Results 41 to 50 of about 149,459 (248)

Low-Dimensional-Materials-Based Flexible Artificial Synapse: Materials, Devices, and Systems

Nanomaterials, 2023
With the rapid development of artificial intelligence and the Internet of Things, there is an explosion of available data for processing and analysis in any domain.
Qifeng Lu, Yinchao Zhao, Long Huang, Jiabao An, Yufan Zheng, Eng Hwa Yap   +5 more
doaj   +1 more source

MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance

Advanced Functional Materials, EarlyView.
Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley   +1 more source

A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation

Nanomaterials, 2023
The effect of the source/drain compressive stress on the mechanical stability of stacked Si nanosheets (NS) during the process of channel release has been investigated.
Xin Sun, Dawei Wang, Lewen Qian, Tao Liu, Jingwen Yang, Kun Chen, Luyu Wang, Ziqiang Huang, Min Xu, Chen Wang, Chunlei Wu, Saisheng Xu, David Wei Zhang   +12 more
doaj   +1 more source

Injection transistor-transistor logic (i.t.t.l.)

Electronics Letters, 1979
A new circuit is described that comprises a lateral-multiemitter vertical transistor structure and an inverter transistor. The circuit acts as an injection transistor-transistor logic (i.t.t.l.).
openaire   +1 more source

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source

Selection Strategies for Flexible Pressure Sensor Electrode Materials Toward Ultrafast Response

Advanced Functional Materials, EarlyView.
This study reveals, for the first time, how the electrode–organic interface governs the temporal performance of flexible pressure sensors. By pairing high‐conductivity CVD PEDOT with commonly used metal electrodes, the authors demonstrate that interfacial energy alignment dictates microsecond‐scale response, providing a straightforward design strategy ...
Jinwook Baek, Yuxuan Zhang, Hyeondong Yang, Minyoung Kim, Pavlos P. Vlachos, Jeongok Choe, Bo‐Gyu Bok, Kejie Zhao, Han‐Wook Song, Min‐Seok Kim, Martin Byung‐Guk Jun, Sunghwan Lee   +11 more
wiley   +1 more source

Analysis and research of methods of linearization of the transfer function of precision semiconductor temperature sensors

Фізика і хімія твердого тіла, 2020
The analysis of the nonlinearity of the transfer function of primary temperature transducers based on transistor structures has been performed. It’s shown that the quadratic component of the transfer function creates a significant nonlinearity error up ...
O. V. Boyko, Z. Y. Hotra
doaj   +1 more source

Structure–Transport–Ion Retention Coupling for Enhanced Nonvolatile Artificial Synapses

Advanced Functional Materials, EarlyView.
Nitrogen incorporation into the conjugated backbone of donor–acceptor polymers enables efficient charge transfer and deep ion embedding in organic electrochemical synaptic transistors (OESTs). This molecular‐level design enhances non‐volatile synaptic properties, providing a new strategy for developing high‐performance and reliable neuromorphic devices.
Donghwa Lee, Jinsung Kim, Sein Chung, Junho Sung, Chaeyeon Han, Eunho Lee   +5 more
wiley   +1 more source

Rational Device Design and Doping‐Controlled Performance in Fast‐Response π‐Ion Gel Transistors

Advanced Functional Materials, EarlyView.
π‐Ion gel transistors (PIGTs) achieve extraordinary transconductance and stability through device configuration optimization, high‐mobility conjugated polymer selection, and hole scavenger doping. The optimized PIGTs maintain performance on flexible substrates, enabling printed, fast‐response, and wearable electronics.
Masato Kato, Soh Kushida, Nafees Umar Draz, Dan Kyotani, Emanuel Smarsly, Kyota Yoshinaga, Wenhao He, Uwe H. F. Bunz, Kazuhiro Marumoto, Tatsuya Mori, Yohei Yamamoto   +10 more
wiley   +1 more source

The optimization of design of the membrane sensor

Технологія та конструювання в електронній апаратурі, 2009
The possibility of reducing the power consumed by the gas concentration sensor through the introduction of cracks in the structure of the multi-layered membrane has been considered.
I. I. Rubcevich, V. B. Wysotsky, N. S. Kovalchuk   +2 more
doaj