Results 101 to 110 of about 679,929 (398)
Heterojunctions combining halide perovskites with low‐dimensional materials enhance optoelectronic devices by enabling precise charge control and improving efficiency, stability, and speed. These synergies advance flexible electronics, wearable sensors, and neuromorphic computing, mimicking biological vision for real‐time image analysis and intelligent
Yu‐Jin Du+11 more
wiley +1 more source
Bipolar Charge Plasma Transistor: A Novel Three Terminal Device
A distinctive approach for forming a lateral Bipolar Charge Plasma Transistor (BCPT) is explored using 2-D simulations. Different metal work-function electrodes are used to induce n- and p-type charge plasma layers on undoped SOI to form the emitter ...
Kumar, M. Jagadesh, Nadda, Kanika
core +1 more source
Engineering Strategies for 2D Layered Tin Halide Perovskite Field‐Effect Transistors
2D halide perovskites are promising candidates for field‐effect transistor (FET) applications due to their high stability and suppressed ion migration in the presence of bulky organic spacers. This review systematically summarizes the optimization engineering strategies of 2D perovskite FETs and future challenges, which provide guidance for developing ...
Shuanglong Wang+4 more
wiley +1 more source
Table 1. Typical performance RF performance at Tcase = 25 �C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp �D ACPR885k ACPR1980k [PDF]
[1] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8- 13). PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz. [2] Measured within 30 kHz bandwidth.
Wimax Power Ldmos Transistor
core
Ternary Transistors With Reconfigurable Polarities
Polarity‐reconfigurable ternary transistors are demonstrated using black phosphorus homojunction with asymmetric contacts and split‐gate structures. Suppression of majority carrier injection, while Fowler–Nordheim tunneling of low‐density minority carriers persists, enables a well‐defined intermediate state with improved on/off ratios.
Dongju Yeom+11 more
wiley +1 more source
Using novel SiO2 surface passivation and ultraviolet (UV) light anneal, a 12 nm thick SnO p-type FET (pFET) shows hole effective mobilities (µeff) of more than 100 cm2/V·s and 31.1 cm2/V·s at hole densities (Qh) of 1 × 1011 and 5 × 1012 cm−2 ...
Kuan-Chieh Chen+3 more
doaj +1 more source
Transistor circuit increases range of logarithmic current amplifier [PDF]
Circuit increases the range of a logarithmic current amplifier by combining a commercially available amplifier with a silicon epitaxial transistor.
Gilmour, G.
core +1 more source
U-shaped bilayer graphene channel transistor with very high Ion/Ioff ratio
A novel graphene transistor architecture is reported. The transistor has a U-shaped geometry and was fabricated using a gallium focused ion beam (FIB). The channel conductance was tuned with a back gate.
Boden, Stuart+4 more
core +1 more source
A two‐step DNA metallization process is presented for the modular assembly of metal sulfide nanoparticles (NPs) on MoS2, with nanoscale control over their separation and ability to concomitantly assemble different kind of NPs. This allowed to tailor the photoinduced electrical response of phototransistors to different wavelengths, according to the ...
Kai Chen+3 more
wiley +1 more source
A tunable, dual mode field-effect or single electron transistor
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology.
B. Previtali+9 more
core +1 more source