Results 81 to 90 of about 24,214 (199)
Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures
physica status solidi (a), Volume 223, Issue 7, 7 April 2026.The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu +2 more
wiley +1 more source
Electrical TCAD Simulation of STT-MRAMs
2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)In this paper, we propose to develop a full TCAD simulation, using a commercial tool (Sentaurus), of an STT-MRAM device to better understand its electrical behavior. To our knowledge, it is the first time that a simulated I-V hysteresis loop is calibrated on experimental data.
Saifi, Hanane +8 more
openaire +2 more sources
Toward Determination of the Critical Breakdown Field in Rutile Sn1‐x Ge x O2 Alloys
physica status solidi (a), Volume 223, Issue 6, 20 March 2026.Mansur and collaborators report on experiments designed to determine the critical field for electrostatic breakdown in ultra‐wide‐bandgap rutile Sn1‐xGexO2 alloys. Lateral metal–semiconductor–metal structures fabricated on undoped thin‐film alloys with x = 70% grown by pulsed‐laser deposition show breakdown voltages approach 900 V, corresponding to a ...
Uddrity Mansur +4 more
wiley +1 more source
Gallium Nitride Schottky Devices for UV and Particle Sensing Applications
physica status solidi (a), Volume 223, Issue 5, 6 March 2026.Gallium nitride Schottky devices on native substrates have potential for reliable, low‐leakage, and high‐performance radiation detection in extreme environments. The study explores carrier dynamics by laterally scanning a pulsed‐UV laser from the edge of the Schottky to assess charge collection, and extracts defect properties by optical‐DLTS that ...
Alexandre William Walker +6 more
wiley +1 more source
Advanced Energy and Sustainability Research, Volume 7, Issue 3, March 2026.This review examines the evolution and current state of concentrated photovoltaic systems, focusing on materials, manufacturing pathways, and thermal management challenges. Advanced cooling techniques and emerging applications are assessed alongside recent digital integration strategies. Through linking performance gains with practical limitations, the
Abdul Ghani Olabi +7 more
wiley +1 more source
Powernet: SOI Lateral Power Device Breakdown Prediction With Deep Neural Networks
IEEE Access, 2020 The breakdown performance is a critical metric for power device design. This paper explores the feasibility of efficiently predicting the breakdown performance of silicon on insulator (SOI) lateral power device using multi-layer neural networks as an ...
Jing Chen +6 more
doaj +1 more source
Review of Memristors for In‐Memory Computing and Spiking Neural Networks
Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari +2 more
wiley +1 more source
Results in Physics, 2018 This paper investigates, using Synopsys Sentaurus TCAD simulation, the dependence of the breakdown voltage of n-on-p backside-illumination Silicon Photomultipliers (BSI-SiPM) on the implantation dose, the implantation energy and the screening SiO2 ...
Ran He +7 more
doaj +1 more source
Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector
, 2017 Silicon pixel detectors are at the core of the current ATLAS detector and its planned upgrade. As the detectors in closest proximity to the interaction point, they will be exposed to a significant amount of radiation: prior to the HL-LHC, the innermost ...
Nachman, Benjamin
core
Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.This work presents a hybrid model for predicting the electrical characteristics of fin‐shaped field‐effect transistor devices and SRAM with line edge roughness. The model consists of a convolutional neural network (CNN) and an analytical model that simulates the electrical characteristics of transistors using the outputs of CNN, enabling fast and ...
Jaehyuk Lim +4 more
wiley +1 more source