Results 131 to 140 of about 1,678 (162)

STT-RAM read stability in DRAM operating region

2015 15th Non-Volatile Memory Technology Symposium (NVMTS), 2015
Spin-transfer-torque RAM (STT-RAM) is the most promising candidate for replacing DRAM while gaining an additional function of non-volatility. The relationship between rapid increase of spin-inversion current and stability of read operation (read disturbance) in the DRAM-array operating time region of less than 10 ns (i.e., "fast" region) was examined ...
H. Kazama, T. Kawahara
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STT-RAM CELL DESIGN CONSIDERING MTJ ASYMMETRIC SWITCHING

SPIN, 2012
As one promising candidate for next-generation nonvolatile memory technologies, spin-transfer torque random access memory (STT-RAM) has demonstrated many attractive features, such as nanosecond access time, high integration density, nonvolatility, and good CMOS process compatibility.
YAOJUN ZHANG, WUJIE WEN, YIRAN CHEN
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Asymmetry in STT-RAM Cell Operations

2013
Spin-transfer torque random access memory (STT-RAM) has emerged as a promising technology to replace SRAM and DRAM in embedded memory applications. In STT-RAM, the data are stored in a magnetic device (magnetic tunneling junction or MTJ) as different resistance states.
Yaojun Zhang, Wujie Wen, Yiran Chen
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Architecture design with STT-RAM: Opportunities and challenges

2016 21st Asia and South Pacific Design Automation Conference (ASP-DAC), 2016
The emerging spin-transfer torque magnetic random-access memory (STT-RAM) has attracted a lot of interest from both academia and industry in recent years. It has been considered as a promising replacement of SRAM and DRAM in the cache and memory system design thanks to many advantages, including non-volatility, low leakage power, SRAM comparable read ...
Ping Chi, Shuangchen Li, null Yuanqing Cheng, null Yu Lu, Seung H. Kang, Yuan Xie   +5 more
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STT-RAM device performance improvement using CMP process

2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2017
Current scaling challenges for memory technology have led to fast-paced development of alternative memory technologies. STT-RAM is the leading potential candidate to replace static RAM, dynamic RAM and embedded memory due to its non-volatility, high speed, and unlimited endurance.
Sajjad Hassan, Lin Xue, Jaesoo Anh, Mahendra Pakala, Garrett Sin, Motoya Okazaki   +5 more
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Synthesis and Analysis of STT-RAM Switching Characteristics

2016 8th International Conference on Computational Intelligence and Communication Networks (CICN), 2016
Spin transfer torque random access memory is a latest cutting edge memory technology which is suitable to be considered for universal memory. In Spin transfer torque random access memory, the magnetic state of magnetic tunneling junction is switched by passing the spin-polarized current through the junction.
Abdul Kadeer Moin, V. Sulochana, null Anurag   +2 more
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Non-volatile spin-transfer torque RAM (STT-RAM)

68th Device Research Conference, 2010
Non-volatile STT-RAM (spin transfer torque random access memory) is a new memory technology that combines the capacity and cost benefits of DRAM, the fast read and write performance of SRAM and the non-volatility of Flash with essentially unlimited endurance.
E. Chen, D. Lottis, A. Driskill-Smith, D. Druist, V. Nikitin, S. Watts, X. Tang, D. Apalkov   +7 more
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Reinforcement Learning Based Refresh Optimized Volatile STT-RAM Cache

2020 IEEE Computer Society Annual Symposium on VLSI (ISVLSI), 2020
STT-RAM has emerged as a promising alternative to SRAM based on-chip caches across all levels of the cache hierarchy due to its low leakage power, high density and non-volatility. But the high write energy and write latency of STT-RAM is still a hindrance to its wide-scale adoption.
Shashank Suman, Hemangee K. Kapoor
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STT-RAM Cache Hierarchy With Multiretention MTJ Designs

IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2014
Spin-transfer torque random access memory (STT-RAM) is the most promising candidate to be universal memory due to its good scalability, zero standby power, and radiation hardness. Having a cell area only 1/9 to 1/3 that of SRAM, allows for a much larger cache with the same die footprint.
Sun, Z., Bi, X., Li, H., Wong, W.-F., Zhu, X.   +4 more
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Spin-hall assisted STT-RAM design and discussion

2015 IEEE Magnetics Conference (INTERMAG), 2015
Conventional spin-transfer torque random access memory (STT-RAM) is a promising technology due to its non-volatility and dense cell structure. However, the long switching time of magnetic tunneling junction (MTJ) limits the write speed of the STT-RAM.
E. Eken, Y. Zhang, B. Yan, W. Wu, H. Li, Y. Chen   +5 more
openaire   +1 more source