Results 231 to 240 of about 187,009 (324)

Printed Optoelectronic Memories Using Gr/WS2 Nanostructured Composite Ink for Retina‐Inspired Vision Persistent Synapses

open access: yesAdvanced Electronic Materials, EarlyView.
An optoelectronic memory device based on graphene (Gr)/WS2 nanoparticle composite ink printing is proposed, achieving a multilevel storage capacity. The storage current can be dynamically modulated through optoelectronic synergy, effectively mimicking human visual perception and recognition.
Jiahui Bai   +6 more
wiley   +1 more source

Amorphous Gallium‐Oxide‐Based Non‐Filamentary Memristive Device with Highly Repeatable Multiple Resistance States

open access: yesAdvanced Electronic Materials, EarlyView.
A fully back‐end‐of‐line (BEOL) compatible memristive device is proposed using an amorphous gallium oxide (a‐GaOx) film grown by plasma‐enhanced atomic layer deposition. Bipolar resistive analog switching is achieved without requiring forming and with a self‐rectifying behavior.
Onur Toprak   +6 more
wiley   +1 more source

Structural plasticity of pyramidal cell neurons measured after FLASH and conventional dose-rate irradiation. [PDF]

open access: yesBrain Struct Funct
Dickstein DL   +8 more
europepmc   +1 more source

Harnessing Earth‐Abundant Lead‐Free Halide Perovskite for Resistive Switching Memory and Neuromorphic Computing

open access: yesAdvanced Electronic Materials, EarlyView.
In this study, a novel 1D lead‐free metal halide, K2CuBr3, composed of earth‐abundant elements, is introduced for resistive switching and artificial synapse devices. With exceptionally low production costs and minimal environmental impact, K2CuBr3 can be a promising candidate for sustainable memory storage and neuromorphic computing.
Zijian Feng   +14 more
wiley   +1 more source

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