Results 201 to 210 of about 39,310 (257)
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Total ionizing dose effects on flash memories
1998 IEEE Radiation Effects Data Workshop. NSREC 98. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.98TH8385), 2002This paper presents the results of measurements performed on two different flash memory types, NOR and NAND technologies. The data suggest that the degradation is influenced by the activation of integrated charge pump circuits. The NAND type device functionally failed at lower TID level than the NOR technology, even when the NOR device was used with ...
D.N. Nguyen, C.I. Lee, A.H. Johnston
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Total Ionizing Dose Effects in Si-Based Tunnel FETs
IEEE Transactions on Nuclear Science, 2014Total ionizing dose (TID) effects in Si-based tunnel finite element transfers (FETs) were investigated for the first time. Under 10-keV X-ray irradiation environment, along with the increase in total dose, a shift of the transfer characteristics and an increase in the interface trap density could be observed.
Lili Ding +8 more
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Total Ionizing Dose Effects on DRAM Data Retention Time
IEEE Transactions on Nuclear Science, 2014Dynamic random access memory (DRAM) data retention time degradation induced by radiation exposure is investigated in this paper. We present the experimental setup and the results of total ionizing dose (TID) test on a COTS SDRAM device. We observed a significant retention time reduction related to the absorbed dose and we assume radiation induced ...
Bacchini, A +3 more
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Total ionizing dose effects in shallow trench isolation oxides
Microelectronics Reliability, 2008The peaked evolution of leakage current with total ionizing dose observed in transistors in 130 nm generation technologies is studied with field oxide field effect transistors (FOXFETs) that use the shallow trench isolation as gate oxide. The overall radiation response of these structures is determined by the balance between positive charge trapped in ...
Faccio F +6 more
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Total Ionizing Dose effects on 4Mbit Phase Change Memory arrays
2007 9th European Conference on Radiation and Its Effects on Components and Systems, 2007We investigate Total Ionizing Dose effects on 4Mbit Phase Change Memories (PCM) arrays. We demonstrate a high robustness of PCM against ionizing radiation. We irradiated PCM with 8-MeV electrons. Only small variations are measured in the cell distributions after irradiation.
Gasperin Alberto +10 more
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Total ionizing dose effects in a SRAM-based FPGA
1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463), 2003We have measured the effects of total ionizing dose on Xilinx XC4036X FPGAs. The FPGAs were irradiated at a dose rate of about, 0.5 krad/hr. An average total dose of 39 krad(Si) and 16 krad(Si) were absorbed by the XL-series and XLA-series FPGAs, respectively, before the power supply current increased.
D.M. MacQueen +3 more
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Total ionizing dose effects on voltage-to-frequency converters
1998 IEEE Radiation Effects Data Workshop. NSREC 98. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.98TH8385), 2002Three different voltage-to-frequency converters were tested to determine how ionizing radiation affected their critical specifications. All three were fabricated with bipolar technologies. A popular charge-balancing architecture converter, AD652, was most sensitive with low dose rate (LDR) due to its tight specifications.
C.I. Lee, A.H. Johnston, B.G. Rax
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