Results 71 to 80 of about 13,751 (195)

Electrical characterization of top-gated molybdenum disulfide field-effect-transistors with high-k dielectrics [PDF]

, 2017
High quality HfO2 and Al2O3 substrates are fabricated in order to study their impact on top-gate MoS2 transistors. Compared with top-gate MoS2 FETs on a SiO2 substrate, the field effect mobility decreased for devices on HfO2 substrates but substantially ...
Azcatl, Angelica, Bolshakov, Pavel, Hurley, Paul K., Wallace, Robert M., Young, Chadwin D., Zhao, Peng   +5 more
core   +1 more source

Highly Sensitive Heterojunction‐Gated Phototransistor With Detection Wavelength Ranged From 350 to 1700 Nm

Advanced Science, EarlyView.
This work demonstrates a heterojunction‐gated infrared phototransistor for broadband detection from 350 to 1700 nm. By suppressing defect states on nonpolar (100) facets of large PbS quantum dots via hybrid ligand passivation, the device achieves a room‐temperature detectivity of 5.7 × 1013 Jones at 1650 nm.
Hongkun Duan, Wenyu Zhang, Tao Luo, XiaoLu Xia, Qianxi Yang, Ying Yan, Shengmei Gao, Xitian Yin, Yixiao Niu, Zhiyu Zhao, Jianbing Zhang, Haobin He, Jiang Tang, Ying Wang, Zhiyong Zhang   +14 more
wiley   +1 more source

High performance Tunnel Field Effect Transistors based on in-plane transition metal dichalcogenide heterojunctions

, 2018
In-plane heterojunction tunnel field effect transistors based on monolayer transition metal dichalcogenides are studied by means of self-consistent non-equilibrium Green's functions simulations and an atomistic tight-binding Hamiltonian.
Choukroun, Jean, Dollfus, Philippe, Fang, Shiang, Kaxiras, Efthimios, Pala, Marco   +4 more
core   +1 more source

Gate‐Dielectric Surface Engineering With Fluorinated Monolayers: Minimizing Contact Resistance and Nonidealities in OFETs

Advanced Electronic Materials, EarlyView.
Surface engineering of gate dielectrics with fluorinated self–assembled monolayers significantly improves the performance of organic field–effect transistors. In this study, Al2O3 functionalized with fluorinated phosphonic acids reduces contact resistance and hysteresis while achieving near‐zero threshold voltages, offering an alternative to ...
Shaghayegh Mesforush, Alba Cazorla, Hayley Melville, Philippe Blanchard, Hagen Klauk, Ute Zschieschang, Min Zhang, Lamiaa Fijahi, Marta Mas‐Torrent, Esther Barrena   +9 more
wiley   +1 more source

Subthreshold-swing physics of tunnel field-effect transistors

AIP Advances, 2014
Band-to-band tunnel field-effect-transistors (TFETs) are considered a possible replacement for the conventional metal-oxide-semiconductor field-effect transistors due to their ability to achieve subthreshold swing (SS) below 60 mV/decade.
Wei Cao, Deblina Sarkar, Yasin Khatami, Jiahao Kang, Kaustav Banerjee   +4 more
doaj   +1 more source

The Effect of Fin Structure in 5 nm FinFET Technology

Journal of Microelectronic Manufacturing, 2019
In 5 nm technology node, FinFET device performance is sensitive to the dimension of the device structure such as the fin profile. In this work, we simulate the influence of fin height and fin width to an n-type FinFET. We have found that an optimized fin
Enming Shang, Yu Ding, Wenqiao Chen, Shaojian Hu, Shoumian Chen   +4 more
doaj   +1 more source

MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on Glass

IEEE Journal of the Electron Devices Society, 2021
We demonstrate the first wide bandgap oxide based negative capacitance transparent thin-film transistor (NC-TTFT) built on glass. The Mg0.03Zn0.97O (MZO) semiconductor served as the channel layer and ferroelectric Ni0.02Mg0.15Zn0.83O (NMZO) serves in the
Fangzhou Yu, Wen-Chiang Hong, Guangyuan Li, Yuxuan Li, Ming Lu, Yicheng Lu   +5 more
doaj   +1 more source

Modeling and Simulation of Negative Capacitance MOSFETs [PDF]

, 2018
The current and voltage characteristics of a MOSFET device are maily characterized by the source to channel barrier which is controlled by the gate voltage.
Nayak, Kaushik, Pushkar, Dasika
core  

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Journal of Applied Physics
In this paper, the p-GaN gate AlGaN/GaN high electron mobility transistors (HEMTs) with varying combinations of gate metal work function and gate geometry are fabricated and investigate the influence of gate leakage current (IGS) on the threshold voltage
Kai Liu, Chong Wang, Kuo Zhang, Xiao-hua Ma, Junchun Bai, Xuefeng Zheng, Ang Li, Yue Hao   +7 more
semanticscholar   +1 more source

A DC Compact Model of an Organic Electrochemical Transistor Based on a Semiconductor Physics and Thermodynamic Approach

Advanced Electronic Materials, EarlyView.
This work presents a physics‐based DC compact model of an Organic Electrochemical Transistor (OECT) that takes into account the faradaic redox reaction in the above threshold regime and incorporates the diffusive current of the subthreshold regime based on semiconductor physics.
Ermias Telahun Teka, Yeohoon Yoon, Laura Teuerle, Tommy Meier, Hans Kleemann, Ghader Darbandy, Benjamin Iniguez   +6 more
wiley   +1 more source