Results 51 to 60 of about 149,459 (248)
Ferroelectricity in thin HfO2‐based films offers great possibilities for next‐generation neuromorphic memory devices. There, the response to subcoercive voltage signals is driven by the movement of mobile interfaces and their interaction with crystal defects – a yet rather unexplored aspect, which we shed light on and gain new insights into the complex
Maximilian T. Becker +11 more
wiley +1 more source
Charge Transport in Ternary Charge‐Transfer Solid Solution Single Crystals
This study deconvolutes the roles of indirect (superexchange) and direct electronic coupling on charge transport in single crystals of an organic charge‐transfer molecular semiconductor (OSC). This model system elegantly demonstrates that structural defects introduced by chemical dopants play a significant role in the electronic performance ...
Jonathan C. Novak +7 more
wiley +1 more source
Phosphorus diffusion with the help of the solid planar source in the manufacturing of the integrated circuits [PDF]
The results of the development and realization of the basic process of the phosphorus diffusion for the formation of the active region of the power silicon transistor have been considered. It is shown that the obtained optimum technological conditions of
B. A. Shangereeva
doaj
Anion‐excessive gel‐based organic synaptic transistors (AEG‐OSTs) that can maintain electrical neutrality are developed to enhance synaptic plasticity and multistate retention. Key improvement is attributed to the maintenance of electrical neutrality in the electrolyte even after electrochemical doping, which reduces the Coulombic force acting on ...
Yousang Won +3 more
wiley +1 more source
FUNCTIONALLY INTEGRATED DEVICE FOR TEMPERATURE MEASUREMENT
The article presents a method of implementing a functionally integrated device for temperature measurement, which allows for controlled heating of the primary temperature transducer, measurement of the heating temperature as well as the temperature and ...
Les Hotra +5 more
doaj +1 more source
Surface Diffusion in SnTe‐PbTe Monolayer Lateral Heterostructures
The lateral heterostructures between 2D materials often suffer from the interdiffusion at the interfaces. Here, a surface diffusion mechanism is found to be dominating at the interfaces between semiconducting SnTe and PbTe monolayers. Atomically sharp interfaces can be achieved by suppressing this diffusion process. ABSTRACT The construction of complex
Jing‐Rong Ji +9 more
wiley +1 more source
A novel approach for the design of functional semiconductors is presented, which utilizes the excellent optoelectronic properties of layered hybrid perovskites and the possibility to introduce a molecular photoswitch as the organic spacer. This concept is successfully demonstrated on a coumarin‐based system with the possibility to change the bandgap ...
Oliver Treske +4 more
wiley +1 more source
Organic electrochemical transistors based on a Near‐Infrared (NIR)‐responsive polymer p(C4DPP‐T) and iodide electrolyte exhibit optically programmable negative differential transconductance. NIR illumination triggers an iodine‐mediated redox process, enabling a transition from binary to ternary conductance states within a single‐layer device.
Debdatta Panigrahi +7 more
wiley +1 more source
Fluoroalkyl‐functionalized tin–oxo nanoclusters (N‐TOC6) enable robust pattern formation through ligand crosslinking under EUV exposure without thermal processing. Sn–F coordination mitigates the Lewis acidity of Sn centers, suppressing reactions with airborne molecules and improving post‐exposure pattern stability.
Yejin Ku +18 more
wiley +1 more source
Asymmetric Contact Engineering for Bottleneck‐Free Transport in 2D MoS2 Field‐Effect Transistor
Performance of 2D semiconductor transistors is limited by carrier transport bottlenecks arising from specific device geometries. By identifying this structural limitation, a bottleneck‐free asymmetric transistor architecture (BATA) is introduced to improve carrier transport.
Jinhyeok Pyo +10 more
wiley +1 more source

