Results 21 to 30 of about 369,729 (357)
An electrochemical thermal transistor [PDF]
Nature Communications, 2018 AbstractThe ability to actively regulate heat flow at the nanoscale could be a game changer for applications in thermal management and energy harvesting. Such a breakthrough could also enable the control of heat flow using thermal circuits, in a manner analogous to electronic circuits. Here we demonstrate switchable thermal transistors with an order of
Feng Xiong +16 more
openaire +7 more sources
Recent Progress in Contact Engineering of Field-Effect Transistor Based on Two-Dimensional Materials
Nanomaterials, 2022 Two-dimensional (2D) semiconductors have been considered as promising candidates to fabricate ultimately scaled field-effect transistors (FETs), due to the atomically thin thickness and high carrier mobility.
Jialei Miao +3 more
doaj +1 more source
Seeding-Layer-Free Deposition of High-k Dielectric on CVD Graphene for Enhanced Gate Control Ability
Crystals, 2022 The gate insulator is one of the most crucial factors determining the performance of a graphene field effect transistor (GFET). Good electrostatic control of the conduction channel by gate voltage requires thin gate oxides.
Yunpeng Yan +4 more
doaj +1 more source
East European Journal of Physics, 2020 The study aimed at enhancement and optimisation of SnS conductivity via annealing for field effect transistor’s semiconductor channel layer application. Interstitials and vacancies in SnS films are known to cause carrier traps which limit charge carriers
Thomas Daniel +3 more
doaj +1 more source
Micro, 2023 The high breakdown electric field, n-type doping capability, availability of high-quality substrates, and high Baliga’s figure of merit of Ga2O3 demonstrate its potential as a next-generation power semiconductor material.
Hee-Jae Lee +9 more
doaj +1 more source
Digital Detection of Oxide Breakdown and Life-Time Extension in Submicron CMOS Technology [PDF]
, 2008 An approach is introduced to extend the lifetime of high-voltage analog circuits in CMOS technologies based on redundancy, like that known for DRAMS. A large power transistor is segmented into N smaller ones in parallel. If a sub-transistor is broken, it
Acar, M., Annema, A.-J., Nauta, B.
core +3 more sources
Controlling Nanostructure in Inkjet Printed Organic Transistors for Pressure Sensing Applications
Nanomaterials, 2021 This work reports the development of a highly sensitive pressure detector prepared by inkjet printing of electroactive organic semiconducting materials. The pressure sensing is achieved by incorporating a quantum tunnelling composite material composed of
Matthew J. Griffith +6 more
doaj +1 more source
Chemosensors, 2023 A carbon dot-functionalized solution-gated graphene transistor (CD-SGGT) was designed and prepared via the modification of CDs on the gate of SGGT. The above CDs were hydrothermally synthesized using DL-thioctic acid and triethylenetramine as C, N and S ...
Zhanpeng Ren +9 more
doaj +1 more source
Coulomb blockade in a Si channel gated by an Al single-electron transistor
, 2007 We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance associated ...
Brown, K. R., Kane, B. E., Sun, L.
core +1 more source
Optical Transistor for an Amplification of Radiation in a Broadband THz Domain [PDF]
, 2020 We propose a new type of optical transistor for a broadband amplification of THz radiation. It is made of a graphene--superconductor hybrid, where electrons and Cooper pairs couple by Coulomb forces. The transistor operates via the propagation of surface
Kusmartsev, Fedor V. +3 more
core +3 more sources