Results 71 to 80 of about 369,729 (357)

Terahertz‐Driven Ultrafast Dynamics of Rare‐Earth Nickelates by Controlling Only the Charge Degree of Freedom

Advanced Functional Materials, EarlyView.
The THz drive of the Mott insulating state of a rare‐earth nickelate induces instantaneous insulator‐metal transition via quantum tunneling of valence electrons across the bandgap. This transition is pure electronic and highly non‐thermal, which may find its applications in ultrafast opto‐electronics with enhanced performance and minimal device size ...
Gulloo Lal Prajapati, Sergey Kovalev, Igor Ilyakov, Atiqa Arshad, Gaurav Dubey, Ketan S. Navale, Dhanvir Singh Rana, Jan‐Christoph Deinert   +7 more
wiley   +1 more source

Indirect Thermographic Measurement of the Temperature of a Transistor Die during Pulse Operation

Sensors
This paper presents aspects related to the indirect thermographic measurement of a C2M0280120D transistor in pulse mode. The tested transistor was made on the basis of silicon carbide and is commonly used in many applications.
Arkadiusz Hulewicz, Krzysztof Dziarski, Łukasz Drużyński   +2 more
doaj   +1 more source

A Novel Approach to Implementing Artificial Thalamic Neurons with Ferroelectric Transistors

Advanced Functional Materials, EarlyView.
Artificial neurons created using CMOS technology often require a large number of transistors and capacitors. This study introduces an artificial thalamic neuron that employs only five CMOS compatible ferroelectric transistors. The manufactured thalamic neuron demonstrates leaky integrate‐and‐fire‐or‐burst (LIFB) functionalities, featuring self ...
Andreas Grenmyr, Jiayuan Zhang, Jingxuan Sun, Kenta Moto, Stefan Wiefels, Seong‐Ryong Koh, Detlev Grützmacher, Qing‐Tai Zhao   +7 more
wiley   +1 more source

Bipolar Charge Plasma Transistor: A Novel Three Terminal Device

, 2012
A distinctive approach for forming a lateral Bipolar Charge Plasma Transistor (BCPT) is explored using 2-D simulations. Different metal work-function electrodes are used to induce n- and p-type charge plasma layers on undoped SOI to form the emitter ...
Kumar, M. Jagadesh, Nadda, Kanika
core   +1 more source

Integration of Perovskite/Low‐Dimensional Material Heterostructures for Optoelectronics and Artificial Visual Systems

Advanced Functional Materials, EarlyView.
Heterojunctions combining halide perovskites with low‐dimensional materials enhance optoelectronic devices by enabling precise charge control and improving efficiency, stability, and speed. These synergies advance flexible electronics, wearable sensors, and neuromorphic computing, mimicking biological vision for real‐time image analysis and intelligent
Yu‐Jin Du, Junjie Yang, Ziyu Lv, Yongbiao Zhai, Zezhuang Yi, Yuhui Xie, Ming‐Lin Zheng, Xiangyu Ma, Guodong Gong, Yan Wang, Ye Zhou, Su‐Ting Han   +11 more
wiley   +1 more source

Polyimide Dielectric Layer on Filaments for Organic Field Effect Transistors: Choice of Solvent, Solution Composition and Dip-Coating Speed

AUTEX Research Journal, 2014
In today’s research, smart textiles is an established topic in both electronics and the textile fields. The concept of producing microelectronics directly on a textile substrate is not a mere idea anymore and several research institutes are working on ...
Rambausek Lina, Bruneel Els, De Mey Gilbert, Van Langenhove Lieva   +3 more
doaj   +1 more source

Table 1. Typical performance RF performance at Tcase = 25 �C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp �D ACPR885k ACPR1980k [PDF]

[1] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8- 13). PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz. [2] Measured within 30 kHz bandwidth.
Wimax Power Ldmos Transistor
core  

U-shaped bilayer graphene channel transistor with very high Ion/Ioff ratio

, 2011
A novel graphene transistor architecture is reported. The transistor has a U-shaped geometry and was fabricated using a gallium focused ion beam (FIB). The channel conductance was tuned with a back gate.
Boden, Stuart, Ghiass, Mohammad Adel, Mizuta, Hiroshi, Moktadir, Zakaria, Rutt, Harvey   +4 more
core   +1 more source

Engineering Strategies for 2D Layered Tin Halide Perovskite Field‐Effect Transistors

Advanced Functional Materials, EarlyView.
2D halide perovskites are promising candidates for field‐effect transistor (FET) applications due to their high stability and suppressed ion migration in the presence of bulky organic spacers. This review systematically summarizes the optimization engineering strategies of 2D perovskite FETs and future challenges, which provide guidance for developing ...
Shuanglong Wang, Zhitian Ling, Paul W. M. Blom, Tomasz Marszalek, Wojciech Pisula   +4 more
wiley   +1 more source

Module failure isolation circuit for paralleled inverters [PDF]

, 1979
A module failure isolation circuit is described which senses and averages the collector current of each paralled inverter power transistor and compares the collector current of each power transistor the average collector current of all power transistors ...
Nagano, S.
core   +1 more source