Enhanced electrodynamic gating in two-dimensional transistors using ferroelectric capping
Two-dimensional (2D) materials such as semiconductors and ferroelectrics are promising for future energy-efficient logic devices because of their extraordinary electronic properties at atomic thickness.
Hemendra Nath Jaiswal+10 more
doaj +1 more source
In this description, you get infos, to check the electronicpart transistor very ...
openaire +3 more sources
Recent Progress on 2D‐Material‐Based Smart Textiles: Materials, Methods, and Multifunctionality
Advancements in 2D‐material‐integrated smart textiles are reviewed, with a focus on materials, fabrication methods, and multifunctional applications, including energy harvesting, monitoring, EMI shielding, energy storage, and thermal management. The discussion addresses key challenges and provides insights into the future development of next‐generation
Yong Choi+5 more
wiley +1 more source
Carbon Nanotubes as Schottky Barrier Transistors [PDF]
We show that carbon nanotube transistors operate as unconventional "Schottky barrier transistors", in which transistor action occurs primarily by varying the contact resistance rather than the channel conductance. Transistor characteristics are calculated for both idealized and realistic geometries, and scaling behavior is demonstrated.
arxiv +1 more source
Covalently‐Bonded Diaphite Nanoplatelet with Engineered Electronic Properties of Diamond
A novel approach to engineering the electronic properties of diamond is reported on the diaphite nanoplatelet consisting of (11¯${{\bar{1}}}$1) planes of diamond nanoplatelet covalently bonded with graphite (0001) planes. The strong sp3/sp2‐hybridized interfacial covalent bonding induces the electron transfer from diamond to graphite, resulting in a ...
Zhaofeng Zhai+9 more
wiley +1 more source
A Horizontal-Gate Monolayer MoS2 Transistor Based on Image Force Barrier Reduction
Transition metal dichalcogenides (TMDCs) have received wide attention as a new generation of semiconductor materials. However, there are still many problems to be solved, such as low carrier mobility, contact characteristics between metal and two ...
Kun Yang+4 more
doaj +1 more source
Analytical model of nanowire FETs in a partially ballistic or dissipative transport regime [PDF]
The intermediate transport regime in nanoscale transistors between the fully ballistic case and the quasi equilibrium case described by the drift-diffusion model is still an open modeling issue. Analytical approaches to the problem have been proposed, based on the introduction of a backscattering coefficient, or numerical approaches consisting in the ...
arxiv +1 more source
Electronic noise in charge sensitive preamplifiers for X-ray spectroscopy and the benefits of a SiC input JFET [PDF]
A comprehensive summary and analysis of the electronic noise affecting the resolution of X-ray, γ-ray and particle counting spectroscopic systems which employ semiconductor detectors and charge sensitive preamplifiers is presented. The noise arising from
Barnett, A M, Lioliou, G
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Organic Permeable Base Transistors—Reliable Large‐Scale Anodization for High Frequency Devices
Electrochemical anodization is optimized for organic permeable base transistors (OPBTs), achieving an unprecedented 87% yield and reproducibility for vertical organic transistors (VOTs) on a 15 x 15 cm wafer. Controlled Al base oxidation ensures a median transconductance of 10−3 S, leakage current below 10−9 A, current gain of 106, and transit ...
Amric Bonil+8 more
wiley +1 more source
Improved chopper circuit uses parallel transistors [PDF]
Parallel transistor chopper circuit operates with one transistor in the forward mode and the other in the inverse mode. By using this method, it acts as a single, symmetrical, bidirectional transistor, and reduces and stabilizes the offset ...
core +1 more source