Results 71 to 80 of about 368,201 (304)
Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes [PDF]
, 2023 Seunguk Song +15 more
openalex +1 more source
Advanced Functional Materials, EarlyView.PerFluoroAlkyl Substances (PFAS) are responsible of major and persistent environmental pollution worldwide. This work demonstrates an ultra‐sensitive sensor for PFAS based on an organic transistor whose gate is functionalized with a binary self‐assembled monolayer containing a perfluorinated molecule.
Rian Zanotti +8 more
wiley +1 more source
Table 1. Typical performance RF performance at Tcase = 25 �C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp �D ACPR885k ACPR1980k [PDF]
[1] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8- 13). PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz. [2] Measured within 30 kHz bandwidth.
Wimax Power Ldmos Transistor
core
Thermal Expansion Behavior of PM6 Studied Using In Situ Wide‐Angle X‐Ray Scattering
Advanced Functional Materials, EarlyView.In organic photovoltaics, small morphological changes can significantly impact performance. This study examines the thermal expansion of PM6 using in situ WAXS and GIWAXS from 30 to 300 °C. By analyzing samples of increasing complexity, factors like initial anisotropic nanoscale arrangements and substrate mismatches are quantified, revealing systematic
Meike Kuhn +5 more
wiley +1 more source
Impact of UV annealing on the hole effective mobility in SnO pFET
Scientific ReportsUsing ultraviolet (UV) annealing through wide energy bandgap HfO2/SiO2 gate dielectric, nanosheet SnO pFET achieved hole effective mobility (µeff) from 55 cm2/V-s at low hole density (Qh) to 13.38 cm2/V-s at 5 × 1012 cm-2 Qh, compared to that of 9.03 cm2/
Shi-Hao Zeng +3 more
doaj +1 more source
Indirect Thermographic Measurement of the Temperature of a Transistor Die during Pulse Operation
SensorsThis paper presents aspects related to the indirect thermographic measurement of a C2M0280120D transistor in pulse mode. The tested transistor was made on the basis of silicon carbide and is commonly used in many applications.
Arkadiusz Hulewicz +2 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Janus (MoS2) transistors functionalized with sodium alginate (SA) and poly(vinylidene fluoride‐co‐trifluoroethylene) [P(VDF‐TrFE)] exhibit persistent photo‐induced ionic gating, driven by dynamic cation migration at the hybrid interface. This ionic mechanism enables finely tunable photoconductivity and emulates key synaptic plasticity behaviors ...
Yeonsu Jeong +5 more
wiley +1 more source
A Horizontal-Gate Monolayer MoS2 Transistor Based on Image Force Barrier Reduction
Nanomaterials, 2019 Transition metal dichalcogenides (TMDCs) have received wide attention as a new generation of semiconductor materials. However, there are still many problems to be solved, such as low carrier mobility, contact characteristics between metal and two ...
Kun Yang +4 more
doaj +1 more source
Metal Oxide Silicon /MOS/ transistors protected from destructive damage by wire [PDF]
, 1966 Loop of flexible, small diameter, nickel wire protects metal oxide silicon /MOS/ transistors from a damaging electrostatic potential. The wire is attached to a music-wire spring, slipped over the MOS transistor case, and released so the spring tensions ...
Deboo, G. J., Devine, E. J.
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Advanced Functional Materials, EarlyView.Charge carrier concentration and mobility in TiO2, ZrO2, and HfO2 powder films are experimentally mapped as a function of temperature. The results uncover polaron‐mediated transport regimes and field‐activated conduction, enabling the design of oxide‐based electronic and energy devices with thermally tunable functionality.
Beatriz Moura Gomes +3 more
wiley +1 more source