Results 91 to 100 of about 13,751 (195)

Doping‐Free Polymer Nanoparticle Engineering of n‐Type Organic Mixed Ion–Electron Conductors for Enhancement‐Mode Organic Electrochemical Transistors

Macromolecular Rapid Communications, EarlyView.
We report a nanoparticle formulation strategy for the ladder polymer BBL that enables undoped enhancement‐mode OECTs. Controlled reprecipitation with DBSA yields stable nanoparticles, and spray‐coating forms dense, well‐connected films. The resulting devices exhibit strongly enhanced electrochemical response and transconductance, establishing a ...
Shunsuke Yamamoto, Katsumi Abe, Masaya Mitsuishi   +2 more
wiley   +1 more source

Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors

, 2010
Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance.
A Javey, Alexandra C. Ford, Ali Javey, D-H Kim, D-H Kim, D-H Kim, E Yablonovitch, Elena Plis, G Balakrishnan, GC DeSalvo, GK Celler, H Yonezu, H-C Yuan, Ha Sul Kim, Hui Fang, Hyunhyub Ko, J Yoon, K Martens, K Yoh, Kartik Ganapathi, Kuniharu Takei, M Heyns, M Lundstrom, M Lundstrom, M Radosavljevic, M Yokoyama, MA Meitl, Morten Madsen, MP Mikhailova, N Melosh, P Javorka, Paul W. Leu, PH-S Wong, R Chau, Rehan Kapadia, Sanjay Krishna, Sayeef Salahuddin, Steven Chuang, Szu-Ying Chen, T Bryllert, TN Theis, Y Liu, Y-L Chueh, YQ Wu, Yu-Lun Chueh   +44 more
core   +1 more source

Advances in Gate Dielectrics for 2D Electronics

physica status solidi (RRL) – Rapid Research Letters, EarlyView.
This review discusses advanced gate dielectric integration for 2D electronic devices, including layered and nonlayered dielectric materials, while highlighting strategies such as seed‐assisted ALD, transfer methods, and in situ oxidation. By focusing on interface engineering and materials innovation, new routes for scalable, high‐performance 2D ...
Moon‐Chul Jung, Jiwoo Kim, Gwan‐Hyoung Lee   +2 more
wiley   +1 more source

Design and performance analysis of a vertically stacked gate-all-around nanosheet FET with embedded nanocavity for biosensing applications

Scientific Reports
In this article, we designed and analyzed a Vertically Stacked Gate All Around Dielectric Modulated Nano Sheet Field Effect Transistor (DM-NSFET) based biosensor through TCAD simulations. The DM-NSFET is designed for detection of Cancer biomolecules like
Rudra Lakshmi Prasanna, Srinivasa Rao Karumuri, Vakkalakula Bharath Sreenivasulu, Girija Sravani Kondaveeti   +3 more
doaj   +1 more source

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

Small, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong, Maheswari Sivan, Jieming Pan, Zihang Fang, Jianan Li, Zefeng Xu, Shi Zhao, Quanzhen Wan, Evgeny Zamburg, Aaron Voon‐Yew Thean   +9 more
wiley   +1 more source

Silicene Nanomesh

, 2015
Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal that a band gap is opened in silicene nanomesh (SNM) when the width W of the ...
Chen, Changle, Jiang, Kaili, Lu, Jing, Ma, Jianhua, Ni, Zeyuan, Pan, Feng, Quhe, Ruge, Shi, Junjie, Wang, Yangyang, Yang, Jinbo, Zheng, Jiaxin   +10 more
core   +1 more source

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

Advanced Functional Materials, Volume 36, Issue 10, 2 February 2026.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang, Jaerok Kim, Sang‐Min Lee, Sungpyo Baek, Saeroonter Oh, Yoonmyung Lee, Sungjoo Lee   +6 more
wiley   +1 more source

High Mobility Ge pMOSFETs with ZrO2 Dielectric: Impacts of Post Annealing

Nanoscale Research Letters, 2019
This paper investigates the impacts of post metal annealing (PMA) and post deposition annealing (PDA) on the electrical performance of Ge p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) with ZrO2 dielectric.
Huan Liu, Genquan Han, Yan Liu, Yue Hao
doaj   +1 more source

Single Particle Transport in Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor

, 2013
The single particle tunneling in a vertical stack consisting of monolayers of two-dimensional semiconductors is studied theoretically and its application to a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor (Thin-TFET ...
Esseni, David, Jena, Debdeep, Li, Mingda, Snider, Gregory, Xing, Huili Grace   +4 more
core   +1 more source

Effects of Charge Trapping at the MoS2–SiO2 Interface on the Stability of Subthreshold Swing of MoS2 Field Effect Transistors

Materials, 2020
The stability of the subthreshold swing (SS) is quite important for switch and memory applications in logic circuits. The SS in our MoS2 field effect transistor (FET) is enlarged when the gate voltage sweep range expands towards the negative direction ...
Xin-nan Huang, Yao Yao, Song-ang Peng, Dayong Zhang, Jingyuan Shi, Zhi Jin   +5 more
semanticscholar   +1 more source