Results 91 to 100 of about 24,114 (195)

Ferroelectric HZO Thin Films for FEFETs: Crystal Structure‐Device Performance Relationship

Advanced Electronic Materials, Volume 12, Issue 1, 7 January 2026.
Crystal Structure of HZO Thin Films Methods of Thin Film Deposition 1T‐FeFET Design Influence on Ferroelectric Properties FeFET Applications Recent Advances and Challenges ORTHORHOMBIC HEARTBEAT. Abstract The rapid development of hafnium zirconium oxide (HZO) thin films has established ferroelectric field‐effect transistors (FeFETs) as strong ...
Harsha Ragini Aturi, Ramana Murthy Gajula, Deepshikha Rathore   +2 more
wiley   +1 more source

Performance and Power Consumption Trade-Off in UTBB FDSOI Inverters Operated at NTV for IoT Applications

IEEE Journal of the Electron Devices Society, 2018
Power consumption and Ion/Ioff ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations.
Carlos Couso, Javier Martin-Martinez, Marc Porti, Montserrat Nafria   +3 more
doaj   +1 more source

Description of radiation damage in diamond sensors using an effective defect model

, 2017
The BCML system is a beam monitoring device in the CMS experiment at the LHC. As detectors poly-crystalline diamond sensors are used. Here high particle rates occur from the colliding beams scattering particles outside the beam pipe.
Dabrowski, Anne, de Boer, Wim, Guthoff, Moritz, Kassel, Florian   +3 more
core   +1 more source

Kolmogorov–Arnold Network for Transistor Compact Modeling

Advanced Intelligent Systems, Volume 8, Issue 1, January 2026.
This work introduces Kolmogorov–Arnold network (KAN) for the transistor—an architecture that integrates interpretability with high precision in physics‐based function modeling. The results reveal that despite achieving superior prediction accuracy for critical figures of merit, KAN demonstrates unique inherent challenges for transistor modeling ...
Rodion Novkin, Hussam Amrouch
wiley   +1 more source

InGaAs Capacitor-Less DRAM Cells TCAD Demonstration

IEEE Journal of the Electron Devices Society, 2018
2D numerical TCAD simulations are used to infer the behavior of III-V capacitor-less dynamic RAM (DRAM) cells. In particular, indium gallium arsenide on insulator technology is selected to verify the viability of III-V meta-stable-dip RAM cells. The cell
Carlos Navarro, Santiago Navarro, Carlos Marquez, Luca Donetti, Carlos Sampedro, Siegfried Karg, H. Riel, Francisco Gamiz   +7 more
doaj   +1 more source

BioScript: programming safe chemistry on laboratories-on-a-chip [PDF]

, 2018
This paper introduces BioScript, a domain-specific language (DSL) for programmable biochemistry which executes on emerging microfluidic platforms. The goal of this research is to provide a simple, intuitive, and type-safe DSL that is accessible to life ...
Brisk, Philip, Curtis, Chris, Lesani, Mohsen, Loveless, Tyson, Ott, Jason   +4 more
core  

Processing and characterization of epitaxial GaAs radiation detectors

, 2015
GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 $\mu\textrm{m}$ - 130 $\mu\textrm{m ...
Arsenovich, T., Gädda, A., Härkönen, J., Junkes, A., Karadzhinova, A., Kostamo, P., Lipsanen, H., Luukka, P., Mattila, M., Nenonen, S., Peltola, T., Riekkinen, T., Tuominen, E., Winkler, A., Wu, X.   +14 more
core   +1 more source

A Reinforcement-Learning Based Approach for Designing High-Voltage SiC MOSFET Guard Rings

IEEE Open Journal of Power Electronics
For high-power silicon carbide (SiC) devices, breakdown voltage analysis is an important parameter, especially for guard ring design. This work explores the implementation of machine learning on SiC guard ring parameters such as ion implanted dose and ...
Tejender Singh Rawat, Chia-Lung Hung, Yi-Kai Hsiao, Wei-Chen Yu, Surya Elangovan, Wei-Ting Lin, Yi-Rong Lin, Kai-Lin Yang, Nien-Yi Jan, Yung-Hui Li, Hao-Chung Kuo   +10 more
doaj   +1 more source

Modeling and simulation of bulk gallium nitride power semiconductor devices

AIP Advances, 2016
Bulk gallium nitride (GaN) power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD) simulation to accurately model and optimize these devices.
G. Sabui, P. J. Parbrook, M. Arredondo-Arechavala, Z. J. Shen   +3 more
doaj   +1 more source

Dynamics of Charge Transients in High Voltage Silicon and SiC NPN BJT Under High Injection Levels

IEEE Open Journal of Power Electronics
This article evaluates the dynamic performance of high voltage Silicon and 4H-SiC NPN BJTs based on experimental measurements together with modeling through Silvaco TCAD to describe the charge transient dynamics.
Mana Hosseinzadehlish, Saeed Jahdi, Konstantinos Floros, Ingo Ludtke, Xibo Yuan   +4 more
doaj   +1 more source