Results 91 to 100 of about 335,727 (374)
BSIM-CMG compact model for IC CAD: from FinFET to Gate-All-Around FET Technology
Journal of Microelectronic Manufacturing, 2020 We discuss the BSIM-CMG compact model for SPICE simulations of any common multi-gate (CMG) device. This is an industry standard model which has been used extensively for FinFETs IC design and simulation, and has now been extended to accurately model gate-
Avirup Dasgupta, Chenming Hu
doaj +1 more source
Transistor circuit increases range of logarithmic current amplifier [PDF]
, 1966 Circuit increases the range of a logarithmic current amplifier by combining a commercially available amplifier with a silicon epitaxial transistor.
Gilmour, G.
core +1 more source
A simple and controlled single electron transistor based on doping modulation in silicon nanowires
, 2006 A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films.
Deleonibus, S. +5 more
core +1 more source
Rigid Fluorescent Indacenetetraone‐Based Semiconducting Polymers via Knoevenagel Condensation
Advanced Functional Materials, EarlyView.New donor–acceptor polymers prepared by Knoevenagel condensation of indacenedithiophene‐ and indacenedifuran‐based aldehydes reveal an exceptionally rigid backbone, which is manifested in the remarkably narrow absorption and emission bands in red to near‐infrared region.
So‐Huei Kang +7 more
wiley +1 more source
Coaxial inverted geometry transistor having buried emitter [PDF]
, 1973 The invention relates to an inverted geometry transistor wherein the emitter is buried within the substrate. The transistor can be fabricated as a part of a monolithic integrated circuit and is particularly suited for use in applications where it is ...
Cress, S. B., Dunn, W. R., Hruby, R. J.
core +1 more source
Carbon Nanotube 3D Integrated Circuits: From Design to Applications
Advanced Functional Materials, EarlyView.As Moore's law approaches its physical limits, carbon nanotube (CNT) 3D integrated circuits (ICs) emerge as a promising alternative due to the miniaturization, high mobility, and low power consumption. CNT 3D ICs in optoelectronics, memory, and monolithic ICs are reviewed while addressing challenges in fabrication, design, and integration.
Han‐Yang Liu +3 more
wiley +1 more source
High intensity study of THz detectors based on field effect transistors [PDF]
, 2014 Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm^2 was studied for Si metal-oxide-semiconductor field-effect transistors and InGaAs high electron mobility transistors. The photoresponse increased linearly with increasing radiation
arxiv +1 more source
Design of Cryogenic SiGe Low-Noise Amplifiers [PDF]
, 2007 This paper describes a method for designing cryogenic silicon-germanium (SiGe) transistor low-noise amplifiers and reports record microwave noise temperature, i.e., 2 K, measured at the module connector interface with a 50-Ω generator.
Bardin, Joseph C. +2 more
core
U-shaped bilayer graphene channel transistor with very high Ion/Ioff ratio
, 2011 A novel graphene transistor architecture is reported. The transistor has a U-shaped geometry and was fabricated using a gallium focused ion beam (FIB). The channel conductance was tuned with a back gate.
Boden, Stuart +4 more
core +1 more source
Quantum thermal transistor [PDF]
, 2016 We demonstrate that a thermal transistor can be made up with a quantum system of 3 interacting subsystems , coupled to a thermal reservoir each. This thermal transistor is analogous to an electronic bipolar one with the ability to control the thermal ...
Drevillon, Jérémie +3 more
core +2 more sources