IEEE Journal of the Electron Devices Society, 2022 In this article, sub-10 nm top width nanowire In0.53Ga0.47As gate-all-around (GAA) MOSFETs with improved subthreshold characteristics and reliability are demonstrated.
Hua-Lun Ko +7 more
doaj +1 more source
On the relation between rf noise and subthreshold swing in InP HEMTs for cryogenic LNAs
Asia-Pacific Microwave Conference, 2022 4 – 8 GHz low-noise amplifiers (LNAs) based on InP high electron mobility transistors (InP HEMTs) with different spacer thickness in the InAlAs-InGaAs heterostructure were fabricated and characterized at 5 K.
Jianing Li +4 more
semanticscholar +1 more source
Polarization Gradient Effect of Negative Capacitance LTFET
Micromachines, 2022 In this paper, an L-shaped tunneling field effect transistor (LTFET) with ferroelectric gate oxide layer (Si: HfO2) is proposed. The electric characteristic of NC-LTFET is analyzed using Synopsys Sentaurus TCAD.
Hao Zhang +8 more
doaj +1 more source
Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors [PDF]
, 2014 Alloying of In/Zn oxides with various X atoms stabilizes the IXZO structures but generates electron traps in the compounds, degrading the electron mobility.
Benwadih, Mohammed +4 more
core +3 more sources
Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature
Membranes, 2021 Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility (μsat) of 7.9 cm2/V·s, an Ion/Ioff ratio of 4.58 ...
Honglong Ning +9 more
doaj +1 more source
Membranes, 2021 By a sol–gel method, a BiFeO3 (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7–28% subthreshold swing (
Tsung-Kuei Kang +6 more
doaj +1 more source
Charge trapping mechanism leading to sub-60-mV/decade-Swing FETs [PDF]
, 2017 In this work, we present a novel method to reduce the subthreshold swing of field-effect transistors below 60 mV/dec. Through modeling, we directly relate trap charge movement between the gate electrode and the gate dielectric to subthreshold swing ...
Cantarella, Giuseppe +8 more
core +1 more source
Reversible writing of high-mobility and high-carrier-density doping patterns in two-dimensional van der Waals heterostructures [PDF]
, 2020 A key feature of two-dimensional materials is that the sign and concentration of their carriers can be externally controlled with techniques such as electrostatic gating.
Crommie, MF +10 more
core
Scalability of Atomic-Thin-Body (ATB) Transistors Based on Graphene Nanoribbons
, 2010 A general solution for the electrostatic potential in an atomic-thin-body (ATB) field-effect transistor geometry is presented. The effective electrostatic scaling length, {\lambda}eff, is extracted from the analytical model, which cannot be approximated ...
Koester, Steven J. +4 more
core +1 more source
Impact of Edge States on Device Performance of Phosphorene Heterojunction Tunneling Field Effect Transistors [PDF]
, 2016 Black phosphorus (BP) tunneling transistors (TFETs) using heterojunction (He) are investigated by atomistic quantum transport simulations. It is observed that edge states have a great impact on transport characteristics of BP He-TFETs, which result in ...
Guo, Hong, Liu, Fei, Wang, Jian
core +2 more sources