Results 101 to 110 of about 149,459 (248)

Self-aligned gate dielectric in carbon nanotube field-effect transistors by anodic oxidation of aluminium [PDF]

, 2011
Jeff Tsung‐Hui Tsai, Wei-Syun Wang, Szu-Hung Chen, Chia‐Liang Sun   +3 more
openalex   +1 more source

Metal contacts in carbon nanotube field effect transistors: Beyond the Schottky barrier paradigm

, 2007
J. J. Palacios, P. Tarakeshwar, Dae M. Kim   +2 more
openalex   +1 more source

An Analog Neural Network Computing Engine using CMOS-Compatible Charge-Trap-Transistor (CTT) [PDF]

, 2017
Yuan Du, Li Du, Xuefeng Gu, Jieqiong Du, Xinxia WANG, Boyu Hu, Mingzhe Jiang, Xiaoliang Chen, Junjie Su, Subramanian S. Iyer, Mau-Chung Frank Chang   +10 more
openalex   +1 more source

Experimental data of "High-field 1/f noise in hBN-encapsulated graphene transistors"

, 2023
A. Schmitt, D. Mele, Michaël Rosticher, Takashi Taniguchi, Kenji Watanabe, Camille Maestre, Catherine Journet, Vincent Garnier, Gwendal Fève, Jean‐Marc Berroir, Christophe Voisin, Bernard Plaçais, Emmanuel Baudin   +12 more
openalex   +2 more sources

Three Dimensional Transistor Design Maintains Moore s Law for Foreseeable Future

, 2013

openalex   +1 more source

Dependence of process damage on GaN channel thickness in AlGaN/GaN high-electron-mobility transistors with back-barrier layers [PDF]

, 2023
Yoshikaze Ito, Seita Tamai, Takuya Hoshi, Takahiro Gotow, Yasuyuki Miyamoto   +4 more
openalex   +1 more source

Single charge transistor based on superconducting nanowire in high impedance environment [PDF]

, 2011
T. T. Hongisto, A. B. Zorin
openalex  

Transistors [PDF]

IRE Transactions on Electron Devices, 1957
  +5 more sources

Enhanced Performance in Graphene Transistors via Interface Engineering

, 2016

openalex   +1 more source

Low-Dimensional Materials for Future Transistors. [PDF]

Nanomicro Lett
Zhang S, Hong Z, Ren M, Zhu L, Wang J.
europepmc   +1 more source