Results 21 to 30 of about 686,107 (395)
Digital Detection of Oxide Breakdown and Life-Time Extension in Submicron CMOS Technology [PDF]
, 2008 An approach is introduced to extend the lifetime of high-voltage analog circuits in CMOS technologies based on redundancy, like that known for DRAMS. A large power transistor is segmented into N smaller ones in parallel. If a sub-transistor is broken, it
Acar, M., Annema, A.-J., Nauta, B.
core +3 more sources
A one-transistor-synapse strategy for electrically-programmable massively-parallel analog array processors [PDF]
, 1997 This paper presents a linear, four-quadrants, electrically-programmable, one-transistor synapse strategy applicable to the implementation of general massively-parallel analog processors in CMOS technology.
Carmona Galán, Ricardo +3 more
core +1 more source
An electrochemical thermal transistor [PDF]
Nature Communications, 2018 AbstractThe ability to actively regulate heat flow at the nanoscale could be a game changer for applications in thermal management and energy harvesting. Such a breakthrough could also enable the control of heat flow using thermal circuits, in a manner analogous to electronic circuits. Here we demonstrate switchable thermal transistors with an order of
Feng Xiong +16 more
openaire +7 more sources
The Analysis Of Accuracy Of Selected Methods Of Measuring The Thermal Resistance Of IGBTs
Metrology and Measurement Systems, 2015 In the paper selected methods of measuring the thermal resistance of an IGBT (Insulated Gate Bipolar Transistor) are presented and the accuracy of these methods is analysed.
Górecki Krzysztof, Górecki Paweł
doaj +1 more source
Lead iodide perovskite light-emitting field-effect transistor [PDF]
Nature Communications, 2015 Despite the widespread use of solution-processable hybrid organic–inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film ...
X. Chin +4 more
semanticscholar +1 more source
Coulomb blockade in a Si channel gated by an Al single-electron transistor
, 2007 We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance associated ...
Brown, K. R., Kane, B. E., Sun, L.
core +1 more source
Multiple facets of tightly coupled transducer-transistor structures [PDF]
, 2015 The ever increasing demand for data processing requires different paradigms for electronics. Excellent performance capabilities such as low power and high speed in electronics can be attained through several factors including using functional materials ...
Dahiya, Ravinder, Heidari, Hadi
core +1 more source
A single-photon switch and transistor enabled by a solid-state quantum memory [PDF]
Science, 2018 A single-photon gate A long-standing goal in optics is to produce a solid-state alloptical transistor, in which the transmission of light can be controlled by a single photon that acts as a gate or switch. Sun et al.
Shuo Sun +4 more
semanticscholar +1 more source
Micro, 2023 The high breakdown electric field, n-type doping capability, availability of high-quality substrates, and high Baliga’s figure of merit of Ga2O3 demonstrate its potential as a next-generation power semiconductor material.
Hee-Jae Lee +9 more
doaj +1 more source
Science Advances, 2019 Internal ions enable high transconductance, fast speed, and independently controllable transistors for bioelectronics. Real-time processing and manipulation of biological signals require bioelectronic devices with integrated components capable of signal ...
George D. Spyropoulos +2 more
semanticscholar +1 more source