Results 121 to 130 of about 24,114 (195)

Impact of drain and source engineering on dual metal InAs-GaSb VTFETs with high-K gate stack design. [PDF]

Sci Rep
Saravanan M, Parthasarathy E, Rahi SB, Natarajan R.   +3 more
europepmc   +1 more source

Enabling scalable ferroelectric-based future generation vertical NAND flash with bonding-friendly architecture: strategies for erase and disturb optimization. [PDF]

Nanoscale Adv
Song I, Kim J, Lee S, Myeong I.
europepmc   +1 more source

Advances in High-Voltage Power Electronics Using Ga₂O₃-Based HEMT: Modeling. [PDF]

Materials (Basel)
Alhasani R, Hussain H, Alkhamisah MA, Hiazaa A, Alharbi A.   +4 more
europepmc   +1 more source

Demonstration of accurate ID-VG characteristics modeling in SiC mosfets using separated artificial neural networks with small training dataset. [PDF]

Sci Rep
Chankla M, Chen BR, Singh SK, Chauhan YS, Lee WJ, Chen NY, Kanjanachuchai S, Wu TL.   +7 more
europepmc   +1 more source

TCAD radiation damage model

, 2020
Passeri, D, Morozzi, A
openaire   +1 more source

Ultra-thin (<2 µm) silicon carbide free-standing membranes as beam position monitors for soft and tender X-ray beamlines. [PDF]

J Synchrotron Radiat
Medina E, Trovato G, Calcagno L, Kalbfleisch S, Birri M, Milluzzo G, Romano F, Sangregorio E, Moscato S, Milian FM, Giordanengo S, Vignati A, Camarda M.   +12 more
europepmc   +1 more source

Diffusion mechanism as cause of optical degradation in AlGaN-based UV-C leds investigated by TCAD simulations. [PDF]

Sci Rep
Roccato N, Piva F, Buffolo M, De Santi C, Trivellin N, Susilo N, Vidal DH, Muhin A, Sulmoni L, Wernicke T, Kneissl M, Meneghesso G, Zanoni E, Meneghini M.   +13 more
europepmc   +1 more source

Electrical Characterization and Simulation of GaN-on-Si Pseudo-Vertical MOSFETs with Frequency-Dependent Gate C-V Investigation. [PDF]

Micromachines (Basel)
Ackermann V, El Amrani M, Mohamad B, Ben Abbes R, Charles M, Cavalaglio S, Manrique M, Buckley J, Salem B.   +8 more
europepmc   +1 more source

Design and Optimization of AlGaN/AlN/GaN L‑SBD for Radiofrequency Applications. [PDF]

ACS Omega
Dudekula S, Jaiswal NK, Ebel T, Chowdam VP, Koo SM, Dhanaraj K.   +5 more
europepmc   +1 more source

Defect-Mediated Threshold Voltage Tuning in β-Ga₂O₃ MOSFETs via Fluorine Plasma Treatment. [PDF]

Nanomaterials (Basel)
Wang L, Zhang Y, Dong J, Wang J, Wang Z, Feng Y, Wang X, Shen S, Zhu H.   +8 more
europepmc   +1 more source