Results 211 to 220 of about 39,310 (257)

Effects of Total Dose Ionizing, Radiation on the 1802 Microprocessor

IEEE Transactions on Nuclear Science, 1977
Several versions of the 1802 CMOS microprocessor were subjected to Co-60 irradiations. Total dose data is provided for production line parts from two vendors, a specially processed radiation hard lot, and one developmental SOS unit. The increase in total dose failure level from 1 x 104 to 5 x 105 rads(Si) for the specially processed Parts proves the ...
E. E. King, R. L. Martin
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Total ionizing dose effects on digital micromirror devices

Journal of Astronomical Telescopes, Instruments, and Systems, 2020
There is interest in deploying digital micromirror devices (DMDs) in space for use in multi-object spectrometers, but the devices must first be qualified for space deployment. An environmental test campaign has been carried out on eXtended Graphics Array (XGA) DMDs to qualify the devices for space deployment.
Kathleen Oram, Zoran Ninkov, Alexis Irwin, Dmitry Vorobiev, Martin Carts   +4 more
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Total ionizing dose effects on triple-gate FETs

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, 2012
By radiating different amount of radiation to the pseudo-MOS transistor, the corresponding I-V characterristic curve can be obtained. Additionally, the density of interface traps and the density of trapped-oxide charges which origin from the buried oxide layer of the SOI material while under radiating can be obtained using the middle band voltage ...
Shi-Yao Liu, Wei He, Jian-Min Cao, Si-Wen Huang, Xiao-Jin Zhao   +4 more
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Total Ionizing Dose Effects in Piezoelectric MEMS Relays

IEEE Transactions on Nuclear Science, 2013
This paper investigates total ionizing dose (TID) effects on the piezoelectric properties of lead zirconate titanate (PZT). The capacitance and contact voltage of thin-film, PZT-based relays were measured following incremental 60Co TID irradiations. The devices were held in several different bias conditions, during exposure.
Robert M. Proie, Ronald G. Polcawich, Cory D. Cress, Luz M. Sanchez, Alden D. Grobicki, Jeffrey S. Pulskamp, Nicolas J.-H. Roche   +6 more
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Total ionizing dose effects on nanosheet and nanowire field effect transistors

Microelectronics Reliability, 2021
Abstract Total ionizing dose (TID) effects are investigated in a nanosheet gate-all-around field effect transistor using three-dimensional technology computer aided design simulation. TID is a reliability concern in terms of building up trap charges in any dielectric surrounding the transistor body.
Jin-Woo Han, Jungsik Kim, M. Meyyappan
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Total-Ionizing-Dose Effects on InGaAs FinFETs With Modified Gate-stack

IEEE Transactions on Nuclear Science, 2020
We evaluate the total-ionizing-dose (TID) responses of InGaAs nMOS fin field-effect transistors (FinFETs) with a modified gate-stack irradiated with 10-keV X-rays under different gate biases. This modified InGaAs nMOS FinFET process shows decreased subthreshold leakage current and increased hysteresis in as-processed devices, and reduced hole trapping ...
Simeng E. Zhao, Stefano Bonaldo, Pengfei Wang, En Xia Zhang, Niamh Waldron, Nadine Collaert, Vamsi Putcha, Dimitri Linten, Simone Gerardin, Alessandro Paccagnella, Ronald D. Schrimpf, Robert A. Reed, Daniel M. Fleetwood   +12 more
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Total Ionizing Dose Effect in LDMOS Oxides and Devices

IEEE Transactions on Nuclear Science, 2019
Laterally diffused metal–oxide–semiconductors transistors PD-silicon on insulator 150-nm mixed technology from Microchip are irradiated with 60Co gamma rays. Those irradiations have revealed a high sensitivity of the LDnMOS and LDpMOS pointing out that the main sensitive parameter is the ON-resistance.
T. Borel, S. Furic, E. Leduc, A. Michez, J. Boch, A. Touboul, B. Azais, S. Danzeca, L. Dusseau   +8 more
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Total Ionizing Dose Effects on Triple-Gate FETs

IEEE Transactions on Nuclear Science, 2006
This paper investigates the total ionizing dose response of advanced nonplanar triple-gate transistors with short gate length, as a function of device geometry. Experiments and three-dimensional (3-D) simulations using a radiation dedicated code are used to analyze the buildup of a trapped charge in the buried oxide and its impact on the device ...
M. Gaillardin, P. Paillet, V. Ferlet-Cavrois, O. Faynot, C. Jahan, S. Cristoloveanu   +5 more
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Total-Ionizing-Dose Effects in Piezoresistive Micromachined Cantilevers

IEEE Transactions on Nuclear Science, 2017
We evaluate the response of T-shaped, asymmetric, piezoresistive, micromachined cantilevers fabricated on p-type Si to 10-keV X-ray irradiation. The resonant frequency decreases by 25 ppm at 2.1 Mrad(SiO2), and partially recovers during post-irradiation annealing.
Huiqi Gong, Wenjun Liao, En Xia Zhang, Andrew L. Sternberg, Michael W. McCurdy, Jim L. Davidson, Robert A. Reed, Daniel M. Fleetwood, Ronald D. Schrimpf, Pranoy Deb Shuvra, Ji-Tzuoh Lin, Shamus McNamara, Kevin M. Walsh, Bruce W. Alphenaar, Michael L. Alles   +14 more
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Total ionizing dose effects in bipolar devices and circuits

IEEE Transactions on Nuclear Science, 2003
The development of the investigation of total dose effects in bipolar devices and circuits is covered over the past 40 years. There are at least four chronological stages in this field of study highlighted by the early studies on discrete transistors, the effects of total dose on linear circuits and I/sup 2/L, the effects of total dose on recessed ...
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