Results 91 to 100 of about 686,107 (395)

Ladder‐Type Benzene‐Perylene Dyes with Efficient Laser Properties in the Near‐IR by Detracting/Activating Low/High Frequency Vibronic Modes

Advanced Functional Materials, EarlyView.
The NNR‐n series of oligomeric nanographenes delivers exceptional emission performance. This work shows that this performance is originated by their ladder‐type structure, which effectively deactivates low‐frequency vibronic modes. This deactivation neglects the main pathway for non‐emissive deactivation, even in the near‐infrared region. The potential
Marcos Díaz‐Fernández, Álex Farrando Pérez, Fernando Gordillo Gámez, Pedro G. Boj, José M. Villalvilla, José A. Quintana, Yanpei Wan, Daniel Aranda, José Manuel Marín‐Beloqui, Jishan Wu, Zebing Zeng, María A. Díaz‐García, Juan Casado   +12 more
wiley   +1 more source

Magnetic bipolar transistor [PDF]

Applied Physics Letters, 2004
A magnetic bipolar transistor is a bipolar junction transistor with one or more magnetic regions, and/or with an externally injected nonequilibrium (source) spin. It is shown that electrical spin injection through the transistor is possible in the forward active regime.
Fabian, Jaroslav, Zutic, Igor, Sarma, S. Das   +2 more
openaire   +4 more sources

Indirect Thermographic Measurement of the Temperature of a Transistor Die during Pulse Operation

Sensors
This paper presents aspects related to the indirect thermographic measurement of a C2M0280120D transistor in pulse mode. The tested transistor was made on the basis of silicon carbide and is commonly used in many applications.
Arkadiusz Hulewicz, Krzysztof Dziarski, Łukasz Drużyński   +2 more
doaj   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

Advanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco, Valerio Francesco Annese, Valerio Galli, Ilaria Penna, Debora Russo, Marina Veronesi, Rita Scarpelli, Stefania Sabella, Mario Caironi   +8 more
wiley   +1 more source

Thermal transistor: Heat flux switching and modulating

, 2008
Thermal transistor is an efficient heat control device which can act as a heat switch as well as a heat modulator. In this paper, we study systematically one-dimensional and two-dimensional thermal transistors.
Aoki K., Braun O. M., Chang C. W., Chang C. W., Donadio D., Hu B., Hu B., Hu B., Lan J., Li B., Li B., Li B., Li B., Nosé S., Patton K. R., Pokrovsky V. L., Saira O.-P., Segal D., Terraneo M., Wang L., Wu G., Yang N., Zhang G.   +22 more
core   +1 more source

Formation of 2D Electron Gas at a Non‐Polar Perovskite Oxide Interface: SrHfO3/BaSnO3

Advanced Functional Materials, EarlyView.
Through experiments and Poisson‐Schrödinger simulations, 2D electron gas formed at the non‐polar SrHfO3/BaSnO3 interface is observed. A large conduction band offset enables modulation doping by the intrinsic deep donors in SrHfO3, resulting in carrier confinement in BaSnO3 without relying on interfacial polarization or termination‐layer engineering ...
Jongkyoung Ko, Oliver Bierwagen, Wonwoo Suh, Jeewon B. Choi, Celesta S. Chang, Kookrin Char   +5 more
wiley   +1 more source

Atmospheric Doping of Stretchable Polymer Semiconductors for Skin Electronics

Advanced Functional Materials, EarlyView.
An atmospheric doping system using oxygen molecules in air as dopants is introduced for stretchable polymer semiconductors. The chemisorbed oxygen molecules act as acceptor, lead to increase not only the hole concentration of the semiconductor film over two orders of magnitude (3.37 × 1017 cm−3) but also electrical properties of the field‐effect ...
Min Woo Jeong, Min Hyouk Kim, Jun Su Kim, Tae Uk Nam, Ngoc Thanh Phuong Vo, Kyu Ho Jung, Tae Il Lee, Jin Young Oh   +7 more
wiley   +1 more source

SnO Nanosheet Transistor with Remarkably High Hole Effective Mobility and More than Six Orders of Magnitude On-Current/Off-Current

Nanomaterials
Using novel SiO2 surface passivation and ultraviolet (UV) light anneal, a 12 nm thick SnO p-type FET (pFET) shows hole effective mobilities (µeff) of more than 100 cm2/V·s and 31.1 cm2/V·s at hole densities (Qh) of 1 × 1011 and 5 × 1012 cm−2 ...
Kuan-Chieh Chen, Jiancheng Wu, Pheiroijam Pooja, Albert Chin   +3 more
doaj   +1 more source

Table 1. Typical performance RF performance at Tcase = 25 �C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp �D ACPR885k ACPR1980k [PDF]

[1] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8- 13). PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz. [2] Measured within 30 kHz bandwidth.
Wimax Power Ldmos Transistor
core  

High‐Performance Field‐Effect Transistors and Phototransistors Array Based on Solution‐Processed Quasi‐1D Van der Waals Ta2Pd3S8 Crystals

Advanced Functional Materials, EarlyView.
Herein, the synthesis of Ta₂Pd₃S₈ nanowires is reported via scalable liquid cascade exfoliation and their integration into high‐mobility field‐effect transistors (FETs) and sensitive photodetectors, achieving carrier mobility of up to 27.3 cm2 V⁻¹ s⁻¹ and responsivities of 322.40 A W⁻¹ and 1.85 mA W⁻¹ for single nanowire and network devices ...
Kyung Hwan Choi, Bom Lee, Jinsu Kang, Byung Joo Jeong, Sooheon Cho, Sang Hoon Lee, Dahoon Kim, Yeong Hyeop Kim, Jongwha Chang, Hyung‐Suk Oh, Ji‐Hee Kim, Jae‐Hyun Lee, Hak Ki Yu, Jae‐Young Choi   +13 more
wiley   +1 more source