Results 171 to 180 of about 8,141,274 (193)

Total ionizing dose (TID) effect and single event effect (SEE) in quasi-SOI nMOSFETs

Semiconductor Science and Technology, 2013
This paper studies the total ionizing dose (TID) and single event effect (SEE) in quasi-SOI nMOSFETs for the first time. After exposure to gamma rays, the off-state leakage current (Ioff) of a quasi-SOI device increases with the accumulating TID, and the on-state bias configuration is shown to be the worst-case bias configuration during irradiation ...
Fei Tan, Ru Huang, Xia An, Weikang Wu, Hui Feng, Liangxi Huang, Jiewen Fan, Xing Zhang, Yangyuan Wang   +8 more
openaire   +1 more source

Total Ionizing Dose (TID) Effects in Ultra-Thin Body Ge-on-Insulator (GOI) Junctionless CMOSFETs With Recessed Source/Drain and Channel

IEEE Transactions on Nuclear Science, 2017
Total ionizing dose (TID) effects in ultra-thin body Ge on Insulator (GOI) junctionless CMOSFETs with recessed source/drain and channel have been studied. 10-keV X-ray irradiation leads to net hole trapping at the top and bottom Ge/dielectric interfaces of both GOI NFETs and PFETs.
Peide Ye, Robert Reed, Kai Ni
exaly   +2 more sources

A Review of Dose Rate Dependent Effects of Total Ionizing Dose (TID) Irradiations

IEEE Transactions on Nuclear Science, 1980
The literature has been reviewed in order to arrive at firm conclusions regarding total dose test procedures. The most important results are that there is little evidence for true dose rate effects for rates less than 10 rad/min. Hence a Cobalt-60 simulation of space radiation effects is completely valid if the irradiation bursts are greater than a few
openaire   +1 more source

Total Ionizing Dose (TID) Effects on $\hbox{TaO}_{x}$ -Based Resistance Change Memory

IEEE Transactions on Electron Devices, 2011
In this brief, the total ionizing dose (TID) effects of γ rays generated from a 60Co source on the TaOx-based resistive switching memory (resistive random-access memory, RRAM) is investigated. The low-resistance state (LRS) of the RRAM is immune to TID effects, whereas the sensitivity of the high-resistance state (HRS) of RRAM to TID effects depends on
Lijie Zhang, Ru Huang, Dejin Gao, Pan Yue, Poren Tang, Fei Tan, Yimao Cai, Yangyuan Wang   +7 more
openaire   +1 more source

Characterization of commercial high density memories under low dose rate total ionizing dose (TID) testing for NASA programs

1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference, 2002
This paper reports the results of low dose rate (0.04-0.08 rads (Si)/sec) total ionizing dose (TID) tests performed on different types of commercial high density memories. The parts used in this evaluation, represented memory technologies such as DRAMs, SRAMs, EEPROMs and Flash memories in 5 V and/or 3.3 V versions from various manufacturers of plastic
A.K. Sharma, K. Sahu
openaire   +1 more source

Accumulative total ionizing dose (TID) and transient dose rate (TDR) effects on planar and vertical ferroelectric tunneling-field-effect-transistors (TFET)

Microelectronics Reliability, 2020
Abstract Total ionizing dose (TID) and transient dose rate (TDR) effects on planar and vertical ferroelectric tunneling-field-effect-transistors (TFET) are investigated using TCAD simulations. First, two types of TFET structures are constructed numerically. Then the electrical properties of these devices are studied under different irradiation doses,
Gangping Yan, Gaobo Xu, Jinshun Bi, Guoliang Tian, Qiuxia Xu, Huaxiang Yin, Yongliang Li   +6 more
openaire   +1 more source

Compendium of Single Event Transient (SET) and Total Ionizing Dose (TID) Test Results for Commonly Used Voltage Comparators

2017 IEEE Radiation Effects Data Workshop (REDW), 2017
This data compendium reports single event transient (SET) and total ionizing dose (TID) test results for commonly used commercial-off-the-shelf (COTS) and radiation hardened voltage comparators targeted for possible use in space-based missions. Interesting trends in the variability of the radiation performance of these devices due to differences in lot
Amanda N Bozovich
exaly   +2 more sources

Heavy-Ion and Total Ionizing Dose (TID) Performance of a 1 Mbit Magnetoresistive Random Access Memory (MRAM)

2009 IEEE Radiation Effects Data Workshop, 2009
An MRAM is a nonvolatile memory that has been demonstrated and supports heavy ion immunity to an LET of approximately 69 MeV-cm 2 /mg for fluences to 10 8 ions/cm 2 ; and TED hardness in excess of 1 Mrad.
Romney R. Katti, John Lintz, Lance Sundstrom, Tony Marques, Steve Scoppettuolo, Douglas Martin   +5 more
openaire   +1 more source

Total Ionizing Dose (TID) Effects in Extremely Scaled Ultra-Thin Channel Nanowire (NW) Gate-All-Around (GAA) InGaAs MOSFETs

IEEE Transactions on Nuclear Science, 2015
InGaAs nanowire (NW) gate-all-around (GAA) MOSFETs exhibit superior radiation hardness compared to planar devices and FinFETs, benefitting from reduced gate-oxide electric fields. Applied gate bias during irradiation, channel thickness, and presence or absence of a forming gas anneal can strongly affect NW device radiation hardness. Low-frequency noise
Shufeng Ren, Mengwei Si, Kai Ni, Xin Wan, Jin Chen, Sungjae Chang, Xiao Sun, En Xia Zhang, Robert A. Reed, Daniel M. Fleetwood, Peide Ye, Sharon Cui, T. P. Ma   +12 more
openaire   +1 more source

Electron irradiation total ionizing dose (TID) effect of tunneling magnetoresistance sensors

Journal of Magnetism and Magnetic Materials, 2022
Y. Zhang, Y.Z. Wang, X.F. Han, H. Deng, H. Huang, J.H. Guo, Y. Liang, W.R. Si, A.F. Jiang, H.F. Liu, J.F. Feng, C.H. Wan, L. Yin, G.Q. Yu   +13 more
openaire   +1 more source