Results 81 to 90 of about 13,751 (195)

Toward Reliable Metal Halide Perovskite FETs: From Electronic Structure and Device Physics to Stability and Performance Engineering

Advanced Electronic Materials, EarlyView.
Metal halide perovskite field‐effect transistors (PeFETs) offer great promise for flexible, low‐cost, and high‐performance due to their excellent charge carrier properties. However, challenges like ion migration, hysteresis, and instability limit their performance.
Georgios Chatzigiannakis, Anastasia Soultati, Leonidas C. Palilis, Ermioni Polydorou, Konstantinos Davazoglou, Petros‐Panagis Filippatos, Goutham Raj Perumallapelli, Ravindra Naik Bukke, Abd. Rashid bin Mohd Yusoff, Ilhwan Ryu, Peng Gao, Alexander Chroneos, Mohammad Khaja Nazeeruddin, Maria Vasilopoulou   +13 more
wiley   +1 more source

High‐Performance and Energy‐Efficient Sub‐5 nm 2D Double‐Gate MOSFETs Based on Silicon Arsenide Monolayers

Advanced Electronic Materials, EarlyView.
Sub‐5 nm double‐gate MOSFETs based on 2D SiAs monolayers are investigated using quantum transport simulations. By engineering source‐drain underlap regions, the devices achieve exceptional on‐currents of up to 1206 µA µm−1, surpassing the ITRS 2028 high‐performance targets.
Dogukan Hazar Ozbey, Engin Durgun
wiley   +1 more source

Physical Mechanisms of Reverse DIBL and NDR in FeFETs With Steep Subthreshold Swing

IEEE Journal of the Electron Devices Society, 2020
We have investigated transient Id - Vg and Id - Vd characteristics of ferroelectric field-effect transistor (FeFET) by simulation with ferroelectric model considering polarization switching dynamics.
Chengji Jin, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi   +3 more
doaj   +1 more source

Precise Tailoring of Charge Transport Characteristics in Zr and Hf Doped Indium Tin Oxide Thin Film Transistors

Advanced Electronic Materials, EarlyView.
Zirconium, hafnium, and mixed zirconium/hafnium doped indium tin oxide thin films are accessible by atomic layer deposition. The amorphous functional films are about 8 nm thick and show a high interdiffusion of all elements. Their transistor characteristics can be modulated depending on the amount of Zr and Hf oxide phases incorporated in these thin ...
Marie Isabelle Büschges, Christian Dietz, Vanessa Trouillet, Ann‐Christin Dippel, Fernando Igoa Saldaña, Jörg J. Schneider   +5 more
wiley   +1 more source

Computational design of two‐dimensional MA2Z4 family field‐effect transistor for future Ångström‐scale CMOS technology nodes

InfoMat, EarlyView.
Two‐dimensional MA2Z4 such as MoSi2N4 offer a new path to extend transistor scaling beyond the limits of silicon. Due to their exceptional properties, these 2D semiconductors are promising candidates for future Ångström‐scale CMOS technology. This review outlines the computational design and roadmap bridging materials discovery, device design and ...
Che Chen Tho, Zongmeng Yang, Shibo Fang, Shiying Guo, Liemao Cao, Chit Siong Lau, Fei Liu, Shengli Zhang, Jing Lu, L. K. Ang, Lain‐Jong Li, Yee Sin Ang   +11 more
wiley   +1 more source

Fabrication and Characterization of a Novel Si Line Tunneling TFET With High Drive Current

IEEE Journal of the Electron Devices Society, 2020
In this paper, an N-type silicon line tunneling TFET (LT-TFET) with an ultra-shallow N+ pocket was proposed. The pocket was formed by using the germanium preamorphization implantation (Ge PAI), arsenic ultra-low energy implantation and spike annealing ...
Weijun Cheng, Renrong Liang, Gaobo Xu, Guofang Yu, Shuqin Zhang, Huaxiang Yin, Chao Zhao, Tian-Ling Ren, Jun Xu   +8 more
doaj   +1 more source

Quantum Transport Simulation of III-V TFETs with Reduced-Order K.P Method

, 2015
III-V tunneling field-effect transistors (TFETs) offer great potentials in future low-power electronics application due to their steep subthreshold slope and large "on" current.
Huang, Jun Z., Klimeck, Gerhard, Long, Pengyu, Povolotskyi, Michael, Zhang, Lining   +4 more
core   +1 more source

High‐mobility suspended MoS2 devices with tunable threshold voltage

InfoMat, EarlyView.
Due to their atomic‐scale thickness, two‐dimensional materials (2DMs) are highly sensitive to their environment, including the substrate. By fabricating various suspended molybdenum disulfide devices, this study demonstrates that the suspended structure can shield the influence of the substrate on the properties of 2DMs, thereby enabling better ...
Jiahao Yan, Xu Han, Dongke Rong, Zhaoxu Chen, Xinyue Li, Yehua Yang, Yingbei Huang, Tongtong Xue, Jiakai Wang, Zihao Guo, Shiqi Yang, JingHan Zhao, Yunyun Dai, Yang Chai, Jian‐gang Guo, Xia Liu, Yuan Huang, Yeliang Wang   +17 more
wiley   +1 more source

Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−x Zr x O2

Nanoscale Research Letters, 2019
Germanium (Ge) negative capacitance field-effect transistors (NCFETs) with various Zr compositions in Hf1−x Zr x O2 (x = 0.33, 0.48, and 0.67) are fabricated and characterized. For each Zr composition, the NCFET exhibits the sudden drop in some points of
Yue Peng, Yan Liu, Genquan Han, Jincheng Zhang, Yue Hao   +4 more
doaj   +1 more source

High-Mobility Pentacene-Based Thin-Film Transistors With a Solution-Processed Barium Titanate Insulator [PDF]

, 2011
—Pentacene-based organic thin-film transistors (OTFTs) with solution-processed barium titanate (Ba1.2Ti0.8O3) as a gate insulator are demonstrated. The electrical properties of pentacene-based TFTs show a high field-effect mobility of 8.85 cm2 · V−1 ...
Adriyanto, Feri, Huang, Wen-Chieh, Hung, Yu-Ming, Kuo, Shu-Hao, Wang, Yeong-Her, Wei, Chia-Yu   +5 more
core