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Single Event Latchup (SEL) and Total Ionizing Dose (TID) of a 1 Mbit Magnetoresistive Random Access Memory (MRAM)

2010 IEEE Radiation Effects Data Workshop, 2010
A 1 Mbit MRAM, a nonvolatile memory that uses magnetic tunnel junction (MJT) storage elements, has been characterized for total ionizing dose (TID) and single event latchup (SEL). Our results indicate that these devices show no single event latchup up to an effective LET of 84 MeV-cm2/mg (where our testing ended) and no bit failures to a TID of 75 krad
Jason Heidecker   +2 more
exaly   +2 more sources

Total Ionizing Dose (TID) Effects on Variability and Mismatch in MOSFETs with Novel Layouts

2025 39th Symposium on Microelectronics Technology and Devices (SBMicro)
Vinicius Vono Peruzzi   +5 more
openaire   +1 more source

Total Ionizing Dose Effects on Nanosheet and Nanowire Field Effect Transistors

Microelectronics Reliability, 2021
Jungsik Kim   +2 more
exaly  

Influence of Fin and Finger Number on TID Degradation of 16-Nm Bulk FinFETs Irradiated to Ultrahigh Doses

IEEE Transactions on Nuclear Science, 2022
Serena Mattiazzo   +2 more
exaly  

Radiation-hardened library cell template and its total ionizing dose (TID) delay characterization in 65nm CMOS process

2014 IEEE 57th International Midwest Symposium on Circuits and Systems (MWSCAS), 2014
Joseph S. Chang   +6 more
openaire   +2 more sources

Total Ionizing Dose (TID) Effects on \hbox{TaO}ₓ -Based Resistance Change Memory

IEEE Transactions on Electron Devices, 2011
Yimao Cai, Fei Tan, Yangyuan Wang
exaly  

Total Ionizing Dose (TID) effect on the IHEP-IME strip-typed AC-LGAD sensor

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Weiyi Sun   +5 more
openaire   +1 more source

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