Comparative Study on the Separate Extraction of Interface and Bulk Trap Densities in Indium Gallium Zinc Oxide Thin-Film Transistors Using Capacitance–Voltage and Current–Voltage Characteristics [PDF]
, 2021 Dongho Lee +7 more
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LAB-to-FAB Transition of 2D FETs: Available Strategies and Future Trends
NanomaterialsThe last decade has seen dramatic progress in research on FETs with 2D channels. Starting from the single devices fabricated using exfoliated flakes in the early 2010s, by the early 2020s, 2D FETs being trialed for mass production and vertical stacking ...
Yury Illarionov +3 more
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Voltage regulator for battery power source [PDF]
, 1979 A bipolar transistor in series with the battery as the control element also in series with a zener diode and a resistor is used to maintain a predetermined voltage until the battery voltage decays to very nearly the predetermined voltage.
Black, J. M.
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High-k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors [PDF]
, 2014 Stephan Wirths +13 more
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Sputtered Electrolyte‐Gated Transistor with Modulated Metaplasticity Behaviors
, 2022 Yang Ming Fu +5 more
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Synergic Effect of Misaligned Gate and Temperature on Hetero‐Dielectric Double‐Gate Junctionless Metal–Oxide‐Semiconductor Field‐Effect Transistors for High‐Frequency Application [PDF]
, 2023 Jyotsana Singh, R. K. Chauhan
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Phosphorus diffusion with the help of the solid planar source in the manufacturing of the integrated circuits [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2008 The results of the development and realization of the basic process of the phosphorus diffusion for the formation of the active region of the power silicon transistor have been considered. It is shown that the obtained optimum technological conditions of
B. A. Shangereeva
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Magnetism-Induced Band-Edge Shift as the Mechanism for Magnetoconductance in CrPS4 Transistors
, 2023 Fan Wu +6 more
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Integrating Conjugated Polymers with Bacteriorhodopsin to Realize Quasi Dual‐Gate Organic Field‐Effect Transistors [PDF]
, 2023 P. G. Chen +4 more
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Transistor-Based Synaptic Devices for Neuromorphic Computing
CrystalsCurrently, neuromorphic computing is regarded as the most efficient way to solve the von Neumann bottleneck. Transistor-based devices have been considered suitable for emulating synaptic functions in neuromorphic computing due to their synergistic ...
Wen Huang +4 more
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