A Stepped-Spacer FinFET Design for Enhanced Device Performance in FPGA Applications. [PDF]
Zareiee M, Mehrad M, Tawfik A.
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The Effects of High-Energy Carbon Co-Doping on IMB-CNM LGAD Fabrication and Performance. [PDF]
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A Novel ELISA System for Measuring Modified LDL-Adiponectin Complex. [PDF]
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Universal Logic-in-Memory Gates Using Reconfigurable Silicon Transistors. [PDF]
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Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET. [PDF]
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The Study of the Transient Dose Rate Effect on ROIC Pixels in Ultra-Large-Scale Infrared Detectors. [PDF]
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Using TCAD tools, many reliability issues can be studied quantitatively. Examples are hot carrier degradation of interfaces, threshold voltage shifts during NBTI stress, radiation effects and soft errors, ESD and latch-up, thermo-mechanical issues, electro-migration and stress-voiding.
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