Results 111 to 120 of about 679,929 (398)
High‐Performance Millimeter Scale Electromagnetic Generator
A high‐performance millimeter‐scale electromagnetic generator (mmEMG) is developed using magnetic flux concentrator (MFC) films on both coil ends to enhance magnetic flux. Through simulations and experiments, structural and magnetic properties are optimized, achieving a 5.6‐fold electrical output improvement.
Jin Pyo Lee+5 more
wiley +1 more source
Phosphorus diffusion with the help of the solid planar source in the manufacturing of the integrated circuits [PDF]
The results of the development and realization of the basic process of the phosphorus diffusion for the formation of the active region of the power silicon transistor have been considered. It is shown that the obtained optimum technological conditions of
B. A. Shangereeva
doaj
Module failure isolation circuit for paralleled inverters [PDF]
A module failure isolation circuit is described which senses and averages the collector current of each paralled inverter power transistor and compares the collector current of each power transistor the average collector current of all power transistors ...
Nagano, S.
core +1 more source
Multiple Functionality in Nanotube Transistors
Calculations of quantum transport in a carbon nanotube transistor show that such a device offers unique functionality. It can operate as a ballistic field-effect transistor, with excellent characteristics even when scaled to 10 nm dimensions.
A. Odintsov+21 more
core +1 more source
An environmentally friendly transfer printing method of nm‐thick giant magnetoresistive (GMR) sensors is demonstrated. This method, relying on water and biocompatible polyvinyl alcohol (PVA) polymer without the need of complex treatments, allows transferring thin films to a wide range of biological, organic, and inorganic substrates.
Olha Bezsmertna+7 more
wiley +1 more source
Impact of UV annealing on the hole effective mobility in SnO pFET
Using ultraviolet (UV) annealing through wide energy bandgap HfO2/SiO2 gate dielectric, nanosheet SnO pFET achieved hole effective mobility (µeff) from 55 cm2/V-s at low hole density (Qh) to 13.38 cm2/V-s at 5 × 1012 cm-2 Qh, compared to that of 9.03 cm2/
Shi-Hao Zeng+3 more
doaj +1 more source
The investigation of quality of power-transistor crystals soldering by a transient impedance-spectrometer [PDF]
Differential distribution profiles of the thermal «junction-to-case» resistance of KP723G transistors in accordance with the attachment of the crystals into the package have been investigated.
Turtsevich А. S.+6 more
doaj
Magnon transistor for all-magnon data processing
An attractive direction in next-generation information processing is the development of systems employing particles or quasiparticles other than electrons—ideally with low dissipation—as information carriers.
A. Chumak, A. Serga, B. Hillebrands
semanticscholar +1 more source
A pore tuning strategy to amplify the multi‐site MOF‐SO2 interactions is proposed to achieve an enhanced trace SO2 capture and chemiresistive sensing in highly stable isostructural DMOFs by annelating benzene rings. This work provides a facile strategy to achieve tailor‐made stable MOF materials for specific multifunctional applications.
Shanghua Xing+9 more
wiley +1 more source
The pioneering exfoliation of monolayer tungsten diselenide has greatly inspired researchers toward semiconducting applications. WSe2 belongs to a family of transition‐metal dichalcogenides.
Qilin Cheng+15 more
doaj +1 more source