Results 51 to 60 of about 24,214 (199)

Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs

, 2015
We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors.
Akyol, Fatih, Bajaj, Sanyam, Chumbes, Eduardo M., Hung, Ting-Hsiang, Khurgin, Jacob, Krishnamoorthy, Sriram, Park, Pil Sung, Rajan, Siddharth, Reza, Shahed, Shoron, Omor F.   +9 more
core   +1 more source

Ion Crowding Effect in Unilaterally Downsized Perovskite Memristors

Advanced Science, EarlyView.
The downscaling of perovskite memristors incorporating monocrystalline nanoplates is accompanied by an ion crowding effect, which greatly enhances the local electric field in the vicinity of electrode. The highly controlled crowding of anions and vacancies results in anisotropic switching characteristics as well as unique morphology modification ...
Conghui Tan, Meiqi An, Weili Liu, Haotian Wang, Shuai Yang, Jing Li, Jianliang Li, Yingmin Luo, Chao Wang, Jiao Xu, Yaodan Chi, Yiming Yang   +11 more
wiley   +1 more source

Intelligent Manufacturing: TCAD-Assisted Adaptive Weighting Neural Networks

IEEE Access, 2018
Using machine intelligence on device and process performance prediction is an emerging methodology in the IC industry. While semiconductor technology computer-aided design (TCAD) has been researched and developed for over 30 years, it should contribute ...
Chien Y. Huang, Sze M. Fu, Parag Parashar, Chun H. Chen, Chandni Akbar, Albert S. Lin   +5 more
doaj   +1 more source

Characterization of Thin p-on-p Radiation Detectors with Active Edges

, 2016
Active edge p-on-p silicon pixel detectors with thickness of 100 $\mu$m were fabricated on 150 mm Float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection
Granja, C., Gädda, A., Härkönen, J., Jakubek, J., Jakubek, M., Kalliopuska, J., Peltola, T., Wu, X.   +7 more
core   +1 more source

Design and First Tests of a Radiation-Hard Pixel Sensor for the European X-Ray Free-Electron Laser [PDF]

, 2014
The high intensity and high repetition rate of the European X-ray Free-Electron Laser, presently under construction in Hamburg, requires silicon sensors which can stand X-ray doses of up to 1 GGy for 3 years of operation at high bias voltage.
Fretwurst, Eckhart, Klanner, Robert, Kopsalis, Ioannis, Schwandt, Joern, Zhang, Jiaguo   +4 more
core   +1 more source

Ultraviolet Photodetectors Based on 4H‐SiC With Honeycomb‐Like Light‐Trapping Structures

Advanced Science, EarlyView.
A facile photoelectrochemical etching method creates honeycomb‐like light‐trapping microstructures on SiC. These microstructures suppress UV reflection and enhance absorption by extending the optical path and facilitating multiple internal reflections, while strengthening the local electric field.
Huifan Xiong, Xiliang Luo, Qunsi Yang, Yibo Hu, Jieshi Chen, Lihui Song, Deren Yang, Xiaodong Pi   +7 more
wiley   +1 more source

Remediation of contaminated marine sediment using bentonite, kaolin and sand as capping materials [PDF]

, 2019
There is a growing public concern over the issue of sediment contamination resulting from industrial, municipal wastewater, mining activities, and improper use of chemical fertilizer or pesticides.
Kabir Aliyu, Mohammed
core   +1 more source

An Early Warning System for Asteroid Impact

, 2010
Earth is bombarded by meteors, occasionally by one large enough to cause a significant explosion and possible loss of life. Although the odds of a deadly asteroid strike in the next century are low, the most likely impact is by a relatively small ...
Tonry, John L.
core   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Design Decoupling of Inner- and Outer-Gate Lengths in Nanosheet FETs for Ultimate Scaling

IEEE Journal of the Electron Devices Society
Using a full design-technology-co-optimization (DTCO) methodology, we show the advantages of design decoupling of inner - and outer-gates in gate-all-around nanosheet FETs.
Krishna K. Bhuwalka, Oskar Baumgartner, Hao Wu, Lei Hou, Gerhard Rzepa, Dmitry Yakimets, Markus Karner, Changze Liu   +7 more
doaj   +1 more source