Results 101 to 110 of about 335,727 (374)
Advanced Functional Materials, EarlyView.Novel ferrocene derivatives (e.g., FcPhc2) are used as an ultrathin layer hole‐blocking layer, reducing hole injection from the Ag contact. This results in an ultralow noise spectral density of 1.2 × 10−14 A Hz−1/2, and a high specific detectivity of 8.1 × 1012 Jones at −0.5 V.
Eunyoung Hong +16 more
wiley +1 more source
Table 1. Typical performance RF performance at Tcase = 25 �C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp �D ACPR885k ACPR1980k [PDF]
[1] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8- 13). PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz. [2] Measured within 30 kHz bandwidth.
Wimax Power Ldmos Transistor
core
Module failure isolation circuit for paralleled inverters [PDF]
, 1979 A module failure isolation circuit is described which senses and averages the collector current of each paralled inverter power transistor and compares the collector current of each power transistor the average collector current of all power transistors ...
Nagano, S.
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A tunable, dual mode field-effect or single electron transistor
, 2012 A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology.
B. Previtali +9 more
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Advanced Functional Materials, EarlyView.Heterojunctions combining halide perovskites with low‐dimensional materials enhance optoelectronic devices by enabling precise charge control and improving efficiency, stability, and speed. These synergies advance flexible electronics, wearable sensors, and neuromorphic computing, mimicking biological vision for real‐time image analysis and intelligent
Yu‐Jin Du +11 more
wiley +1 more source
Надежность и качество сложных систем, 2022 Background. According to electronics failure analysis, 90 % of failures occur in a very limited number of failed component types. Possible causes of failures of these types of components are easy to analyze.
M.L. Savin +4 more
doaj +1 more source
Parametrization of the radiation induced leakage current increase of NMOS transistors [PDF]
, 2016 The increase of the leakage current of NMOS transistors during exposure to ionizing radiation is known and well studied. Radiation hardness by design techniques have been developed to mitigate this effect and have been successfully used. More recent developments in smaller feature size technologies do not make use of these techniques due to their ...
arxiv +1 more source
Multiple Functionality in Nanotube Transistors
, 2002 Calculations of quantum transport in a carbon nanotube transistor show that such a device offers unique functionality. It can operate as a ballistic field-effect transistor, with excellent characteristics even when scaled to 10 nm dimensions.
A. Odintsov +21 more
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Ternary Transistors With Reconfigurable Polarities
Advanced Functional Materials, EarlyView.Polarity‐reconfigurable ternary transistors are demonstrated using black phosphorus homojunction with asymmetric contacts and split‐gate structures. Suppression of majority carrier injection, while Fowler–Nordheim tunneling of low‐density minority carriers persists, enables a well‐defined intermediate state with improved on/off ratios.
Dongju Yeom +11 more
wiley +1 more source
Impact of UV annealing on the hole effective mobility in SnO pFET
Scientific ReportsUsing ultraviolet (UV) annealing through wide energy bandgap HfO2/SiO2 gate dielectric, nanosheet SnO pFET achieved hole effective mobility (µeff) from 55 cm2/V-s at low hole density (Qh) to 13.38 cm2/V-s at 5 × 1012 cm-2 Qh, compared to that of 9.03 cm2/
Shi-Hao Zeng +3 more
doaj +1 more source