Results 51 to 60 of about 686,107 (395)
Communications, 2023 This study discusses the automated visual inspection of electronic boards used in the mass production of power electronics equipment. Soldering splashes, produced during the necessary manufacturing stages, can affect the hybrid power semiconductor ...
Dušan Koniar +5 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Phosphorescent OLEDs suffer from efficiency roll‐off due to triplet‐polaron quenching (TPQ). This study demonstrates for a large set of host‐guest combinations a spectroelectrochemical method to measure the absorption of charged molecules, enabling determining TPQ Förster radii (2.5–4 nm) from the spectral overlap.
Stan E. A. Jaspars +5 more
wiley +1 more source
, 2022 In this description, you get infos, to check the electronicpart transistor very ...
openaire +1 more source
POWERFUL GENERATORS OF HIGH-VOLTAGE PULSES WITH NANOSECOND FRONTS
Electrical engineering & Electromechanics, 2018 Purpose. Purpose of the article is to show the possibility of joint efficient operation of semiconductor switches and spark arresters in high-powerful high-voltage generators for obtaining nanosecond and shorter pulse fronts on a high-voltage load ...
N. I. Boyko
doaj +1 more source
Chemosensors, 2023 A carbon dot-functionalized solution-gated graphene transistor (CD-SGGT) was designed and prepared via the modification of CDs on the gate of SGGT. The above CDs were hydrothermally synthesized using DL-thioctic acid and triethylenetramine as C, N and S ...
Zhanpeng Ren +9 more
doaj +1 more source
An algorithm for transistor sizing in CMOS circuits [PDF]
, 1989 This paper describes a novel algorithm for automatic transistor sizing which is one technique for improving timing performance in CMOS circuits. The sizing algorithm is used to minimize area and power subject to timing constraints.
Gajski, Daniel +2 more
core
On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field [PDF]
, 2019 The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals.
Bauch, Thilo +6 more
core +2 more sources
Advanced Functional Materials, EarlyView.The fabrication of patterned transition metal dichalcogenide (TMD)/graphene heterostructures via direct laser writing reveals new interface chemistry and enables efficient, customizable assembly. Selective laser irradiation of functionalized TMD/graphene triggers localized reactions, forming chemically modified interfaces.
Xin Chen +12 more
wiley +1 more source
An Evolvable Organic Electrochemical Transistor for Neuromorphic Applications
Advancement of science, 2019 An evolvable organic electrochemical transistor (OECT), operating in the hybrid accumulation–depletion mode is reported, which exhibits short‐term and long‐term memory functionalities.
J. Gerasimov +6 more
semanticscholar +1 more source
A Horizontal-Gate Monolayer MoS2 Transistor Based on Image Force Barrier Reduction
Nanomaterials, 2019 Transition metal dichalcogenides (TMDCs) have received wide attention as a new generation of semiconductor materials. However, there are still many problems to be solved, such as low carrier mobility, contact characteristics between metal and two ...
Kun Yang +4 more
doaj +1 more source