Results 61 to 70 of about 24,114 (195)

Design Decoupling of Inner- and Outer-Gate Lengths in Nanosheet FETs for Ultimate Scaling

IEEE Journal of the Electron Devices Society
Using a full design-technology-co-optimization (DTCO) methodology, we show the advantages of design decoupling of inner - and outer-gates in gate-all-around nanosheet FETs.
Krishna K. Bhuwalka, Oskar Baumgartner, Hao Wu, Lei Hou, Gerhard Rzepa, Dmitry Yakimets, Markus Karner, Changze Liu   +7 more
doaj   +1 more source

Analytics-statistics mixed training and its fitness to semisupervised manufacturing.

PLoS ONE, 2019
While there have been many studies using machine learning (ML) algorithms to predict process outcomes and device performance in semiconductor manufacturing, the extensively developed technology computer-aided design (TCAD) physical models should play a ...
Parag Parashar, Chun Han Chen, Chandni Akbar, Sze Ming Fu, Tejender S Rawat, Sparsh Pratik, Rajat Butola, Shih Han Chen, Albert S Lin   +8 more
doaj   +1 more source

Low Gain Avalanche Detectors (LGAD) for particle physics and synchrotron applications [PDF]

, 2018
A new avalanche silicon detector concept is introduced with a low gain in the region of ten, known as a Low Gain Avalanche Detector, LGAD. The detector's characteristics are simulated via a full process simulation to obtain the required doping profiles ...
Ashby, J., Bates, R., Bullough, M., Doherty, F., Flores, L., Maneuski, D., Moffat, N., Simon, L., Tartoni, N.   +8 more
core   +1 more source

Hybrid Convolutional Neural Network‐Analytical Model for Prediction of Line Edge Roughness‐Induced Performance Variations in Fin‐Shaped Field‐Effect Transistor Devices and SRAM

Advanced Intelligent Systems, EarlyView.
This work presents a hybrid model for predicting the electrical characteristics of fin‐shaped field‐effect transistor devices and SRAM with line edge roughness. The model consists of a convolutional neural network (CNN) and an analytical model that simulates the electrical characteristics of transistors using the outputs of CNN, enabling fast and ...
Jaehyuk Lim, Myongjin Kim, Changwoo Han, Hyoung Won Baac, Changhwan Shin   +4 more
wiley   +1 more source

Characterization of Thin p-on-p Radiation Detectors with Active Edges

, 2016
Active edge p-on-p silicon pixel detectors with thickness of 100 $\mu$m were fabricated on 150 mm Float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection
Granja, C., Gädda, A., Härkönen, J., Jakubek, J., Jakubek, M., Kalliopuska, J., Peltola, T., Wu, X.   +7 more
core   +1 more source

Impact of self-heating on the statistical variability in bulk and SOI FinFETs [PDF]

, 2015
In this paper for the first time we study the impact of self-heating on the statistical variability of bulk and SOI FinFETs designed to meet the requirements of the 14/16nm technology node.
Alexander, Craig, Asenov, Asen, Brown, Andrew R., Cheng, Binjie, Millar, Campbell, Nedjalkov, Mihail, Wang, Liping   +6 more
core   +1 more source

Computational design of two‐dimensional MA2Z4 family field‐effect transistor for future Ångström‐scale CMOS technology nodes

InfoMat, EarlyView.
Two‐dimensional MA2Z4 such as MoSi2N4 offer a new path to extend transistor scaling beyond the limits of silicon. Due to their exceptional properties, these 2D semiconductors are promising candidates for future Ångström‐scale CMOS technology. This review outlines the computational design and roadmap bridging materials discovery, device design and ...
Che Chen Tho, Zongmeng Yang, Shibo Fang, Shiying Guo, Liemao Cao, Chit Siong Lau, Fei Liu, Shengli Zhang, Jing Lu, L. K. Ang, Lain‐Jong Li, Yee Sin Ang   +11 more
wiley   +1 more source

Beyond ideal models: non-idealities in TCAD simulations of dielectric-modulated FETs for label-free biosensing

Frontiers in Electronics
Dielectric modulation in field-effect transistors (FETs) for label-free biosensing have been extensively explored to date, mostly due to the availability of semiconductor device technology computer-aided design (TCAD) tools.
Rupam Goswami, Vivek Menon U, Suman Kumar Mitra, Deepjyoti Deb, Prachuryya Subash Das, Hirakjyoti Choudhury, Raja Vipul Gautam   +6 more
doaj   +1 more source

Usage and Limitation of Standard Mobility Models for TCAD Simulation of Nanoscaled FD-SOI MOSFETs

Active and Passive Electronic Components, 2015
TCAD tools have been largely improved in the last decades in order to support both process and device complementary simulations which are usually based on continuously developed models following the technology progress.
A. Ciprut, A. Chelly, A. Karsenty
doaj   +1 more source

Triple combination of amantadine, ribavirin, and oseltamivir is highly active and synergistic against drug resistant influenza virus strains in vitro. [PDF]

PLoS ONE, 2010
The rapid emergence and subsequent spread of the novel 2009 Influenza A/H1N1 virus (2009 H1N1) has prompted the World Health Organization to declare the first pandemic of the 21st century, highlighting the threat of influenza to public health and ...
Jack T Nguyen, Justin D Hoopes, Minh H Le, Donald F Smee, Amy K Patick, Dennis J Faix, Patrick J Blair, Menno D de Jong, Mark N Prichard, Gregory T Went   +9 more
doaj   +1 more source