Results 171 to 180 of about 24,114 (195)
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TCAD simulation of photodetector spectral response
Proceedings IEEE/WIC International Conference on Web Intelligence (WI 2003), 2004In this paper, the spectral responsivity of a photodetector is determined by extracting optical parameters (refractive index and extinction coefficients) from the reflectivity measurement data and by treating the surface recombination velocity as a free parameter.
B. Jacob +4 more
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1998
The equipment for the fabrication of semiconductor devices has become sophisticated and thus, the field of competition of the technologies considered up to now has changed. The author analyzes the causes of the changes in the competition fields and a solution is proposed from the view point of the TCAD technology.
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The equipment for the fabrication of semiconductor devices has become sophisticated and thus, the field of competition of the technologies considered up to now has changed. The author analyzes the causes of the changes in the competition fields and a solution is proposed from the view point of the TCAD technology.
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2018
The EPFL substrate lumped device models have been coded in VerilogA and validated by comparison with TCAD simulations. The choice of VerilogA implementation allows to simulate the model in standard circuit simulators as the Cadence Spectre used in this chapter. The Synopsys Sentaurus Device simulator will be used as TCAD software for comparison.
Pietro Buccella +3 more
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The EPFL substrate lumped device models have been coded in VerilogA and validated by comparison with TCAD simulations. The choice of VerilogA implementation allows to simulate the model in standard circuit simulators as the Cadence Spectre used in this chapter. The Synopsys Sentaurus Device simulator will be used as TCAD software for comparison.
Pietro Buccella +3 more
openaire +1 more source
TCAD simulation of thermally evaporated germanium
physica status solidi c, 2013AbstractEpitaxial growth of germanium on silicon produces large misfit and threading dislocation densities which dramatically affect electronic properties of Ge. For this reason, TCAD standard models and parameters, optimized for bulk Ge, fail when applied to Ge epilayers.
DE IACOVO, ANDREA +3 more
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1995
This paper gives an overview about our research on three-dimensional process simulation. Today’s activities are worldwide still suffering from a lack of appropriate geometric modeling, robust gridding, accurate and verifiable physical models as well as computationally efficient numerical algorithms.
E. Leitner +4 more
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This paper gives an overview about our research on three-dimensional process simulation. Today’s activities are worldwide still suffering from a lack of appropriate geometric modeling, robust gridding, accurate and verifiable physical models as well as computationally efficient numerical algorithms.
E. Leitner +4 more
openaire +1 more source
Trends, demands and challenges in TCAD
Materials Science and Engineering: B, 2005Currently, TCAD is most heavily used in the device research and process integration phases of a technology life cycle. However, a major trend visible in the industry is the demand to apply TCAD tools far beyond the integration phase into manufacturing and yield optimization.
Ingo Bork +3 more
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2007
Today much of the development of semiconductor devices and processes is done by TCAD as it offers unique possibilities in visualisation of processing steps, description of the physical changes and understanding of the interrelation of the process variables. Modelling of processes provides a way to interactively explore the fabrication process, studying
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Today much of the development of semiconductor devices and processes is done by TCAD as it offers unique possibilities in visualisation of processing steps, description of the physical changes and understanding of the interrelation of the process variables. Modelling of processes provides a way to interactively explore the fabrication process, studying
openaire +1 more source
Hierarchical TCAD device simulation of FinFETs
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015A framework for FinFET design studies is presented. Our physics-based modeling approach allows to accurately capture the effects of channel cross-section, orientation and strain as well as contact resistance - for the first time all in one tool.
M. Karner +4 more
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1998
The Semiconductor Research Corporation (SRC) is a consortium that manages IC manufacturing related research. The membership consists of IC manufacturing companies, their suppliers, and a number of affliated companies. Most of the research is conducted at US universities.
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The Semiconductor Research Corporation (SRC) is a consortium that manages IC manufacturing related research. The membership consists of IC manufacturing companies, their suppliers, and a number of affliated companies. Most of the research is conducted at US universities.
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Accuracy counts in modeling TCAD's future
IEEE Potentials, 2000We are on the path to meet the major challenges ahead for TCAD. The emerging computational grid will ultimately solve the challenge of limited computational power. The Modular TCAD Framework will solve the TCAD software challenge once more developers agree to cooperate.
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