Results 111 to 120 of about 2,904 (271)
Resonant tunnelling gate field-effect transistor
Electronics Letters, 1987 A new negative differential resistance field-effect transistor concept, based on resonant tunnelling, is demonstrated. The gate of this novel device consists of an AlAs/GaAs double barrier. The drain current against drain and gate voltages exhibit a peak due to the quenching of the resonant tunneling gate current.
F. Capasso, S. Sen, F. Beltram, A.Y. Cho
openaire +1 more source
, 2017 Tunnel field-effect transistor (TFET) has recently been considered as a promising candidate for low-power integrated circuits. In this paper, we present an adequate examination on the roles of gate-oxide thickness reduction in scaling bulk and thin-body ...
Chun-Hsing Shih +6 more
core +1 more source
Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors
Advanced Science, EarlyView.This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung +7 more
wiley +1 more source
Sub-10-nm Tunnel Field-Effect Transistor With Graded Si/Ge Heterojunction
, 2020 [[abstract]]This study presents a new sub-10-nm tunnel field-effect transistor ( TFET) with bandgap engineering using a graded Si/Ge heterojunction. Both the height and width of the tunneling barrier are highly controlled by applying gate voltages to ...
Shih, CH, 施君興
core +1 more source
Ultra low power circuits design based on III-V group heterojunction tunnel field effect transistor
, 2015 With the scaling down of MOSFET, the static leakage current increases exponentially since the Subthreshold Swing(SS) is limited by the thermal theory to 60mV/dec. Tunnel field effect transistors based on BTBT have slope Subthreshold Swing and can be used
Xin'an Wang +7 more
core +1 more source
Advanced Science, EarlyView.This study demonstrates a Bi2WO6/SrBi2Ta2O9 heterojunction where light‐driven ferroelectric polarization reversal couples with persistent photoconductivity, enabling exclusive NO2 selective room‐temperature sensing. The device achieves a two‐order‐of‐magnitude sensitivity enhancement over an unpolarized device, a sub‐ppb detection limit, and robust ...
Liping Tan +11 more
wiley +1 more source
Junction Physics and Architectural Paradigms in Optoelectronic Semiconductor Fibers
Advanced Science, EarlyView.Optoelectronic fibers are emerging as a key platform for distributed sensing, energy harvesting, and optical communication in deformable systems. Their performance is fundamentally governed by junction formation under confined, dynamic processing conditions.
Hailiang Wang +4 more
wiley +1 more source
Special Topic on Tunnel Field-Effect Transistors
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020 The tunneling field-effect transistor (T-FET) is considered a future transistor option due to its steep-slope prospects and the resulting advantages in operating at low supply voltage ( $V_{\mathrm {DD}}$ ). Reducing supply voltage while keeping a low leakage current and a reasonably high ON-current is critical for minimizing energy consumption and ...
openaire +2 more sources
Advanced Electronic Materials, EarlyView.A novel strategy for achieving high current density in van der Waals (vdW) heterostructure‐based light‐emitting devices (LEDs) is proposed. Based on this concept, an LED utilizing a WS2/WSe2 heterostructure was fabricated, achieving a current density of 9.4 × 104 A/cm2.
Rei Usami +7 more
wiley +1 more source
Investigation of gate-engineered heterostructure tunnel field effect transistor as a label-free biosensor: a compact study. [PDF]
Appl Phys A Mater Sci Process, 2023 Ghosh R, Karmakar A, Saha P.
europepmc +1 more source