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Surface photovoltage in quantum well structures

Journal of Applied Physics, 2002
A theoretical expression for surface photovoltage VSPV in semiconductor structures with a single or series of quantum wells in the space charge region is derived. The cases of both linear and quadratic recombination in the quantum wells are considered.
H. Ruda, A. Shik
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Surface photovoltage experiments on SrTiO3 electrodes

Journal of Vacuum Science and Technology, 1978
Electronic surface states play a significant role in charge transfer between the electrolyte and the n-type SrTiO2 semiconducting electrodes used in the photoelectrolysis of water. To clarify the role of these states, we have measured the wavelength response of the photovoltage developed between the SrTiO3 surface and a vibrating Au reference electrode,
J. G. Mavroides, D. F. Kolesar
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Spatially-Resolved Surface Photovoltage Measurement

2006
LM-STS was proposed as an easily accessible and very powerful method for investigating SR-SPV under various experimental conditions. Unlike previous methods, it can obtain not only the SR-SPV spectrum but also the entire illuminated/dark IV characteristics with a constant tip-sample distance, without the need for specially-designed STM electronics. The
O. Takeuchi, H. Shigekawa
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Surface photovoltage behavior of GaN columns

physica status solidi (a), 2015
GaN columns are grown by metal organic vapor phase epitaxy (MOVPE) with a high silane flow, which often leads to rough sidewalls and related problems during a subsequent shell overgrowth by e.g., InGaN/GaN quantum wells. In order to get more information on the surface of GaN columns before overgrowth, surface photovoltage (SPV) measurements have been ...
Manal Ali Deeb   +4 more
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A generalized approach to surface photovoltage

Journal of Applied Physics, 1996
A detailed majority and minority carrier current balance model for surface photovoltage (SPV) is presented. A rigorous treatment of carrier junction generation and surface recombination is shown to be essential. We show that under weak above band gap photoexcitation, standard constant open-circuit voltage and constant photon flux SPV measurements can ...
Q. Liu   +3 more
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Distinction between surface and bulk states in surface-photovoltage spectroscopy

Physical Review B, 1994
The effect of localized electron states on the photovoltage at a free semiconductor surface is analyzed. The analysis shows that surface-photovoltage spectroscopy (SPS) is inherently more sensitive to surface states than to bulk states. Moreover, a fundamental difference between the effect of surface and bulk states on the surface photovoltage (SPV) is
, Leibovitch   +3 more
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Application of Surface Photovoltage Spectroscopy in Surface Analysis

MRS Proceedings, 1992
ABSTRACTExtension of the Kelvin probe vibrating capacitor technique of measuring work function, via Illumination of the semiconductor surface, i.e., Surface Photovoltage Spectroscopy (SPS), has many potential applications in the field of surface analysis.The combination of broad-band (white) and monochromatic radiation, together with measurement of the
Iain D. Baikie   +2 more
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Surface photovoltage measurement in MOS structures

Applied Physics A Solids and Surfaces, 1987
A method for the dc surface photovoltage measurement in MOS capacitors is proposed. Results of surface-photovoltage measurements performed for two kinds of MOS structures on p-type silicon substrates are presented. Comparison of them with results obtained form C-V characteristics exhibits a satisfactory conformity.
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Measurement of fast surface photovoltage relaxation

Review of Scientific Instruments, 1996
A new version of the measuring circuit is presented which makes it possible to measure fast surface photovoltage relaxation in a simple way. An explanation of the experimental arrangement is given as well as illustrating the results.
J. Hlávka, R. S̆vehla
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Phonons in surface photovoltage of GaAs

Physics Letters A, 1974
Abstract Oscillatory surface photovoltage is reported in GaAs at 4.2°K, characterized by two series of minima. Dominating series is attributed to the capture of photoexcited electrons by surface states with emission of phonons. Second, weak series coincides with oscillations in photoconductivity.
A. Morawski, J. Łagowski
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