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Hydrogen-bond bridging dually facilitates exciton dissociation and charge migration for enhanced photocatalytic water oxidation. [PDF]
Natl Sci RevJing J, Tan X, Xu J, Li W, Su Y, Zhu Y.
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Near-field surface photovoltage
Applied Physics Letters, 2000A phenomenon called near-field surface photovoltage is presented. It is based on inducing photovoltage only at a semiconductor space-charge region using near-field illumination. The photovoltage is obtained by measuring the contact potential difference between an optical near-field force sensor and a semiconductor surface under illumination.
R. Shikler, Y. Rosenwaks
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Surface photovoltage in CdMnTe
Solid-State Electronics, 1992Abstract Surface photovoltage method for determining minority carriers diffusion length has been applied to CdMnTe. It has been found that the method can yield reliable data for this parameter in CdMnTe but only under several conditions which have to be fulfilled during measurement. The main condition is to prepare the sample thick enough to obtain a
E. Płaczek-Popko, L. Szaro
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Physica Status Solidi (a), 1977
Surface photovoltage is measured as function of barrier height. The height of the barrier is varied by illumination and electric field in a wide range. From a comparison of theoretical and experimental results the concentration of surface states and their capture cross-sections for electrons and holes are determined.
I. Gabaš, J. Toušek
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Surface photovoltage is measured as function of barrier height. The height of the barrier is varied by illumination and electric field in a wide range. From a comparison of theoretical and experimental results the concentration of surface states and their capture cross-sections for electrons and holes are determined.
I. Gabaš, J. Toušek
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Microscopic surface photovoltage spectroscopy
Applied Physics Letters, 2002We present a microscopic surface photovoltage spectroscopy method. It is based on a tunable illumination system combined with a kelvin probe force microscope, which measures the contact potential difference between a sample surface and a tip of an atomic force microscope.
S. Saraf +3 more
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Surface photovoltage spectroscopy on semiconductor surfaces
Il Nuovo Cimento B Series 11, 1977Surface photovoltage (SPV) spectroscopy is discussed with respect to its application for the investigation of semiconductor surfaces. Principles of the method and the experimental equipment are presented. As examples for the study of surface states, recent experimental results on ultrahigh-vacuum (UHV) cleaved surfaces of Ge, Si, GaAs and ZnO are ...
H. Lüth, G. Heiland
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Surface photovoltage spectroscopy ‐ method and applications
physica status solidi c, 2010AbstractSurface photovoltage spectroscopy (SPS) allows for obtaining a detailed picture of the electronic structure of semiconductors. In SPS, changes in band bending at the free semiconductor surface are monitored as a function of external illumination. Surface photovoltage spectroscopy can provide detailed, quantitative information on bulk properties
CAVALCOLI, DANIELA, CAVALLINI, ANNA
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Surface photovoltage measurements in liquids
Review of Scientific Instruments, 1999We present a simple, compact, and robust arrangement for surface photovoltage measurements of free semiconductor surfaces immersed in liquids. It is based on the classical Kelvin probe arrangement, where the semiconductor sample is put in a liquid-containing, electrically insulating vessel, with an optically transparent window, situated between the ...
S. Bastide +3 more
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Electron Beam Enhanced Surface Photovoltage
Japanese Journal of Applied Physics, 1982A SiO2-covered p-type Si wafer 76 mm in diameter was irradiated by a focused electron beam of 30 keV. The resistivity of the wafer was 1 mΩm, and the SiO2 layer formed by the wet oxidation process was 360 nm thick. Four electron dosages were used: 2×10-7, 5×10-7, 1×10-6 and 5×10-6 C/cm2.
Chusuke Munakata +2 more
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Limitations of surface photovoltage measurements
Journal of Applied Physics, 1984Surface photovoltage measurement used to measure the diffusion length of minority carriers in solar cells does not yield the correct value even when the cell thickness is much greater than the diffusion length. Under the best conditions the measured diffusion length is at least 10% lower than the actual value.
Amal K. Ghosh +2 more
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