Results 171 to 180 of about 24,214 (199)
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IEEE Microwave Magazine, 2012
The semiconductor industry faces two types of complexity. One is associated with generating and managing large amounts of data that define physical layouts. The other is associated with the nonlinear behaviors of semiconductor processes, devices, and circuits.
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The semiconductor industry faces two types of complexity. One is associated with generating and managing large amounts of data that define physical layouts. The other is associated with the nonlinear behaviors of semiconductor processes, devices, and circuits.
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IEE Colloquium on New Developments in Power Semiconductor Devices, 1996
Physical models of material properties for 4H-SiC TCAD have been presented and used to discuss modelling of a selection of Power Semiconductor Devices. Such TCAD techniques have been utilised to quantify the expected switching speed performance of SiC MESFETs.
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Physical models of material properties for 4H-SiC TCAD have been presented and used to discuss modelling of a selection of Power Semiconductor Devices. Such TCAD techniques have been utilised to quantify the expected switching speed performance of SiC MESFETs.
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MOSFET simulation - TCAD tools/packages
2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676), 2004Industry-standard TCAD software packages are widely used by semiconductor companies to optimise processes and devices in integrated circuits fabrication. After process and device simulation one can go ahead with circuit simulation using Spice. This paper focuses on the matching of these program packages in the area of parameter and characteristics ...
I. Campian +5 more
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2017
Digital device are playing a crucial role in everyone’s life, hence, they are seeking for compact and high-performance devices which can be handled easily. For this researchers made drastic changes to the technology by scaling down the device for lesser area and high performance, but beyond some limit the CMOS device turned in opposite by showing short-
Sreenivasa Rao Ijjada +2 more
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Digital device are playing a crucial role in everyone’s life, hence, they are seeking for compact and high-performance devices which can be handled easily. For this researchers made drastic changes to the technology by scaling down the device for lesser area and high performance, but beyond some limit the CMOS device turned in opposite by showing short-
Sreenivasa Rao Ijjada +2 more
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TCAD simulation of photodetector spectral response
Proceedings IEEE/WIC International Conference on Web Intelligence (WI 2003), 2004In this paper, the spectral responsivity of a photodetector is determined by extracting optical parameters (refractive index and extinction coefficients) from the reflectivity measurement data and by treating the surface recombination velocity as a free parameter.
B. Jacob +4 more
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1998
The equipment for the fabrication of semiconductor devices has become sophisticated and thus, the field of competition of the technologies considered up to now has changed. The author analyzes the causes of the changes in the competition fields and a solution is proposed from the view point of the TCAD technology.
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The equipment for the fabrication of semiconductor devices has become sophisticated and thus, the field of competition of the technologies considered up to now has changed. The author analyzes the causes of the changes in the competition fields and a solution is proposed from the view point of the TCAD technology.
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2018
The EPFL substrate lumped device models have been coded in VerilogA and validated by comparison with TCAD simulations. The choice of VerilogA implementation allows to simulate the model in standard circuit simulators as the Cadence Spectre used in this chapter. The Synopsys Sentaurus Device simulator will be used as TCAD software for comparison.
Pietro Buccella +3 more
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The EPFL substrate lumped device models have been coded in VerilogA and validated by comparison with TCAD simulations. The choice of VerilogA implementation allows to simulate the model in standard circuit simulators as the Cadence Spectre used in this chapter. The Synopsys Sentaurus Device simulator will be used as TCAD software for comparison.
Pietro Buccella +3 more
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TCAD simulation of thermally evaporated germanium
physica status solidi c, 2013AbstractEpitaxial growth of germanium on silicon produces large misfit and threading dislocation densities which dramatically affect electronic properties of Ge. For this reason, TCAD standard models and parameters, optimized for bulk Ge, fail when applied to Ge epilayers.
DE IACOVO, ANDREA +3 more
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1995
This paper gives an overview about our research on three-dimensional process simulation. Today’s activities are worldwide still suffering from a lack of appropriate geometric modeling, robust gridding, accurate and verifiable physical models as well as computationally efficient numerical algorithms.
E. Leitner +4 more
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This paper gives an overview about our research on three-dimensional process simulation. Today’s activities are worldwide still suffering from a lack of appropriate geometric modeling, robust gridding, accurate and verifiable physical models as well as computationally efficient numerical algorithms.
E. Leitner +4 more
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Trends, demands and challenges in TCAD
Materials Science and Engineering: B, 2005Currently, TCAD is most heavily used in the device research and process integration phases of a technology life cycle. However, a major trend visible in the industry is the demand to apply TCAD tools far beyond the integration phase into manufacturing and yield optimization.
Ingo Bork +3 more
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