Results 51 to 60 of about 362,969 (327)
Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate
GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field.
Matteo Meneghini+3 more
doaj +1 more source
Analytical model of nanowire FETs in a partially ballistic or dissipative transport regime [PDF]
The intermediate transport regime in nanoscale transistors between the fully ballistic case and the quasi equilibrium case described by the drift-diffusion model is still an open modeling issue. Analytical approaches to the problem have been proposed, based on the introduction of a backscattering coefficient, or numerical approaches consisting in the ...
arxiv +1 more source
Improved chopper circuit uses parallel transistors [PDF]
Parallel transistor chopper circuit operates with one transistor in the forward mode and the other in the inverse mode. By using this method, it acts as a single, symmetrical, bidirectional transistor, and reduces and stabilizes the offset ...
core +1 more source
Covalently‐Bonded Diaphite Nanoplatelet with Engineered Electronic Properties of Diamond
A novel approach to engineering the electronic properties of diamond is reported on the diaphite nanoplatelet consisting of (11¯${{\bar{1}}}$1) planes of diamond nanoplatelet covalently bonded with graphite (0001) planes. The strong sp3/sp2‐hybridized interfacial covalent bonding induces the electron transfer from diamond to graphite, resulting in a ...
Zhaofeng Zhai+9 more
wiley +1 more source
Self‐aligned gate transistors are developed with a single‐step dielectric passivation and fine‐tuning of source/drain electrode work function using phosphonic acid self‐assembled monolayers (SAM). This transistor architecture minimizes overlap capacitances and access resistance.
Linqu Luo+16 more
wiley +1 more source
Transistor Efek Medan Berbasis Semikonduktor Organik Pentacene untuk Sensor Kelembaban
The purpose of this paper is to fabricate a humidity sensor from organic semiconductor and to understand the effect of the transistor`s structure on the sensitivity of humidity sensor.
Fadliondi, Budiyanto
doaj +1 more source
A carbon dot-functionalized solution-gated graphene transistor (CD-SGGT) was designed and prepared via the modification of CDs on the gate of SGGT. The above CDs were hydrothermally synthesized using DL-thioctic acid and triethylenetramine as C, N and S ...
Zhanpeng Ren+9 more
doaj +1 more source
High-$κ$ field-effect transistor with copper-phthalocyanine [PDF]
The use of SrTiO$_3$ dielectrics as high-permittivity insulator in organic thin film field effect transistors (FET) is evaluated. Field-effect transistors with sputtered SrTiO$_3$ and copper-phthalocyanine (CuPc) as semiconducting layer were fabricated. The device preparation was performed in-situ in an ultra high vacuum chamber system.
arxiv +1 more source
Hybrid power semiconductor [PDF]
The voltage rating of a bipolar transistor may be greatly extended while at the same time reducing its switching time by operating it in conjunction with FETs in a hybrid circuit.
Chen, D. Y.
core +1 more source
Electronic noise in charge sensitive preamplifiers for X-ray spectroscopy and the benefits of a SiC input JFET [PDF]
A comprehensive summary and analysis of the electronic noise affecting the resolution of X-ray, γ-ray and particle counting spectroscopic systems which employ semiconductor detectors and charge sensitive preamplifiers is presented. The noise arising from
Barnett, A M, Lioliou, G
core +1 more source