Results 41 to 50 of about 146,638 (191)
Analytical model of nanowire FETs in a partially ballistic or dissipative transport regime [PDF]
IEEE Trans. El. Dev. 56 (7), 1402 (2009), 2008 The intermediate transport regime in nanoscale transistors between the fully ballistic case and the quasi equilibrium case described by the drift-diffusion model is still an open modeling issue. Analytical approaches to the problem have been proposed, based on the introduction of a backscattering coefficient, or numerical approaches consisting in the ...
arxiv +1 more source
A Horizontal-Gate Monolayer MoS2 Transistor Based on Image Force Barrier Reduction
Nanomaterials, 2019 Transition metal dichalcogenides (TMDCs) have received wide attention as a new generation of semiconductor materials. However, there are still many problems to be solved, such as low carrier mobility, contact characteristics between metal and two ...
Kun Yang +4 more
doaj +1 more source
High-$κ$ field-effect transistor with copper-phthalocyanine [PDF]
, 2011 The use of SrTiO$_3$ dielectrics as high-permittivity insulator in organic thin film field effect transistors (FET) is evaluated. Field-effect transistors with sputtered SrTiO$_3$ and copper-phthalocyanine (CuPc) as semiconducting layer were fabricated. The device preparation was performed in-situ in an ultra high vacuum chamber system.
arxiv +1 more source
Low-Frequency 1/f Noise in MoS2 Thin-Film Transistors: Comparison of Single and Multilayer Structures [PDF]
IEEE Electron Device Letters, 36, 517 (2015), 2015 We report on the transport and low-frequency noise measurements of MoS2 thin-film transistors with "thin" (2-3 atomic layers) and "thick" (15-18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS2 channels have advantages of the higher electron mobility and lower noise level.
arxiv +1 more source
International Journal of Nanomedicine, 2017 Hyun Woo Son,1,* Minhong Jeun,1,* Jaewon Choi,1,2 Kwan Hyi Lee1,2 1Center for Biomaterials, Biomedical Research Institute, Korea Institute of Science and Technology, Seoul, 2Department of Biomedical Engineering, Korea University of Science and ...
Son HW, Jeun M, Choi J, Lee KH
doaj
Electrically controlled spin-transistor operation in helical magnetic field [PDF]
, 2015 A proposal of electrically controlled spin transistor in helical magnetic field is presented. In the proposed device, the transistor action is driven by the Landau-Zener transitions that lead to a backscattering of spin polarized electrons and switching the transistor into the high-resistance state (off state). The on/off state of the transistor can be
arxiv +1 more source
DEVELOPMENT OF HUMIDITY MEASURER OF CUTTING MATERIALS [PDF]
Biomedicinskaâ Inženeriâ i Èlektronika, 2017 The meter of moisture content of bulk materials is developed, which is characterized by high reliability and relatively low cost. Due to the improvement of the analogue circuit, the average lifespan of the elements of the circuit diagram and the ...
Litvinenko V.M., Andrienko A.O.
doaj +1 more source
Comment on "Control of Spin Precession in a Spin-Injected Field Effect Transistor" [Science, 325, 1515 (2009)] [PDF]
arXiv, 2009 A recently published report in the journal Science claims that the Datta-Das Spin Field Effect Transistor has been demonstrated because an exact agreement was found between the voltage modulation in a fabricated structure and a theoretical equation that supposedly describes the voltage modulation of the Datta-Das Transistor.
arxiv
Gated Conductance of Thin Indium Tin Oxide - The Simplest Transistor [PDF]
arXiv, 2012 Transistors are the fundamental building block of modern electronic devices. So far, all transistors are based on various types of semiconductor junctions. The most common bipolar-junction transistors and metal-oxide-semiconductor field-effect transistors contain p-n junctions to control the current, depending on applied biases across the junctions ...
arxiv
Indirect Thermographic Measurement of the Temperature of a Transistor Die during Pulse Operation
SensorsThis paper presents aspects related to the indirect thermographic measurement of a C2M0280120D transistor in pulse mode. The tested transistor was made on the basis of silicon carbide and is commonly used in many applications.
Arkadiusz Hulewicz +2 more
doaj +1 more source