Results 91 to 100 of about 125,060 (320)

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

Advanced Functional Materials, EarlyView.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak, Ryun‐Han Koo, Youngchan Cho, Changhyeon Han, Dongbin Kim, Soi Jeong, Yunho Shin, Joonhyeok Choi, Jiseong Im, Jonghyun Ko, Jong‐Ho Lee, Jangsaeng Kim, Youngho Kang, Wonjun Shin, Daewoong Kwon   +14 more
wiley   +1 more source

Compact Model for L-Shaped Tunnel Field-Effect Transistor Including the 2D Region

Applied Sciences, 2019
The L-shaped tunneling field-effect transistor (LTFET) is the only line-tunneling type of TFET to be experimentally demonstrated. To date, there is no literature available on the compact model of LTFET.
Faraz Najam, Yun Seop Yu
doaj   +1 more source

What constitutes a nanoswitch? A Perspective

, 2014
Progress in the last two decades has effectively integrated spintronics and nanomagnetics into a single field, creating a new class of spin-based devices that are now being used both to Read (R) information from magnets and to Write (W) information onto ...
Amiri, Bae, Behin-Aein, Behin-Aein, Behin-Aein, Datta, Diep, Feynman, Haensch, Heron, Kang, Kubota, Liu, Pai, Srinivasan, Taur, Theis, Zhou, Zhu   +18 more
core   +1 more source

SymFET: A Proposed Symmetric Graphene Tunneling Field-Effect Transistor [PDF]

IEEE Transactions on Electron Devices, 2012
In this work, an analytical model to calculate the channel potential and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The current in a SymFET flows by tunneling from an n-type graphene layer to a p-type graphene layer.
Zhao, Pei, Feenstra, Randall M., Gu, Gong, Jena, Debdeep   +3 more
openaire   +2 more sources

Does a Morphotropic Phase Boundary Exist in ZrxHf1‐xO2‐Based Thin Films?

Advanced Functional Materials, EarlyView.
This study investigates 6 nm zirconium‐rich hafnium‐zirconium oxide thin–film metal–insulator–metal capacitors using a combination of experimental methods and machine learning–based molecular dynamics simulations to provide insight into the physical mechanisms that enhance the dielectric constant near 0 V and attribute it to the field‐induced ...
Pramoda Vishnumurthy, Richard Ganser, Dong‐Gyu Kim, Intak Jeon, Chang Hwa Jung, Hanjin Lim, Thomas Mikolajick, Susan Trolier‐McKinstry, Alfred Kersch, Uwe Schroeder   +9 more
wiley   +1 more source

Reducing the Impact of Reverse Currents in Tunnel FET Rectifiers for Energy Harvesting Applications

IEEE Journal of the Electron Devices Society, 2017
RF to dc passive rectifiers can benefit from the superior performance at low voltage of tunnel transistors. They have shown higher power conversion efficiency (PCE) at low input power than Si FinFETs counterparts.
Juan Nunez, Maria J. Avedillo
doaj   +1 more source

Design Rules for High Performance Tunnel Transistors from 2D Materials

, 2016
Tunneling field-effect transistors (TFETs) based on 2D materials are promising steep sub-threshold swing (SS) devices due to their tight gate control. There are two major methods to create the tunnel junction in these 2D TFETs: electrical and chemical ...
Appenzeller, Joerg, Ilatikhameneh, Hesameddin, Klimeck, Gerhard, Rahman, Rajib   +3 more
core   +1 more source

Surface Diffusion in SnTe‐PbTe Monolayer Lateral Heterostructures

Advanced Functional Materials, EarlyView.
The lateral heterostructures between 2D materials often suffer from the interdiffusion at the interfaces. Here, a surface diffusion mechanism is found to be dominating at the interfaces between semiconducting SnTe and PbTe monolayers. Atomically sharp interfaces can be achieved by suppressing this diffusion process. ABSTRACT The construction of complex
Jing‐Rong Ji, Zi'Ang Gao, Shiva Prasad Poudel, Rui‐Qi Cao, Tianzhe Chen, Luxin Li, Chong Liu, Salvador Barraza‐Lopez, Stuart S. P. Parkin, Kai Chang   +9 more
wiley   +1 more source

A Programmable Semiconductor Containing Active Molecular Photoswitches Located in the Crystal's Volume Phase

Advanced Functional Materials, EarlyView.
A novel approach for the design of functional semiconductors is presented, which utilizes the excellent optoelectronic properties of layered hybrid perovskites and the possibility to introduce a molecular photoswitch as the organic spacer. This concept is successfully demonstrated on a coumarin‐based system with the possibility to change the bandgap ...
Oliver Treske, Yaşar Krysiak, Hans Tornatzky, Markus R. Wagner, Sebastian Polarz   +4 more
wiley   +1 more source

Switching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor [PDF]

Journal of Optoelectronical Nanostructures, 2020
: In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET)
Zahra Ahangari
doaj