Remarkably High Effective Mobility of 301 cm2/V·s in 3 nm Ultra-Thin-Body SnO2 Transistor by UV Annealing. [PDF]
Nanomaterials (Basel)Shih AC, Zhan YH, Chin A.
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Design and analysis of high-k wrapped underlap induced GaN multi-channel GAA nanosheet FET for enhanced performance with cut-off frequency in THz range. [PDF]
Sci RepSingh S, Dhar RS, Banerjee A, Gupta V.
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Controllable growth of MoO<sub>3</sub> dielectrics with sub-1 nm equivalent oxide thickness for 2D electronics. [PDF]
Nat CommunLi X +7 more
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Performance Analysis and Optimization of an InGaAs/GaAsSb Heterojunction Dopingless Tunnel FET with a Heterogate Dielectric. [PDF]
Micromachines (Basel)Huang J +5 more
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Ge/In<sub>0.53</sub>Ga<sub>0.47</sub>As heterojunction based doping less TFET for high sensitivity label free biosensing applications. [PDF]
Sci RepJaya M, Lorenzo R.
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Advancing 2D CMOS electronics with high-performance p-type transistors. [PDF]
Nat CommunJiang J +6 more
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Engineering the ferroelectric polarization to optimize the GIDL and negative output conductance in negative capacitance FET. [PDF]
Sci RepThota VS, Moparthi S, Ghosh K.
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Role of the channel on the memory window of HfZrO<sub>x</sub> ferroelectric field-effect transistors with p-type Si-doped InZnO<sub>x</sub> channel. [PDF]
Sci RepPark H, Lim S, Lee S, Lee JW, Woo J.
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Effects of Annealing Temperature Combinations in InO<sub>x</sub>/AlO<sub>x</sub> Heterostructure for High-Performance and Stable Solution-Processed Junctionless Transistors. [PDF]
Materials (Basel)Park J +8 more
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Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS2 Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments. [PDF]
Micromachines (Basel)Tamersit K +3 more
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