Results 51 to 60 of about 1,678 (162)
Advanced Intelligent Systems, Volume 8, Issue 2, February 2026.This study investigates the neuromorphic plasticity behavior of 180 nm bulk complementary metal oxide semiconductor (CMOS) transistors at cryogenic temperatures. The observed hysteresis data reveal a signature of synaptic behavior in CMOS transistors at 4 K.
Fiheon Imroze +8 more
wiley +1 more source
Advanced Electronic Materials, Volume 12, Issue 1, 7 January 2026.Processing‐in‐memory (PIM) architectures based on memristors offer significant potential for low‐power computation and the realization of novel computing paradigms by performing logic operations directly within memory. This review summarizes recent advances in memristor‐based logic techniques, with particular emphasis on reliability considerations and ...
Thomas Neuner +5 more
wiley +1 more source
Preventing STT-RAM Last-Level Caches from Port Obstruction [PDF]
ACM Transactions on Architecture and Code Optimization, 2014 Many new nonvolatile memory (NVM) technologies have been heavily studied to replace the power-hungry SRAM/DRAM-based memory hierarchy in today's computers. Among various emerging NVM technologies, Spin-Transfer Torque RAM (STT-RAM) has many benefits, such as fast read latency, low leakage power, and high density, making it a promising ...
Wang, Jue, Dong, Xiangyu, Xie, Yuan
openaire +2 more sources
Ferroelectric HZO Thin Films for FEFETs: Crystal Structure‐Device Performance Relationship
Advanced Electronic Materials, Volume 12, Issue 1, 7 January 2026.Crystal Structure of HZO Thin Films Methods of Thin Film Deposition 1T‐FeFET Design Influence on Ferroelectric Properties FeFET Applications Recent Advances and Challenges ORTHORHOMBIC HEARTBEAT. Abstract The rapid development of hafnium zirconium oxide (HZO) thin films has established ferroelectric field‐effect transistors (FeFETs) as strong ...
Harsha Ragini Aturi +2 more
wiley +1 more source
Fatigue &Fracture of Engineering Materials &Structures, Volume 49, Issue 1, Page 84-101, January 2026.ABSTRACT In the field of composite structure fatigue simulations, progressive damage models are common tools. However, these models are dependent on the definition of meta parameters, such as the residual stiffness following an interfiber failure mode. This study presents a progressive damage model utilizing shell elements, with the material parameters
Richard Fink +2 more
wiley +1 more source
The measurement of agitation in neurocognitive disorders: A systematic review
Alzheimer's &Dementia, Volume 21, Issue S3, December 2025.Abstract Background Agitation is a common and distressing behavior in persons with neurocognitive disorders. However, efforts to understand and develop interventions for agitation, historically considered only as a symptom, have been complicated by heterogeneity in the definition, identification, and measurement of agitation.
Dylan X. Guan +24 more
wiley +1 more source
Ultrafast and low-energy switching in voltage-controlled elliptical pMTJ
, 2017 Switching magnetization in a perpendicular magnetic tunnel junction (pMTJ) via voltage controlled magnetic anisotropy (VCMA) has shown the potential to markedly reduce the switching energy.
Deng, Jiefang +2 more
core +1 more source
Parity-time symmetry breaking in magnetic systems
, 2016 The understanding of out-of-equilibrium physics, especially dynamic instabilities and dynamic phase transitions, is one of the major challenges of contemporary science, spanning the broadest wealth of research areas that range from quantum optics to ...
Galda, Alexey, Vinokur, Valerii M.
core +1 more source
Write management mechanisms for systems with non-volatile memory technologies
Journal of Computer Science and Technology, 2017 Since the beginning of computer systems, the memory subsystem has always been one of their essential components. However, the different pace of change between microprocessor and memory has become one of the greatest challenges that current designers have
Roberto Alonso Rodríguez Rodríguez
doaj
Deterministic Writing of Field‐Free and Unipolar Spin‐Transfer Torque Magnetic Random‐Access Memory
Advanced Functional Materials, Volume 35, Issue 37, September 11, 2025.Deterministic unipolar‐switching STT‐MRAM with field‐free operation is experimentally demonstrated. The device features a compact 4F2 cell architecture using a diode as the access device and a single magnetic tunneling junction. Unlike conventional bipolar switching STT‐MRAM requiring a three‐terminal access transistor in the array, this design offers ...
Ming‐Chun Hong +22 more
wiley +1 more source