Results 221 to 230 of about 39,310 (257)

Process variation dependence of total ionizing dose effects in bulk nFinFETs

Microelectronics Reliability, 2018
Abstract The electrical characteristics of bulk nFinFETs after total-ionizing-dose (TID) irradiation were experimentally evaluated with respect to the process variation (PV). The inconsistent transfer characteristics, particularly the different threshold voltage shifts under an identical bias condition and irradiation dose, were investigated through ...
Bo Li 0051, Yunbo Huang, Ling Yang, Qingzhu Zhang, Zhongshan Zheng, Binhong Li, Huiping Zhu, Jianhui Bu, Huaxiang Yin, Jiajun Luo, Zhengsheng Han, Haibin Wang   +11 more
openaire   +1 more source

Total Ionizing Dose Effects on a COTS Microcontroller

2021 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2021
Runcheng Liang, Faguo Chen, Rong Guo, Jing Zhang, Ri Zhao, Zhaoxing Liu   +5 more
openaire   +1 more source

Total Ionizing Dose and Displacement-Damage Effects in Microelectronics

MRS Bulletin, 2003
AbstractWhen exposed to radiation, the function of microelectronic devices is not only degraded by single-event phenomena but by cumulative effects. Most of the energy lost by radiation passing through semiconductors is through ionization. Buildup of charge in gate oxide layers and of interface and border traps due to ionization result in semipermanent
openaire   +1 more source

Total ionizing dose effects on graphene-based charge-trapping memory

Science China Information Sciences, 2019
This study investigates the total ionizing dose effects in graphene-based charge-trapping memory (GCTM) capacitors by using $^{60}$Co $\\gamma$-irradiation. Electrical properties including $C-V$ hysteresis window, gate leakage current, and flat band voltage shifts are evaluated with ionizing dose levels up to 1 Mrad (Si).
Kai Xi, Jinshun Bi, Sandip Majumdar, Bo Li 0051, Jing Liu 0035, Yannan Xu, Ming Liu 0022   +6 more
openaire   +1 more source

Total-ionizing-dose effects and reliability of carbon nanotube FET devices

Microelectronics Reliability, 2014
Abstract Electrical stress and 10-keV X-ray irradiation and annealing responses are evaluated for carbon nanotube field effect transistors for nonvolatile memory applications. Less than 3% change in the drain current is observed during constant-voltage stress.
Cher Xuan Zhang, En-xia Zhang, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, Chris Rutherglen, Kosmas Galatsis   +6 more
openaire   +1 more source

Total-Ionizing-Dose Effects in Modern CMOS Technologies

IEEE Transactions on Nuclear Science, 2006
This review paper discusses several key issues associated with deep submicron CMOS devices as well as advanced semiconductor materials in ionizing radiation environments. There are, as outlined in the ITRS roadmap, numerous challenges ahead for commercial industry in its effort to track Moore's Law down to the 45 nm node and beyond.
openaire   +1 more source

Effects of total ionizing dose on single event effect sensitivity of FRAMs

Microelectronics Reliability, 2019
Abstract Reliability of ferroelectric random access memories (FRAMs) is an important issue in Space application. In this work, we investigated the impact of total ionizing dose (TID) on single event effect (SEE) sensitivity of FRAMs. Five types of errors were detected.
Qinggang Ji, Jie Liu, Dongqing Li, Tianqi Liu, Bing Ye, Peixiong Zhao, Youmei Sun   +6 more
openaire   +1 more source

Total ionizing dose effects in multiple-gate field-effect transistor

Semiconductor Science and Technology, 2017
Abstract This paper focuses on total ionizing dose (TID) effects induced in multiple-gate field-effect transistors. The impact of device architecture, geometry and scaling on the TID response of multiple-gate transistors is reviewed in both bulk and silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technologies.
Marc Gaillardin, Claude Marcandella, Martial Martinez, Mélanie Raine, Philippe Paillet, Olivier Duhamel, Nicolas Richard   +6 more
openaire   +1 more source

Dose-Rate Effects on the Total-Ionizing-Dose Response of Piezoresistive Micromachined Cantilevers

IEEE Transactions on Nuclear Science, 2018
Total-ionizing-dose-induced resonance frequency shifts in piezoresistive micromachined cantilevers are experimentally shown to be dose-rate dependent. Devices were irradiated to 1 Mrad(SiO2) at rates from 5.4 to 30.3 krad(SiO2)/min, with lower rate exposures producing up to four-times more negative frequency shifts than higher rate exposures.
Charles N. Arutt, Wenjun Liao, Huiqi Gong, Pranoy Deb Shuvra, Ji-Tzuoh Lin, Michael L. Alles, Bruce W. Alphenaar, Jim L. Davidson, Kevin M. Walsh, Shamus McNamara, En Xia Zhang, Andrew L. Sternberg, Daniel M. Fleetwood, Robert A. Reed, Ronald D. Schrimpf   +14 more
openaire   +1 more source

Total Ionizing Dose and Dose Rate Effects in Candidate Spacecraft Electronic Devices

2008 IEEE Radiation Effects Data Workshop, 2008
Total dose tests of common devices reveal unexpected dose rate sensitivity. Devices from the same vendor procured to SMD versus military specifications exhibit substantially different dose rate effects. Behavior and critical parameters are compared and discussed.
Alexander L. Bogorad, Justin J. Likar, Stephen K. Moyer, Audrey J. Ditzler, Graham P. Doorley, Roman Herschitz   +5 more
openaire   +1 more source