Results 231 to 240 of about 352,422 (329)

Memory Manufacture Under Microgravity (MMuM): In‐Space Manufactured ZnO‐Based Resistive Random Access Memory for Emerging Computing Application

open access: yesAdvanced Electronic Materials, EarlyView.
This paper presented ZnO‐based crossbar RRAMs by electrohydrodynamic (EHD) printing technology under in‐space manufacture environment as microgravity (µG). The crossbar structures of Ag/ZnO/Ag are fabricated under earth with in‐space microgravity. With the microgravity effect, a significant electroforming forming voltage reduced 89.3% as a storage ...
Yujian Huang   +8 more
wiley   +1 more source

Topological Skyrmion‐Based Spin‐Torque‐Diode Effect in Magnetic Tunnel Junctions

open access: yesAdvanced Electronic Materials, EarlyView.
Electrical excitation and detection of a breathing skyrmion in a nanoscale skyrmion‐based spin‐torque diode at room temperature is achieved. Skyrmions are generated via spin‐transfer torque current induction, and their breathing dynamics are observed through ferromagnetic resonance (FMR) measurements.
Shuhui Liu   +13 more
wiley   +1 more source

Quantized Conductance and Multilevel Memory Operation in Mn3O4 Nanowire Network Devices Combined with Low Voltage Operation and Oxygen Vacancy Induced Resistive Switching

open access: yesAdvanced Electronic Materials, EarlyView.
Quantum conductance via Mn3O4 nanowire network based memristive devices are established. Extremely consistent resistive switching with low operating voltage is established. High temperature stability and longevity is shown by such nanowire network‐based devices is an attractive option for device applications.
Keval Hadiyal   +2 more
wiley   +1 more source

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