Results 41 to 50 of about 686,107 (395)

Trends and challenges in VLSI technology scaling towards 100 nm [PDF]

open access: yes, 2002
Summary form only given. Moore's Law drives VLSI technology to continuous increases in transistor densities and higher clock frequencies. This tutorial will review the trends in VLSI technology scaling in the last few years and discuss the challenges ...
Nauta, B.   +3 more
core   +3 more sources

Nano‐Patterned CuO Nanowire Nanogap Hydrogen Gas Sensor with Voids

open access: yesAdvanced Functional Materials, Volume 35, Issue 12, March 18, 2025.
Sub‐5‐ppb hydrogen (H2) detection and sub‐10‐s response and recovery times are achieved based on nano‐patterned polycrystalline CuO nanowires nanogap gas sensors with voids using electron‐beam lithography and unique annealing processes. Pre‐H2 annealing, void‐generating oxidation, and downscaled nanogap electrodes are key to improving the sensing ...
Muqing Zhao   +4 more
wiley   +1 more source

A tunable multi-timescale Indium-Gallium-Zinc-Oxide thin-film transistor neuron towards hybrid solutions for spiking neuromorphic applications

open access: yesCommunications Engineering
Spiking neural network algorithms require fine-tuned neuromorphic hardware to increase their effectiveness. Such hardware, mainly digital, is typically built on mature silicon nodes.
Mauricio Velazquez Lopez   +7 more
doaj   +1 more source

WSe2 2D p‐type semiconductor‐based electronic devices for information technology: Design, preparation, and applications

open access: yesInfoMat, 2020
The pioneering exfoliation of monolayer tungsten diselenide has greatly inspired researchers toward semiconducting applications. WSe2 belongs to a family of transition‐metal dichalcogenides.
Qilin Cheng   +15 more
doaj   +1 more source

Tuning of SnS Thin Film Conductivity on Annealing in an Open Air Environment for Transistor Application

open access: yesEast European Journal of Physics, 2020
The study aimed at enhancement and optimisation of SnS conductivity via annealing for field effect transistor’s semiconductor channel layer application. Interstitials and vacancies in SnS films are known to cause carrier traps which limit charge carriers
Thomas Daniel   +3 more
doaj   +1 more source

Hybrid power semiconductor [PDF]

open access: yes, 1985
The voltage rating of a bipolar transistor may be greatly extended while at the same time reducing its switching time by operating it in conjunction with FETs in a hybrid circuit.
Chen, D. Y.
core   +1 more source

Unique Performance Considerations for Printable Organic Semiconductor and Perovskite Radiation Detectors: Toward Consensus on Best Practice Evaluation

open access: yesAdvanced Functional Materials, EarlyView.
A lack of standard approaches for testing and reporting the performance of metal halide perovskites and organic semiconductor radiation detectors has resulted in inconsistent interpretation of performance parameters, impeding progress in the field. This Perspective recommends key metrics and experimental details, which are suggested for reporting in ...
Jessie A. Posar   +8 more
wiley   +1 more source

Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor [PDF]

open access: yes, 2017
Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3 ...
S. Krishnamoorthy   +10 more
semanticscholar   +1 more source

Improved chopper circuit uses parallel transistors [PDF]

open access: yes, 1966
Parallel transistor chopper circuit operates with one transistor in the forward mode and the other in the inverse mode. By using this method, it acts as a single, symmetrical, bidirectional transistor, and reduces and stabilizes the offset ...

core   +1 more source

Ferrocene Derivatives Enable Ultrasensitive Perovskite Photodetectors with Enhanced Reverse Bias Stability

open access: yesAdvanced Functional Materials, EarlyView.
Novel ferrocene derivatives (e.g., FcPhc2) are used as an ultrathin layer hole‐blocking layer, reducing hole injection from the Ag contact. This results in an ultralow noise spectral density of 1.2 × 10−14 A Hz−1/2, and a high specific detectivity of 8.1 × 1012 Jones at −0.5 V.
Eunyoung Hong   +16 more
wiley   +1 more source

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