Results 71 to 80 of about 686,107 (395)
Sensors, 2020 This study proposes a capacitive feedback transimpedance amplifier (CF-TIA) using a transistor in the direct current (DC) feedback loop for high DC dynamic range.
Jung-hoon Noh
doaj +1 more source
U-shaped bilayer graphene channel transistor with very high Ion/Ioff ratio
, 2011 A novel graphene transistor architecture is reported. The transistor has a U-shaped geometry and was fabricated using a gallium focused ion beam (FIB). The channel conductance was tuned with a back gate.
Boden, Stuart +4 more
core +1 more source
Advanced Functional Materials, EarlyView.A pore tuning strategy to amplify the multi‐site MOF‐SO2 interactions is proposed to achieve an enhanced trace SO2 capture and chemiresistive sensing in highly stable isostructural DMOFs by annelating benzene rings. This work provides a facile strategy to achieve tailor‐made stable MOF materials for specific multifunctional applications.
Shanghua Xing +9 more
wiley +1 more source
MoS2 Field-Effect Transistor with Sub-10 nm Channel Length.
Nano letters (Print), 2016 Atomically thin molybdenum disulfide (MoS2) is an ideal semiconductor material for field-effect transistors (FETs) with sub-10 nm channel lengths.
A. Nourbakhsh +12 more
semanticscholar +1 more source
International Journal of Nanomedicine, 2017 Hyun Woo Son,1,* Minhong Jeun,1,* Jaewon Choi,1,2 Kwan Hyi Lee1,2 1Center for Biomaterials, Biomedical Research Institute, Korea Institute of Science and Technology, Seoul, 2Department of Biomedical Engineering, Korea University of Science and ...
Son HW, Jeun M, Choi J, Lee KH
doaj
Transistor circuit increases range of logarithmic current amplifier [PDF]
, 1966 Circuit increases the range of a logarithmic current amplifier by combining a commercially available amplifier with a silicon epitaxial transistor.
Gilmour, G.
core +1 more source
Ultrasoft Iontronics: Stretchable Diodes Enabled by Ionically Conductive Bottlebrush Elastomers
Advanced Functional Materials, EarlyView.This work introduces a solvent‐free, ultrasoft, and stretchable ionic diode based on oppositely charged bottlebrush elastomers (BBEs). The BBE diode exhibits an ultralow Young's modulus (<23 kPa), a high rectification ratio of 46, and stretchability over 400%.
Xia Wu +6 more
wiley +1 more source
Review of: "(Field effect nano transistors) Nano transistor electronic quantity"
Qeios, 2023 Linda Brouce
semanticscholar +1 more source
Design of Cryogenic SiGe Low-Noise Amplifiers [PDF]
, 2007 This paper describes a method for designing cryogenic silicon-germanium (SiGe) transistor low-noise amplifiers and reports record microwave noise temperature, i.e., 2 K, measured at the module connector interface with a 50-Ω generator.
Bardin, Joseph C. +2 more
core
A tunable, dual mode field-effect or single electron transistor
, 2012 A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology.
B. Previtali +9 more
core +1 more source