Results 81 to 90 of about 24,114 (195)

Next generation of TCAD environments for MEMS design [PDF]

2008 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, 2008
Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/handle/2042/16838)
Triltsch, Udo, Büttgenbach, Stephanus
openaire   +3 more sources

Spectrally Tuned Floating‐Gate Synapse Based on Blue‐ and Red‐Absorbing Organic Molecules for Wavelength‐Selective Neural Networks and Fashion Image Classifications

Advanced Functional Materials, Volume 36, Issue 13, 12 February 2026.
The characteristics of a vertical floating gate heterostructure transistor device that exhibits neuromorphic potentiation under visible light illumination are investigated. Due to spectrally‐tuned absorbance properties of each thin film layer and introduction of tunneling dielectric, the device enables wavelength‐selective tuning of synaptic plasticity
Seungme Kang, Jisoo Park, Jinwoong Hong, Jinmin Park, Jeongbo Lee, Hyeonjung Kim, Wonjun Shin, Eva Bestelink, Radu A. Sporea, Seyong Oh, Chung Whan Lee, Yun‐Hi Kim, Hocheon Yoo   +12 more
wiley   +1 more source

Electrical TCAD Simulation of STT-MRAMs

2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
In this paper, we propose to develop a full TCAD simulation, using a commercial tool (Sentaurus), of an STT-MRAM device to better understand its electrical behavior. To our knowledge, it is the first time that a simulated I-V hysteresis loop is calibrated on experimental data.
Saifi, Hanane, Postel-Pellerin, Jérémy, Yazigy, Nicole, Couzi, Noémie, Marca, Vincenzo, Canet, Pierre, Caçoilo, Nuno, Di Pendina, Grégory, Sousa, Ricardo   +8 more
openaire   +2 more sources

Using Bayesian Optimization to Increase the Efficiency of III‐V Multijunction Solar Cells

Advanced Theory and Simulations, Volume 9, Issue 2, February 2026.
Technology Computer Aided Design (TCAD) modeling is crucial for designing complex optoelectronic devices like III‐V multijunction solar cells. Bayesian optimization is proposed as a robust method to address challenges in optimizing costly black‐box TCAD solvers.
Pablo F. Palacios, Carlos Algora
wiley   +1 more source

Effect of Gate Length Relative to Recess Coverage on the Performance of Enhancement‐Mode β‐Ga2O3 MOSFETs

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
Gate‐length engineering in recessed‐gate enhancement‐mode β‐Ga2O3 metal‐oxide‐semiconductor filed effect transistors was investigated by extending the gate to fully cover the etched recess. Complete recess coverage improves electrostatic control, reduces series resistance, shifts the threshold voltage positively, and enhances mobility, on‐resistance ...
Ching‐Hsuan Lee, Sheng‐Ti Chung, Siddharth Rana, Chien‐Nan Hsiao, Tejender Singh Rawat, Yi‐Kai Hsiao, Hao‐Chung Kuo, Ray‐Hua Horng   +7 more
wiley   +1 more source

Higher‐Order Temporal Dynamics in Complementary Charge Trap Memristor for High‐Dimensional Reservoir Computing

Advanced Functional Materials, Volume 36, Issue 1, 2 January 2026.
A complementary charge‐trap memristor (CoCTM) featuring a unique current transient with tunable overshoot‐relaxation dynamics is introduced for high‐resolution reservoir computing. By leveraging higher‐order temporal dynamics from engineered trapping layers, the device generates multiple output states from a single input, forming rich, high‐dimensional
Alba Martinez, Younghyun Lee, Geunyoung Kim, Woojoon Park, Jingyao Yu, Sooyeon Narie Kay, Eun Young Kim, Hakseung Rhee, Do Hoon Kim, Kyung Min Kim   +9 more
wiley   +1 more source

Powernet: SOI Lateral Power Device Breakdown Prediction With Deep Neural Networks

IEEE Access, 2020
The breakdown performance is a critical metric for power device design. This paper explores the feasibility of efficiently predicting the breakdown performance of silicon on insulator (SOI) lateral power device using multi-layer neural networks as an ...
Jing Chen, Mohamed Baker Alawieh, Yibo Lin, Maolin Zhang, Jun Zhang, Yufeng Guo, David Z. Pan   +6 more
doaj   +1 more source

Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

, 2017
Silicon pixel detectors are at the core of the current ATLAS detector and its planned upgrade. As the detectors in closest proximity to the interaction point, they will be exposed to a significant amount of radiation: prior to the HL-LHC, the innermost ...
Nachman, Benjamin
core  

Simulations of the breakdown characteristics of n-on-p backside-illumination Silicon Photomultipliers by TCAD

Results in Physics, 2018
This paper investigates, using Synopsys Sentaurus TCAD simulation, the dependence of the breakdown voltage of n-on-p backside-illumination Silicon Photomultipliers (BSI-SiPM) on the implantation dose, the implantation energy and the screening SiO2 ...
Ran He, Guangqing Yan, Jian Liu, Wenxuan Cheng, Rongdan Liu, Kun Liang, Ru Yang, Dejun Han   +7 more
doaj   +1 more source

Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade

, 2013
In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost ...
Bagolini, A., Bomben, M., Boscardin, M., Bosisio, L., Calderini, G., Chauveau, J., Giacomini, G., La Rosa, A., Marchori, G., Zorzi, N.   +9 more
core   +1 more source