Results 21 to 30 of about 146,638 (191)
Recent Progress in Contact Engineering of Field-Effect Transistor Based on Two-Dimensional Materials
Nanomaterials, 2022 Two-dimensional (2D) semiconductors have been considered as promising candidates to fabricate ultimately scaled field-effect transistors (FETs), due to the atomically thin thickness and high carrier mobility.
Jialei Miao +3 more
doaj +1 more source
Seeding-Layer-Free Deposition of High-k Dielectric on CVD Graphene for Enhanced Gate Control Ability
Crystals, 2022 The gate insulator is one of the most crucial factors determining the performance of a graphene field effect transistor (GFET). Good electrostatic control of the conduction channel by gate voltage requires thin gate oxides.
Yunpeng Yan +4 more
doaj +1 more source
Performance of a spin-based insulated gate field effect transistor [PDF]
Appl. Phys. Lett. 88, 162503 (2006)., 2006 Fundamental physical properties limiting the performance of spin field effect transistors are compared to those of ordinary (charge-based) field effect transistors. Instead of raising and lowering a barrier to current flow these spin transistors use static spin-selective barriers and gate control of spin relaxation.
arxiv +1 more source
Quantum thermal transistors: Operation characteristics in steady state versus transient regimes [PDF]
Phys. Rev. A 103, 052613 (2021), 2020 We show that a quantum thermal transistor can also cause the transistor effect - where one out of three terminals can control the flow of heat current in the other two - with good amplification properties in the transient regime for certain paradigmatic initial states.
arxiv +1 more source
East European Journal of Physics, 2020 The study aimed at enhancement and optimisation of SnS conductivity via annealing for field effect transistor’s semiconductor channel layer application. Interstitials and vacancies in SnS films are known to cause carrier traps which limit charge carriers
Thomas Daniel +3 more
doaj +1 more source
Micro, 2023 The high breakdown electric field, n-type doping capability, availability of high-quality substrates, and high Baliga’s figure of merit of Ga2O3 demonstrate its potential as a next-generation power semiconductor material.
Hee-Jae Lee +9 more
doaj +1 more source
2D Ambipolar Vertical Transistors as Control-free Reconfigurable Logic Devices [PDF]
arXiv, 2023 As transistor footprint scales down to sub-10 nm regime, the process development for advancing to further technology nodes has encountered slowdowns. Achieving greater functionality within a single chip requires concurrent development at the device, circuit, and system levels.
arxiv
Magnetic bipolar transistor [PDF]
Appl. Phys. Lett. 84, 85 (2004), 2003 A magnetic bipolar transistor is a bipolar junction transistor with one or more magnetic regions, and/or with an externally injected nonequilibrium (source) spin. It is shown that electrical spin injection through the transistor is possible in the forward active regime.
arxiv +1 more source
Controlling Nanostructure in Inkjet Printed Organic Transistors for Pressure Sensing Applications
Nanomaterials, 2021 This work reports the development of a highly sensitive pressure detector prepared by inkjet printing of electroactive organic semiconducting materials. The pressure sensing is achieved by incorporating a quantum tunnelling composite material composed of
Matthew J. Griffith +6 more
doaj +1 more source
Chemosensors, 2023 A carbon dot-functionalized solution-gated graphene transistor (CD-SGGT) was designed and prepared via the modification of CDs on the gate of SGGT. The above CDs were hydrothermally synthesized using DL-thioctic acid and triethylenetramine as C, N and S ...
Zhanpeng Ren +9 more
doaj +1 more source