Results 91 to 100 of about 24,214 (199)
IEEE Journal of the Electron Devices Society, 2018 Power consumption and Ion/Ioff ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations.
Carlos Couso +3 more
doaj +1 more source
Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade
, 2013 In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost ...
Bagolini, A. +9 more
core +1 more source
Design and TCAD Simulation of p+–n+ InAs‐Based TFET
Nano Select, Volume 7, Issue 3, March 2026.A physics‐based design and optimization of a p+−n+${{p}^ + } - {{n}^ + }$ InAs tunnel field‐effect transistor is presented using calibrated quantum‐corrected TCAD simulations. By employing a composite figure of merit that unifies digital and RF metrics, the proposed homojunction architecture achieves steep subthreshold swing, enhanced cutoff frequency,
Muhammad Elgamal +5 more
wiley +1 more source
InGaAs Capacitor-Less DRAM Cells TCAD Demonstration
IEEE Journal of the Electron Devices Society, 2018 2D numerical TCAD simulations are used to infer the behavior of III-V capacitor-less dynamic RAM (DRAM) cells. In particular, indium gallium arsenide on insulator technology is selected to verify the viability of III-V meta-stable-dip RAM cells. The cell
Carlos Navarro +7 more
doaj +1 more source
Carrier Mapping in Sub‐2nm Node Nanosheet Transistors with Scanning Spreading Resistance Microscopy
Small Methods, Volume 10, Issue 5, 9 March 2026.Within this work, advancements in scanning spreading resistance microscopy (SSRM) allow charge carrier mapping within 5.5 nm‐thick nanosheet channels. Devices subjected to rapid thermal annealing at 950°C show ∼ 5 nm enhanced phosphorus diffusion, with profiles in close agreement with semi‐atomistic process simulations.
Andrea Pondini +7 more
wiley +1 more source
NanomaterialsThis paper presents a method for modeling ReRAM in TCAD and validating its accuracy for neuromorphic systems. The data obtained from TCAD are used to analyze the accuracy of the neuromorphic system.
Seonggyeom Kim, Jonghwan Lee
doaj +1 more source
Description of radiation damage in diamond sensors using an effective defect model
, 2017 The BCML system is a beam monitoring device in the CMS experiment at the LHC. As detectors poly-crystalline diamond sensors are used. Here high particle rates occur from the colliding beams scattering particles outside the beam pipe.
Dabrowski, Anne +3 more
core +1 more source
A Reinforcement-Learning Based Approach for Designing High-Voltage SiC MOSFET Guard Rings
IEEE Open Journal of Power ElectronicsFor high-power silicon carbide (SiC) devices, breakdown voltage analysis is an important parameter, especially for guard ring design. This work explores the implementation of machine learning on SiC guard ring parameters such as ion implanted dose and ...
Tejender Singh Rawat +10 more
doaj +1 more source
BioScript: programming safe chemistry on laboratories-on-a-chip [PDF]
, 2018 This paper introduces BioScript, a domain-specific language (DSL) for programmable biochemistry which executes on emerging microfluidic platforms. The goal of this research is to provide a simple, intuitive, and type-safe DSL that is accessible to life ...
Brisk, Philip +4 more
core
Modeling and simulation of bulk gallium nitride power semiconductor devices
AIP Advances, 2016 Bulk gallium nitride (GaN) power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD) simulation to accurately model and optimize these devices.
G. Sabui +3 more
doaj +1 more source