Results 111 to 120 of about 335,727 (374)

Optical Control of Ferroelectric Imprint in BiFeO3

Advanced Functional Materials, EarlyView.
Above‐bandgap irradiation at room temperature enables on‐demand optical control of defect‐driven built‐in electric fields in BiFeO₃ thin films, fabricated via scalable, chemical spray pyrolysis. These fields, otherwise “frozen‐in,” can cause severe device degradation, including non‐switchable polarization, dead layers near interfaces, and polarization ...
Haoze Zhang, Malur C. Nagashree, Richard F. Webster, Zhipeng Wang, Xiaoran Zheng, Suresh D. Kulkarni, Rajendra B. Venkataramana, Jan Seidel, Pankaj Sharma   +8 more
wiley   +1 more source

STRUCTURAL AND TECHNOLOGICAL PARAMETERS AFFECTING THE BIPOLAR STATIC INDUCTION TRANSISTOR (BSIT ) RESISTANCE

Вестник Дагестанского государственного технического университета: Технические науки, 2016
Aim. The aim of the study is to determine the impact of structural and technological parameters on the resistance of the bipolar static induction transistor.Methods.
T. A. Ismailov, A. R. Shakhmaeva, B. A. Shangereeva   +2 more
doaj   +1 more source

Jig protects transistors from heat while tinning leads [PDF]

, 1966
In tinning transistor leads, an aluminum jig is used to dip the leads into the molten tin. The jigs mass shunts excess heat given off by the molten tin before it reaches and damages the transistor ...
Pelletier, A. J., Willis, G. A.
core   +1 more source

Versatile Green Transfer of Magnetoelectronics with Loss‐Free Performance and High Adhesion for Interactive Electronics

Advanced Functional Materials, EarlyView.
An environmentally friendly transfer printing method of nm‐thick giant magnetoresistive (GMR) sensors is demonstrated. This method, relying on water and biocompatible polyvinyl alcohol (PVA) polymer without the need of complex treatments, allows transferring thin films to a wide range of biological, organic, and inorganic substrates.
Olha Bezsmertna, Rui Xu, Eduardo Sergio Oliveros Mata, Stanislav Avdoshenko, Clemens Voigt, Sindy Mosch, Mykola Vinnichenko, Denys Makarov   +7 more
wiley   +1 more source

Spin Electronics and Spin Computation

, 2001
We review several proposed spintronic devices that can provide new functionality or improve available functions of electronic devices. In particular, we discuss a high mobility field effect spin transistor, an all-metal spin transistor, and our recent ...
Andreev, Awschalom, Bacon, Balents, Barnes, Belzig, Bennett, Blonder, Burkard, Das Sarma, Datta, de Jong, Deutsch, Deutsch, DiVincenzo, DiVincenzo, DiVincenzo, DiVincenzo, DiVincenzo, DiVincenzo, Dong, Ekert, Feynman, Feynman, Fiederling, Goldman, Hammar, Hu, Hu, Igor Z̆utić, Imamoglu, Imamoglu, Jaroslav Fabian, Johnson, Johnson, Kane, Kane, Kane, Kashiwaya, Kikkawa, Kikkawa, Kikkawa, Kulić, Lidar, Loss, Medvedkin, Meier, Monsma, Monsma, Nitta, Oestreich, Ohno, Ohno, Pellizzari, Prinz, Privman, S. Das Sarma, Schmidt, Shor, Shor, Soulen, Steane, Steane, Tedrow, Tsukagoshi, Upadhyay, Va'sko, van Son, Vrijen, Wolf, Worledge, Xuedong Hu, Yamaguchi, Zhu, Z̆utić, Z̆utić, Z̆utić   +76 more
core   +2 more sources

Rational Fine‐Tuning of MOF Pore Metrics: Enhanced SO2 Capture and Sensing with Optimal Multi‐Site Interactions

Advanced Functional Materials, EarlyView.
A pore tuning strategy to amplify the multi‐site MOF‐SO2 interactions is proposed to achieve an enhanced trace SO2 capture and chemiresistive sensing in highly stable isostructural DMOFs by annelating benzene rings. This work provides a facile strategy to achieve tailor‐made stable MOF materials for specific multifunctional applications.
Shanghua Xing, Abdulrahman Mohabbat, István Boldog, Jens Möllmer, Marcus Lange, Yulyan Haiduk, Tobias Heinen, Vladimir Pankov, Oliver Weingart, Christoph Janiak   +9 more
wiley   +1 more source

High-Performance One-Dimensional Sub-5 nm Transistors Based on Poly(p-phenylene ethynylene) Molecular Wires

Molecules
Poly(p-phenylene ethynylene) (PPE) molecular wires are one-dimensional materials with distinctive properties and can be applied in electronic devices.
Zhilin Chen, Xingyi Tan, Qiang Li, Jing Wan, Gang Xu   +4 more
doaj   +1 more source

Papan Pergantian Pemain Sepak Bola Berbasis Digital Menggunakan IC4072 dan IC7447

Rekayasa, 2018
Semua rangkaian elektronika pada umumnya menggunakan komponen tabung hampa (vaccum tube) atau komponen diskrit seperti dioda dan transistor. Terkait dengan perkembangan teknologi dalam bidang elektronika, baik rangkaian maupun komponen mengalami ...
Teguh Arifianto
doaj   +1 more source

Transistor as a Rectifier [PDF]

arXiv, 2012
Transistor is a three terminal semiconductor device normally used as an amplifier or as a switch. Here the alternating current (a.c) rectifying property of the transistor is considered. The ordinary silicon diode exhibits a voltage drop of ~0.6V across its terminals.
arxiv  

Deterministic Writing of Field‐Free and Unipolar Spin‐Transfer Torque Magnetic Random‐Access Memory

Advanced Functional Materials, EarlyView.
Deterministic unipolar‐switching STT‐MRAM with field‐free operation is experimentally demonstrated. The device features a compact 4F2 cell architecture using a diode as the access device and a single magnetic tunneling junction. Unlike conventional bipolar switching STT‐MRAM requiring a three‐terminal access transistor in the array, this design offers ...
Ming‐Chun Hong, Ching Shih, Guan‐Long Chen, Yu‐Chen Hsin, Chen‐Yu Yang, Hsin‐Han Lee, Kuan‐Ming Chen, Yu‐Ho Kao, Tsai‐Yu Wu, Chiao‐Yun Lo, Sin‐You Huang, Cheng‐Yi Shih, Shan‐Yi Yang, I‐Jung Wang, Yao‐Jen Chang, Shih‐Ching Chiu, Yi‐Hui Su, Chih‐Yao Wang, Jeng‐Hua Wei, Shyh‐Shyuan Sheu, Wei‐Chung Lo, Shih‐Chieh Chang, Tuo‐Hung Hou   +22 more
wiley   +1 more source