Results 121 to 130 of about 2,904 (271)

Gate-Induced Schottky Barrier Lowering Effect in AlGaN/GaN Metal–2DEG Tunnel Junction Field Effect Transistor

, 2011
The Schottky-source forward current-voltage characteristics were measured and analyzed in a recently reported AlGaN/GaN metal-2-D-electron-gas tunnel junction field-effect transistor (FET) (TJ-FET) in order to characterize the effective Schottky barrier ...
Yuan, Li, Zhou, Qi, Zhou, Chunhua, Kevin J. Chen, Chen, Kevin J., Chunhua Zhou, Chen, Hongwei, Hongwei Chen, Li Yuan, Qi Zhou   +9 more
core   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Steep-slope tunnel field-effect transistor based on the two-dimensional WSe2 and ReS2

, 2021
Two-dimensional (2D) materials have drawn an immense attention in the research field and are well-known for their outstanding physical, mechanical and optical properties.
Koh, Hui Hui
core  

Uranium Doped Gallium Nitride Epitaxial Thin Films

Advanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix, Sabin Regmi, Aaron G. Penders, Sohail Shah, Kevin D. Vallejo, Volodymyr B. Buturlim, Belief Rifore, Krzysztof Gofryk, Mukesh Bachhav, Nicholas J. Borys, Brelon J. May   +10 more
wiley   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Silicon-Germanium Based Tunnel Field Effect Transistor for Low Power Computation [PDF]

, 2014
In this thesis we mainly focus on silicon germanium based gate normal tunnel field effect transistor. We carried out TCAD modeling with special attention paid to band structure modification of the silicon germanium heterojunction.
Ma, Siguang
core  

Ge Condensation Process for High ON/OFF Ratio of SiGe Gate-All-Around Nanowire Tunnel Field-Effect Transistor

, 2019
In this study, we suggest an improvement method for high ON/OFF ratio and steep subthreshold swing (SS) which are suitable for gate-all-around (GAA) SiGe tunnel field-effect Transistor (TFET).
Yunho Choi, Choi, Yunho, Park, Byung-Gook, Byung-Gook Park, Kim, Sangwan, Ryoongbin Lee, Sangwan Kim, Lee, Ryoongbin, Soyoun Kim, Kitae Lee, Lee, Kitae, Kim, Sihyun, Kim, Soyoun, Lee, Junil, Sihyun Kim, Junil Lee   +15 more
core   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

Effects of Back-Gate Bias on Subthreshold Swing of Tunnel Field-Effect Transistor

, 2019
In this study, the effects of back-gate bias on the subthreshold swing (S) of a tunnel field-effect transistor (TFET) were discussed. The electrostatic characteristics of the back-gated TFET were obtained using technology computer-aided design (TCAD ...
Jaehong Lee, Garam Kim, Sangwan Kim
core   +1 more source