Results 101 to 110 of about 13,751 (195)

Ultralow subthreshold swing of 9 mV/dec for planar bulk GaAs MOSFETs at 4 K in quantum computing applications [PDF]

APL Electronic Devices
A record-low subthreshold swing (SS) of 9 mV/dec at 4 K has been achieved in planar bulk GaAs metal–oxide–semiconductor field-effect transistors (MOSFETs). The measured SS in our devices decreased with temperature, from 60 mV/dec at 300 K to 19 mV/dec at
L. B. Young, M. Hong, J. Kwo, M. J. Wang, H. W. Chang, K. M. Chen, B. Y. Chen, Y. T. Cheng, J. Liu, H. W. Wan, Y. H. G. Lin   +10 more
doaj   +1 more source

Transistor Switches using Active Piezoelectric Gate Barriers

, 2015
This work explores the consequences of introducing a piezoelectric gate barrier in a normal field-effect transistor. Because of the positive feedback of strain and piezoelectric charge, internal charge amplification occurs in such an electromechanical ...
Ajoy, Arvind, Jana, Raj K., Jena, Debdeep, Snider, Gregory   +3 more
core   +1 more source

Ferroelectrics Hybrids: Harnessing Multifunctionality of 2D Semiconductors in the Post‐Moore Era

Advanced Materials, Volume 38, Issue 7, 2 February 2026.
In this Review, the state of art of ferroelectric hybrid systems—combining ferroelectrics, 2D semiconductors, and molecular switches is presented—as next‐generation platforms for high‐density, multifunctional electronics. By discussing 2D FeFET applications, nanoscale material downscaling, M3D integration, and emerging ferroelectrics, it highlights ...
Haixin Qiu, Xiaoshi Qian, Dahong Qian, Paolo Samorì   +3 more
wiley   +1 more source

Long‐Channel Effects in Randomly Oriented Carbon Nanotube Thin Film Transistors

Advanced Electronic Materials
Carbon nanotube (CNT) thin film transistors (TFTs) have demonstrated great potential for application in highly sensitive biosensors and large‐area electronics.
Hai‐Yang Liu, Panpan Zhang, Xianmao Cao, Yang Zhang, Jianping He, Maguang Zhu, Mengmeng Xiao, Zhiyong Zhang   +7 more
doaj   +1 more source

A Van der Waals Material Exhibiting Room Temperature Broken Inversion Symmetry with Ferroelectricity

Advanced Science, Volume 13, Issue 9, 13 February 2026.
This study reports a βp$\ubeta^{\text{p}}$ phase of indium selenide showing ferroelectricity over large areas at room temperature in a low‐dimensional limit. It is found that indium selenide films with βp$\ubeta^{\text{p}}$ layers display electric field‐induced switchable polarization characteristic of ferroelectric materials, suggesting the breaking ...
Fabia F. Athena, Cooper A. Voigt, Mengkun Tian, Anjan Goswami, Emily Toph, Moses Nnaji, Fanuel Mammo, Brent K. Wagner, Sungho Jeon, Wenshan Cai, Eric M. Vogel   +10 more
wiley   +1 more source

Al Nanoparticle‐Decorated Metal Oxide Synaptic Transistors for Ultralow‐Energy Neuromorphic Computing with Wide Dynamic Range

Advanced Science, Volume 13, Issue 9, 13 February 2026.
A nanoparticle‐engineered electrolyte‐gated memtransistor is introduced as a materials‐level strategy to overcome the intrinsic trade‐off between energy consumption and synaptic precision. By embedding aluminum nanoparticles at the oxide–electrolyte interface to modulate ion trapping dynamics, the device achieves stable multistate plasticity under ...
Jun‐Gyu Choi, Yoonseok Song, Seokhyeon Baek, Jingon Jang, Sungjun Park   +4 more
wiley   +1 more source

ALD Reactivity‐Driven 2DEG‐Like Interfacial Conduction in Nanolaminate InGaZnO Transistors toward High‐Mobility and Stable Oxide Electronics

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
By directly comparing PEALD (P‐IGZO) and thermal‐ALD (T‐IGZO), we show that oxidant reactivity governs atomically ordered InOx–(Ga, Zn)O nanolaminates and a robust 2DEG in amorphous IGZO. PEALD with oxygen plasma forms sharper, chemically distinct interfaces and higher InOx connectivity, achieving ∼90 cm2 V−1 s−1 mobility and superior BTI stability ...
Yoon‐Seo Kim, Daejung Kim, Ki‐Cheol Song, Yeonhee Lee, Hyeong‐Suk Yoo, Young Jae Kim, Jonghoon Kim, Jin‐Seong Park   +7 more
wiley   +1 more source

Effect of Gate Length Relative to Recess Coverage on the Performance of Enhancement‐Mode β‐Ga2O3 MOSFETs

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
Gate‐length engineering in recessed‐gate enhancement‐mode β‐Ga2O3 metal‐oxide‐semiconductor filed effect transistors was investigated by extending the gate to fully cover the etched recess. Complete recess coverage improves electrostatic control, reduces series resistance, shifts the threshold voltage positively, and enhances mobility, on‐resistance ...
Ching‐Hsuan Lee, Sheng‐Ti Chung, Siddharth Rana, Chien‐Nan Hsiao, Tejender Singh Rawat, Yi‐Kai Hsiao, Hao‐Chung Kuo, Ray‐Hua Horng   +7 more
wiley   +1 more source

Fabrication and Characterization of Stacked Poly-Si Nanosheet With Gate-All-Around and Multi-Gate Junctionless Field Effect Transistors

IEEE Journal of the Electron Devices Society, 2019
Present work demonstrates the vertically double stacked nanosheet (NS) p-channel polycrystalline silicon (poly-Si) junctionless field-effect transistors (JL-FET) with tri-gate, omega-gate, and gate all around (GAA) structure.
Meng-Ju Tsai, Kang-Hui Peng, Chong-Jhe Sun, Siao-Cheng Yan, Chieng-Chung Hsu, Yu-Ru Lin, Yu-Hsien Lin, Yung-Chun Wu   +7 more
doaj   +1 more source

Bayesian Inference via GeTex‐OTS Based Stochastic Synapse for Uncertainty‐Aware Medical Diagnostics

SmartMat, Volume 7, Issue 1, February 2026.
This work reports a GeTex ovonic threshold switch integrated into a compact 1S1T1R stochastic synapse that directly realizes an MC‐Dropconnect Bayesian neural network. Tunable probabilistic switching enables uncertainty‐aware COVID‐19 diagnosis and MNIST recognition while remaining compatible with conventional 1T1R CIM architectures, highlighting a ...
Xinyu Wen, Lun Wang, Kuan Wang, Vivian Zhao, Zixuan Liu, Kexun He, Jianguo Yang, Hao Tong, Xiangshui Miao, Yuhui He   +9 more
wiley   +1 more source