Cette thèse porte sur l’étude de transistor à effet tunnel (TFET) en FDSOI à géométries planaire et triple grille/nanofils. Nous rapportons pour la première fois des TFETs fabriqués par un processus basse température (600°C), qui est identique à celui utilisé pour l’intégration monolithique 3D.
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Quantum Sensitive, Record Dynamic Range Terahertz Tunnel Field-Effect Transistor Detectors Exploiting Multilayer Graphene/hBN/Bilayer Graphene/hBN Heterostructures. [PDF]
Viti L +4 more
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Improving the Performance of Arsenene Nanoribbon Gate-All-Around Tunnel Field-Effect Transistors Using H Defects. [PDF]
Song S +5 more
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Evolution of Tribotronics: From Fundamental Concepts to Potential Uses. [PDF]
He Y, Tian J, Li F, Peng W, He Y.
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Ultra-sensitive heterojunction double gate BioTFET device for SARS-CoV-2 biomolecules detection. [PDF]
Vimala P +6 more
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New tunneling source follower with low 1/f noise and high voltage gain. [PDF]
Kim KY +9 more
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Ternary Logic Design Based on Novel Tunneling-Drift-Diffusion Field-Effect Transistors. [PDF]
Lu B +7 more
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Recent progress on field-effect transistor-based biosensors: device perspective. [PDF]
Smaani B +7 more
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FS-iTFET: advancing tunnel FET technology with Schottky-inductive source and GAA design. [PDF]
Lin JT, Tai WH.
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Nanosheet integration of induced tunnel field-effect transistor with lower cost and lower power. [PDF]
Lin JT, Kuo CY.
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