Results 61 to 70 of about 13,751 (195)
Advanced Materials Interfaces, EarlyView.MOFs awaken graphene. MOF‐assisted ultrafast laser writing patterns porous laser‐induced graphene with CuO‐active nanodomains, creating an aptamer‐ready interface for small‐molecule capture. Coupled to an extended‐gate FET, the hybrid converts subtle biochemical binding into a clear electrical signal for resilient cortisol sensing in aqueous media ...
Co Dang Pham +2 more
wiley +1 more source
Integration of Freestanding High‐k Oxide Membranes for 2D Ferroelectric Field‐Effect Transistors
Advanced Science, EarlyView.This work introduces a defect‐tolerant integration strategy that enables freestanding BaTiO3 membranes to form low‐leakage top‐gate junctions with MoS2. The resulting FeFETs exhibit a record 0.22 V nm−1 memory window, ultrahigh‐k response, and near‐ideal subthreshold swings.
Zejing Guo +16 more
wiley +1 more source
Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions
Applied Sciences, 2018 In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages.
Keyvan Narimani +4 more
doaj +1 more source
Scalable GaSb/InAs tunnel FETs with non-uniform body thickness
, 2016 GaSb/InAs heterojunction tunnel field-effect transistors are strong candidates in building future low-power integrated circuits, as they could provide both steep subthreshold swing and large ON-state current ($I_{\rm{ON}}$).
Huang, Jun Z. +4 more
core +1 more source
Advanced Science, EarlyView.Here, we propose a single‐crystal PZT‐based piezo‐phototronic organic adaptive memory transistor (OAMT), achieving a record memory window capacity factor (γ) of 0.87 at a low SS of 200 mV/decade via efficient multi‐field control. The device achieves a high recognition accuracy ∼ 90% in neuromorphic simulations, demonstrates robust fault tolerance under
Chenhao Xu +8 more
wiley +1 more source
Micromachines, 2019 The main challenge for tunnel field-effect transistors (TFETs) is achieving high on-current (Ion) and low subthreshold swing (SS) with reasonable ambipolar characteristics.
Garam Kim +3 more
doaj +1 more source
Fluorinated InGaZnO Thin-Film Transistor With HfLaO Gate Dielectric [PDF]
, 2014 published_or_final_versio
Lai, PT, QIAN, L
core +1 more source
Oxide Semiconductor Thin‐Film Transistors for Low‐Power Electronics
Advanced Science, EarlyView.This review explores the progress of oxide semiconductor thin‐film transistors in low‐power electronics. It illustrates the inherent material advantages of oxide semiconductor, which enable it to meet the low‐power requirements. It also discusses current strategies for reducing power consumption, including interface and structure engineering.
Shuhui Ren +8 more
wiley +1 more source
Nanomaterials, 2023 Transistor scaling has become increasingly difficult in the dynamic random access memory (DRAM). However, vertical devices will be good candidates for 4F2 DRAM cell transistors (F = pitch/2).
Zhuo Chen +14 more
doaj +1 more source
, 2018 In this letter, the transient behavior of a ferroelectric (FE) metal-oxide-semiconductor (MOS) capacitor is theoretically investigated with a series resistor.
Avci, Uygar E. +3 more
core +1 more source