Results 31 to 40 of about 368,201 (304)
Nano‐Patterned CuO Nanowire Nanogap Hydrogen Gas Sensor with Voids
Advanced Functional Materials, Volume 35, Issue 12, March 18, 2025.Sub‐5‐ppb hydrogen (H2) detection and sub‐10‐s response and recovery times are achieved based on nano‐patterned polycrystalline CuO nanowires nanogap gas sensors with voids using electron‐beam lithography and unique annealing processes. Pre‐H2 annealing, void‐generating oxidation, and downscaled nanogap electrodes are key to improving the sensing ...
Muqing Zhao +4 more
wiley +1 more source
Advanced Functional Materials, EarlyView.A lack of standard approaches for testing and reporting the performance of metal halide perovskites and organic semiconductor radiation detectors has resulted in inconsistent interpretation of performance parameters, impeding progress in the field. This Perspective recommends key metrics and experimental details, which are suggested for reporting in ...
Jessie A. Posar +8 more
wiley +1 more source
Advanced Functional Materials, EarlyView.This work discusses the use of blended channel materials in OECTs. It explores how mixing glycolated and alkoxylated polymers in various ratios offers a simpler and more efficient route to tuning OECT properties. The performance of the polymer blends is compared to the corresponding copolymers, demonstrating similar OECT characteristics, swelling ...
Lize Bynens +14 more
wiley +1 more source
Improved chopper circuit uses parallel transistors [PDF]
, 1966 Parallel transistor chopper circuit operates with one transistor in the forward mode and the other in the inverse mode. By using this method, it acts as a single, symmetrical, bidirectional transistor, and reduces and stabilizes the offset ...
core +1 more source
Negative differential thermal resistance and thermal transistor [PDF]
, 2006 We report on the first model of a thermal transistor to control heat flow. Like its electronic counterpart, our thermal transistor is a three-terminal device with the important feature that the current through the two terminals can be controlled by small
Baowen Li +3 more
core +2 more sources
Advanced Functional Materials, EarlyView.Novel ferrocene derivatives (e.g., FcPhc2) are used as an ultrathin layer hole‐blocking layer, reducing hole injection from the Ag contact. This results in an ultralow noise spectral density of 1.2 × 10−14 A Hz−1/2, and a high specific detectivity of 8.1 × 1012 Jones at −0.5 V.
Eunyoung Hong +16 more
wiley +1 more source
On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field [PDF]
, 2019 The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals.
Bauch, Thilo +6 more
core +2 more sources
Advanced Functional Materials, EarlyView.The THz drive of the Mott insulating state of a rare‐earth nickelate induces instantaneous insulator‐metal transition via quantum tunneling of valence electrons across the bandgap. This transition is pure electronic and highly non‐thermal, which may find its applications in ultrafast opto‐electronics with enhanced performance and minimal device size ...
Gulloo Lal Prajapati +7 more
wiley +1 more source
Технологія та конструювання в електронній апаратурі, 2011 The research has been carried out on dependence of mechanical stress on the modes of deposition of silicon nitride and oxide films obtained by plasma excited chemical vapour deposition of the layers from the gas phase (PECVD).
I. I. Rubtsevich +4 more
doaj
An algorithm for transistor sizing in CMOS circuits [PDF]
, 1989 This paper describes a novel algorithm for automatic transistor sizing which is one technique for improving timing performance in CMOS circuits. The sizing algorithm is used to minimize area and power subject to timing constraints.
Gajski, Daniel +2 more
core