Results 31 to 40 of about 335,727 (374)
The high breakdown electric field, n-type doping capability, availability of high-quality substrates, and high Baliga’s figure of merit of Ga2O3 demonstrate its potential as a next-generation power semiconductor material.
Hee-Jae Lee+9 more
doaj +1 more source
Performance of a spin-based insulated gate field effect transistor [PDF]
Fundamental physical properties limiting the performance of spin field effect transistors are compared to those of ordinary (charge-based) field effect transistors. Instead of raising and lowering a barrier to current flow these spin transistors use static spin-selective barriers and gate control of spin relaxation.
arxiv +1 more source
Quantum thermal transistors: Operation characteristics in steady state versus transient regimes [PDF]
We show that a quantum thermal transistor can also cause the transistor effect - where one out of three terminals can control the flow of heat current in the other two - with good amplification properties in the transient regime for certain paradigmatic initial states.
arxiv +1 more source
Controlling Nanostructure in Inkjet Printed Organic Transistors for Pressure Sensing Applications
This work reports the development of a highly sensitive pressure detector prepared by inkjet printing of electroactive organic semiconducting materials. The pressure sensing is achieved by incorporating a quantum tunnelling composite material composed of
Matthew J. Griffith+6 more
doaj +1 more source
Digital Detection of Oxide Breakdown and Life-Time Extension in Submicron CMOS Technology [PDF]
An approach is introduced to extend the lifetime of high-voltage analog circuits in CMOS technologies based on redundancy, like that known for DRAMS. A large power transistor is segmented into N smaller ones in parallel. If a sub-transistor is broken, it
Acar, M., Annema, A.-J., Nauta, B.
core +3 more sources
Organic electrochemical transistors [PDF]
Organic electrochemical transistors (OECTs) leverage ion injection from an electrolyte into an organic semiconductor film to yield compelling advances in biological interfacing, printed logic circuitry and neuromorphic devices. Their defining characteristic is the coupling between electronic and ionic charges within the volume of an organic film.
Rivnay, Jonathan+5 more
openaire +2 more sources
A carbon dot-functionalized solution-gated graphene transistor (CD-SGGT) was designed and prepared via the modification of CDs on the gate of SGGT. The above CDs were hydrothermally synthesized using DL-thioctic acid and triethylenetramine as C, N and S ...
Zhanpeng Ren+9 more
doaj +1 more source
2D Ambipolar Vertical Transistors as Control-free Reconfigurable Logic Devices [PDF]
As transistor footprint scales down to sub-10 nm regime, the process development for advancing to further technology nodes has encountered slowdowns. Achieving greater functionality within a single chip requires concurrent development at the device, circuit, and system levels.
arxiv
Organic dye semiconductors have received increasing attention as the next generation of semiconductors, and one of their potential applications is as a core component of organic transistors.
Shiwei Ren+6 more
doaj +1 more source
This study discusses the automated visual inspection of electronic boards used in the mass production of power electronics equipment. Soldering splashes, produced during the necessary manufacturing stages, can affect the hybrid power semiconductor ...
Dušan Koniar+5 more
doaj +1 more source