Results 51 to 60 of about 13,751 (195)

Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications †

Sensors, 2018
InAlN/Al/GaN high electron mobility transistors (HEMTs) directly on Si with dynamic threshold voltage for steep subthreshold slope (<60 mV/dec) are demonstrated in this study, and attributed to displacement charge transition effects.
Pin-Guang Chen, Kuan-Ting Chen, Ming Tang, Zheng-Ying Wang, Yu-Chen Chou, Min-Hung Lee   +5 more
doaj   +1 more source

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

Nano letters (Print), 2020
Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by
A. Saeidi, T. Rosca, E. Memišević, I. Stolichnov, M. Cavalieri, L. Wernersson, A. Ionescu   +6 more
semanticscholar   +1 more source

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

Advanced Functional Materials, EarlyView.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak, Ryun‐Han Koo, Youngchan Cho, Changhyeon Han, Dongbin Kim, Soi Jeong, Yunho Shin, Joonhyeok Choi, Jiseong Im, Jonghyun Ko, Jong‐Ho Lee, Jangsaeng Kim, Youngho Kang, Wonjun Shin, Daewoong Kwon   +14 more
wiley   +1 more source

Effects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS Inverter

IEEE Journal of the Electron Devices Society, 2020
In this study, ferroelectric FETs (FeFETs) and CMOS inverters are fabricated and analyzed, exhibiting 13% of 593 devices with sub-60 mV subthreshold swing (SS) at room temperature. Forming gas annealing (FGA) is found to not only enhance ferroelectricity
Po-Jung Sung, Chun-Jung Su, Shih-Hsuan Lo, Fu-Kuo Hsueh, Darsen D. Lu, Yao-Jen Lee, Tien-Sheng Chao   +6 more
doaj   +1 more source

Model of tunneling transistors based on graphene on SiC

, 2010
Recent experiments shown that graphene epitaxially grown on Silicon Carbide (SiC) can exhibit a energy gap of 0.26 eV, making it a promising material for electronics.
Giuseppe Iannaccone, Grassi R., Martina Cheli, Paolo Michetti   +3 more
core   +1 more source

Random dopant-induced variability in Si-InAs nanowire tunnel FETs: a quantum transport simulation study [PDF]

, 2018
In this letter, we report a quantum transport simu- lation study of the impact of Random Discrete Dopants (RDD)s on Si-InAs nanowire p-type Tunnel FETs.
Adamu-Lema, Fikru, Asenov, Asen, Berrada, Salim, Carrillo-Nunez, Hamilton, Georgiev, Vihar P., Lee, Jaehyun, Luisier, Mathieu, Medina-Bailon, Cristina   +7 more
core   +1 more source

Positive-to-negative subthreshold swing of a MOSFET tuned by the ferroelectric switching dynamics of BiFeO3

NPG Asia Materials, 2021
Ferroelectricity can reduce the subthreshold swing ( SS ) of metal-oxide-semiconductor field-effect transistors (MOSFETs) to below the room-temperature Boltzmann limit of ~60 mV/dec and provides an important strategy to achieve a steeper SS ...
Chuanchuan Liu, Yuchen Wang, Haoyang Sun, Chao Ma, Zhen Luo, He Wang, Yuewei Yin, Xiaoguang Li   +7 more
semanticscholar   +1 more source

High‐κ Perovskite‐Like Ternary Niobium Oxide Dielectrics for 2D Electronics

Advanced Materials, EarlyView.
High‐κ dielectrics are vital for scaled electronics. Here, a family of 2D high‐κ perovskite‐like ternary niobium oxides is synthesized via a molten salt‐assisted method. Their integration into FETs and logic gates reveals superior switching characteristics, providing a fresh material platform and new insights for the advancement of high‐performance 2D ...
Biao Zhang, Jianmiao Guo, Jianmin Yan, Jialiang Wang, Chao Yun, Guang Zeng, Jie Li, Cong Wang, Zhengdao Xie, Yanglong Hou, Yang Chai   +10 more
wiley   +1 more source

MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric

, 2011
We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on two-dimensional (2D) layer-structured molybdenum disulfide (MoS2) crystals and MoS2 dual-gate n-channel MOSFETs with ALD Al2O3 as top-gate dielectric.
Liu, Han, Ye, Peide D.
core   +1 more source

Quantum Transport in 40-nm MOSFETs at Deep-Cryogenic Temperatures

, 2020
In this letter, we characterize the electrical properties of commercial bulk 40-nm MOSFETs at room and deep cryogenic temperatures, with a focus on quantum information processing (QIP) applications.
Charbon, Edoardo, Gonzalez-Zalba, M. Fernando, Michniewicz, John, Peng, Yatao, Ruffino, Andrea, Yang, Tsung-Yeh   +5 more
core   +1 more source