High Bandwidth and Highly Available Packet Buffer Design Using Multi-Retention Time MRAM

open access: yesIEEE Access, 2023
Significant challenges are posed in the design of routers and switches by the explosive growth of internet traffic and the stringent requirements for high availability in the research area of computer networks.
Yongwoon Song, Munhyung Lee, Hyukjun Lee
doaj   +1 more source

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