Results 11 to 20 of about 1,678 (162)
Spin-Hall Assisted STT-RAM Design and Discussion [PDF]
Proceedings of the 18th System Level Interconnect Prediction Workshop, 2016 In recent years, Spin-Transfer Torque Random Access Memory (STT-RAM) has attracted significant attentions from both industry and academia due to its attractive attributes such as small cell area and non-volatility. However, long switching time and large programming energy of Magnetic Tunneling Junction (MTJ) continue being major challenges in STT-RAM ...
Enes Eken +6 more
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Multistate spin-transfer-torque random access memory [PDF]
, 2016 Spin-transfer-torque random access memory (STT-RAM) is an emerging non-volatile memory technology that stores information as the relative alignment of two ferromagnets in a magnetic tunnel junction stack.
Asoudegi, Nima
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On the Design of 7/9-Rate Sparse Code for Spin-Torque Transfer Magnetic Random Access Memory
IEEE Access, 2021 A design of 7/9-rate sparse code for spin-torque transfer magnetic random access memory (STT-MRAM) is proposed in this work. The STT-MRAM using spin-polarized current through magnetic tunnel junction (MTJ) to write data is one of the most promising ...
Chi Dinh Nguyen
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Study on Energy Reduction Techniques in STT-RAM
Journal of Physics: Conference Series, 2021 Abstract Spin Transfer Torque Random Access Memory (STT-RAM) is suitable to be considered for cosmic memory. In STT-RAM the altercative period of attractive burrowing intersection is exchanged by the showing up of turn enraptured current over the intersection and it appear to be the most preparing elective with the more thickness and low
Vura Sai Durga Eswar +2 more
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A Survey of Soft-Error Mitigation Techniques for Non-Volatile Memories
Computers, 2017 Non-volatile memories (NVMs) offer superior density and energy characteristics compared to the conventional memories; however, NVMs suffer from severe reliability issues that can easily eclipse their energy efficiency advantages. In this paper, we survey
Sparsh Mittal
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SMART: A Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory
IEEE Access, 2020 The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power operation.
Nikhil Rangarajan +4 more
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A Spintronic 2M/7T Computation-in-Memory Cell
Journal of Low Power Electronics and Applications, 2022 Computing data-intensive applications on the von Neumann architecture lead to significant performance and energy overheads. The concept of computation in memory (CiM) addresses the bottleneck of von Neumann machines by reducing the data movement in the ...
Atousa Jafari +2 more
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HALLS: An Energy-Efficient Highly Adaptable Last Level STT-RAM Cache for Multicore Systems [PDF]
, 1968 Spin-Transfer Torque RAM (STT-RAM) is widely considered a promising alternative to SRAM in the memory hierarchy due to STT-RAM's non-volatility, low leakage power, high density, and fast read speed.
Adegbija, Tosiron, Kuan, Kyle
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A Full-Sensing-Margin Dual-Reference Sensing Scheme for Deeply-Scaled STT-RAM
IEEE Access, 2018 Spin transfer torque-random access memory (STT-RAM) has recently been regarded as one of the most promising non-volatile memory candidates for the next-generation computer architectures.
He Zhang +4 more
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Efficient Logging in Non-Volatile Memory by Exploiting Coherency Protocols [PDF]
, 2017 Non-volatile memory (NVM) technologies such as PCM, ReRAM and STT-RAM allow processors to directly write values to persistent storage at speeds that are significantly faster than previous durable media such as hard drives or SSDs.
Cohen, Nachshon +2 more
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