Results 71 to 80 of about 300,081 (358)

Control and performance of a zero-current-switched three-phase inverter equipped with resonant circuits on the AC-side [PDF]

open access: yes, 1996
This paper presents a zero-current-switched voltage-fed inverter equipped with resonant circuits on the AC side. The current flowing through a switching device, i.e., an IGBT is a sum of the load current and the resonant current.
Akagi, Hirofumi   +2 more
core   +1 more source

Technical Reviews of Power Loss Optimization in High-Frequency PSiPs—In Relation to Power Switches and Power Inductors [PDF]

open access: gold, 2023
Yinyu Wang   +6 more
openalex   +1 more source

Emerging role of ARHGAP29 in melanoma cell phenotype switching

open access: yesMolecular Oncology, EarlyView.
This study gives first insights into the role of ARHGAP29 in malignant melanoma. ARHGAP29 was revealed to be connected to tumor cell plasticity, promoting a mesenchymal‐like, invasive phenotype and driving tumor progression. Further, it modulates cell spreading by influencing RhoA/ROCK signaling and affects SMAD2 activity. Rho GTPase‐activating protein
Beatrice Charlotte Tröster   +3 more
wiley   +1 more source

CDK11 inhibition induces cytoplasmic p21WAF1 splice variant by p53 stabilisation and SF3B1 inactivation

open access: yesMolecular Oncology, EarlyView.
CDK11 inhibition stabilises the tumour suppressor p53 and triggers the production of an alternative p21WAF1 splice variant p21L, through the inactivation of the spliceosomal protein SF3B1. Unlike the canonical p21WAF1 protein, p21L is localised in the cytoplasm and has reduced cell cycle‐blocking activity.
Radovan Krejcir   +12 more
wiley   +1 more source

A New Fully Soft‐Switching High Step‐Up Interleaved Converter for Optimal Efficiency

open access: yesIET Power Electronics
A novel fully soft‐switching interleaved high step‐up converter is introduced in this paper. The suggested converter achieves high voltage gain using coupled inductors (CI) and a voltage multiplier cell (VMC).
Arsalan Erfani   +2 more
doaj   +1 more source

Power Semiconductor Losses Simulation Capabilities in Matlab/Simulink

open access: yesActa Electrotechnica et Informatica, 2023
The paper describes methods of simulation conduction and switching losses of power semiconductors in MATLAB/Simulink. The comparison of simulation results for Infineon’s semiconductor with PLECS Standalone simulation is presented.
Gordan Daniel, Pástor Marek
doaj   +1 more source

Analysis of Switching-Loss-Reduction Methods for MHz-Switching Buck Converters [PDF]

open access: yes2007 IEEE Conference on Electron Devices and Solid-State Circuits, 2007
Numbers of switching-loss-reduction methods recently proposed for MHz-switching buck converters are thoroughly investigated. From a theoretical perspective, switching loss is found to be effectively minimized by adapting the width rather than the turn-on voltage of power transistors of a buck converter.
Tsz Yin Man   +2 more
openaire   +1 more source

Nonlinear switching and solitons in PT-symmetric photonic systems

open access: yes, 2015
One of the challenges of the modern photonics is to develop all-optical devices enabling increased speed and energy efficiency for transmitting and processing information on an optical chip.
Akhmediev N.   +6 more
core   +1 more source

Intein‐based modular chimeric antigen receptor platform for specific CD19/CD20 co‐targeting

open access: yesMolecular Oncology, EarlyView.
CARtein is a modular CAR platform that uses split inteins to splice antigen‐recognition modules onto a universal signaling backbone, enabling precise, scarless assembly without re‐engineering signaling domains. Deployed here against CD19 and CD20 in B‐cell malignancies, the design supports flexible multi‐antigen targeting to boost T‐cell activation and
Pablo Gonzalez‐Garcia   +9 more
wiley   +1 more source

Low-loss AlInN/GaN microwave switch

open access: yesElectronics Letters, 2011
A report is presented on the first low-loss monolithic microwave integrated circuit switch using AlInN/GaN heterostructure field effect transistors. Owing to significantly lower sheet resistance compared to the conventional AlGaN/GaN heterostructure (215 against 280 Q/□), and lower contact resistance (0.27 against 0.5 Ω×mm), the microwave switch based ...
A. Sattu   +6 more
openaire   +1 more source

Home - About - Disclaimer - Privacy