Results 11 to 20 of about 686,107 (395)

Recent advanced applications of ion-gel in ionic-gated transistor

open access: yesnpj Flexible Electronics, 2021
Diversified regulation of electrons have received much attention to realize a multi-functional transistor, and it is crucial to have a considerable control over the charge carriers in transistors.
Depeng Wang   +5 more
semanticscholar   +1 more source

Investigation of Limitations in the Detection of Antibody + Antigen Complexes Using the Silicon-on-Insulator Field-Effect Transistor Biosensor

open access: yesSensors, 2023
The SOI-FET biosensor (silicon-on-insulator field-effect transistor) for virus detection is a promising device in the fields of medicine, virology, biotechnology, and the environment.
Vladimir Generalov   +5 more
doaj   +1 more source

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures [PDF]

open access: yesScience, 2011
Tunnel Barriers for Graphene Transistors Transistor operation for integrated circuits not only requires that the gate material has high-charge carrier mobility, but that there is also an effective way of creating a barrier to current flow so that the ...
L. Britnell   +14 more
semanticscholar   +1 more source

Analysis and research of methods of linearization of the transfer function of precision semiconductor temperature sensors

open access: yesФізика і хімія твердого тіла, 2020
The analysis of the nonlinearity of the transfer function of primary temperature transducers based on transistor structures has been performed. It’s shown that the quadratic component of the transfer function creates a significant nonlinearity error up ...
O. V. Boyko, Z. Y. Hotra
doaj   +1 more source

On-Chip Integration of a Plasmonic FET Source and a Nano-Patch Antenna for Efficient Terahertz Wave Radiation

open access: yesNanomaterials, 2023
Graphene-based Field-Effect Transistors (FETs) integrated with microstrip patch antennas offer a promising approach for terahertz signal radiation. In this study, a dual-stage simulation methodology is employed to comprehensively investigate the device’s
Justin Crabb   +3 more
doaj   +1 more source

Natural Organic Materials Based Memristors and Transistors for Artificial Synaptic Devices in Sustainable Neuromorphic Computing Systems

open access: yesMicromachines, 2023
Natural organic materials such as protein and carbohydrates are abundant in nature, renewable, and biodegradable, desirable for the construction of artificial synaptic devices for emerging neuromorphic computing systems with energy efficient operation ...
Md Mehedi Hasan Tanim   +2 more
doaj   +1 more source

Pemanfaatan Chip Sel Surya Dari Bahan Limbah Transistor Kemasan TO–3 Untuk Pembuatan Tahap Awal Prototipe Pembangkitan Energi Listrik Tenaga Surya

open access: yesJurnal Andalas, 2023
Pembangkit listrik tenaga surya merupakan suatu pembangkit listrik yang mengkonversikan energi cahaya matahari menjadi energi listrik. Dimana dalam hal ini solar cell merupakan komponen terpenting dalam pengkonversian energi surya menjadi energi listrik.
Nofri Dodi
doaj   +1 more source

Enseñanza del transistor BJT como amplificador utilizando herramientas tecnológicas digitales para la experimentación

open access: yesMundo Fesc, 2021
This research characterizes the teaching style of instructors and the learning style of students in the Electronic Engineering Program at Francisco de Paula Santander University.
Oriana Alexandra López Bustamante   +2 more
doaj   +1 more source

Flexible high energy density zinc-ion batteries enabled by binder-free MnO2/reduced graphene oxide electrode

open access: yesnpj Flexible Electronics, 2018
Zinc-ion batteries: a carbon based promoter Simple carbon materials are shown to modify the MnO2 electrodes and greatly enhance the capacity and cyclability for zinc-ion batteries.
Yuan Huang   +11 more
doaj   +1 more source

Characteristics of Gate-All-Around Junctionless Polysilicon Nanowire Transistors With Twin 20-nm Gates

open access: yesIEEE Journal of the Electron Devices Society, 2015
A high performance gate-all-around (GAA) junctionless (JL) polycrystalline silicon nanowire (poly-Si NW) transistor with channel width of 12 nm, channel thickness of 45 nm, and gate length of 20 nm has been successfully demonstrated, based on a ...
Tung-Yu Liu   +2 more
doaj   +1 more source

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