Results 41 to 50 of about 13,751 (195)

Investigation on the Hump Behavior of Gate-Normal Nanowire Tunnel Field-Effect Transistors (NWTFETs)

Applied Sciences, 2020
The hump behavior of gate-normal nanowire tunnel field-effect transistors (NWTFETs) is investigated by using a three-dimensional technology computer-aided design (TCAD) simulation.
Min Woo Kang, Woo Young Choi
doaj   +1 more source

Steep-slope Hysteresis-free Negative Capacitance MoS2 Transistors

, 2017
The so-called Boltzmann Tyranny defines the fundamental thermionic limit of the subthreshold slope (SS) of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV/dec at room temperature and, therefore, precludes the lowering of the supply ...
Alam, Muhammad A., Conrad, Nathan J., Jiang, Chunsheng, Maize, Kerry D., Qiu, Gang, Shakouri, Ali, Si, Mengwei, Su, Chun-Jung, Wu, Chien-Ting, Ye, Peide D., Zhou, Hong   +10 more
core   +1 more source

Modeling of current—voltage characteristics for double‐gate a‐IGZO TFTs and its application to AMLCDs [PDF]

, 2012
Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/92033/1/JSID20.5.237 ...
Baek, Gwanghyeon, Kanicki, Jerzy
core   +1 more source

The Effect of Sampling Interval and Various Difference Approximation Methods on Extracting the Subthreshold Swing in InGaZnO Thin Film Transistor

IEEE Access, 2021
In this work, the effect of gate voltage sampling interval ( $\Delta \text{V}_{\mathrm {gs}}$ ) and various difference approximation methods on extracting the value of subthreshold swing (SS) have been investigated in detail for InGaZnO thin film ...
Chang Liu, Yiming Liu, Song Wei, Yi Zhao
doaj   +1 more source

Computational Study of Tunneling Transistor Based on Graphene Nanoribbon

, 2009
Tunneling field-effect transistors (FETs) have been intensely explored recently due to its potential to address power concerns in nanoelectronics.
Appenzeller J., Appenzeller J., Berger C., Choi W. Y., Datta S., Datta S. S., Fiori G., Gunlycke D., Han M. Y., Javey A., Koswatta S. O., Koswatta S. O., Li X., Liang G. C., Lin Y.-M., Lu Y. R., Novoselov K. S., Ouyang Y., Poli S., Son Y. W., Taur Y., Wang X., Yan Q., Zhang Q., Zhang Y. B.   +24 more
core   +1 more source

DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As

Holos, 2018
Using calibrated simulations, we report the In0.35Ga0.65As based tunnel field-effect transistor (TFET) with thin δ-doped n+ pocket at the source-channel interface to improve the parameters such as  on current (Ion), off-current (Ioff) and subthreshold ...
Behnam Dorostkar, Saeid Marjani
doaj   +1 more source

Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric

Membranes, 2021
In this paper, an InGaZnO thin-film transistor (TFT) based on plasma oxidation of silicon nitride (SiNx) gate dielectric with small subthreshold swing (SS) and enhanced stability under negative bias illumination stress (NBIS) have been investigated in ...
Yiming Liu, Chang Liu, Houyun Qin, Chong Peng, Ming-Pei Lu, Zha-Kun Chen, Yi Zhao   +6 more
semanticscholar   +1 more source

A New Figure of Merit, ${\Delta V_{\text {DIBLSS}} /(I_{\rm {d},{\mathrm{ sat}}} /I_{\rm {sd},{\mathrm{ leak}}} )}$ , to Characterize Short-Channel Performance of a Bulk-Si n-Channel FinFET Device

IEEE Journal of the Electron Devices Society, 2017
This paper aims to investigate the device parameters, including drain-induced barrier lowering (DIBL), subthreshold swing (SS), and saturation drive current, Id,sat, of bulk-Si n-channel FinFET devices (bulk n-FinFETs). The impact of lightly doped drain (
Yi-Chuen Eng, Luke Hu, Tzu-Feng Chang, Steven Hsu, Chun Mao Chiou, Ted Wang, Chih-Wei Yang, Chien-Ting Lin, I-Chang Wang, Ming-Chih Chen, Andy Lai, Pei-Wen Wang, Chia-Jung Hsu, Wen-Yuan Pang, Chin-Hao Kuo, Osbert Cheng, Chih-Yi Wang   +16 more
doaj   +1 more source

Electrical performance of III-V gate-all-around nanowire transistors [PDF]

, 2013
The performance of III-V inversion-mode and junctionless nanowire field-effect transistors are investigated using quantum simulations and are compared with those of silicon devices.
Fagas, Gíorgos, Razavi, Pedram
core   +1 more source

Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening [PDF]

IEEE Electron Device Letters, 2019
In the standard MOSFET description of the drain current $ {I}_{{D}}$ as a function of applied gate voltage $ {V}_{{ {GS}}}$ , the subthreshold swing ${{SS(T)}}\equiv {{dV}}_{{{GS}}}/ {d}\log {I}_{ {D}}$ has a fundamental lower limit as a function of
H. Bohuslavskyi, A. Jansen, S. Barraud, V. Barral, M. Cassé, L. Guevel, X. Jehl, L. Hutin, B. Bertrand, G. Billiot, G. Pillonnet, F. Arnaud, P. Galy, S. D. Franceschi, M. Vinet, M. Sanquer   +15 more
semanticscholar   +1 more source