Results 101 to 110 of about 2,904 (271)

Dual Metal Triple-gate-dielectric (DM_TGD) Tunnel Field Effect Transistor: A Novel Structure for Future Energy Efficient Device

, 2021
Background: Power reduction is a serious design concern for submicron logic circuits, which can be achieved by scaling the supply voltage. Modern Field Effect Transistor (FET) circuits require at least 60 mV of gate voltage for better current drive at ...
Singh, Ajay Kumar, Tan, Chun Fui
core   +1 more source

Triple‐Mode Ferroelectric Thin‐Film Transistor for Hybrid Electrical–Optical Reservoir Computing

Advanced Science, EarlyView.
A triple‐mode ferroelectric thin‐film transistor is developed by integrating Si3N4/HZO/IGZO layers to realize three independent memory modes: electric long‐term, electric short‐term, and optical short‐term. This single‐device architecture functions as both a reservoir and readout layer, achieving 92.43% MNIST accuracy. It offers a fully hardware‐based,
Hyeonho Lee, Seungjun Lee, Tae‐Hyeon Kim, Yonghee Jeong, Gwangmin An, Minsu Ko, Junsu Yu, Heung Soo Kim, Yang Chai, Sungjun Kim   +9 more
wiley   +1 more source

Single-electron multiple-valued memory using ultra-small floating gate metal-oxide-semiconductor field effect transistor

, 2004
This paper proposes a novel single-electron multiple-valued memory. It is a metal-oxide-semiconductor field effect transistor (MOS)-type memory with multiple separate control gates and floating gate layer, which consists of nano-crystal grains.
Wu NJ, Ou XB, Ou, XB, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.   +2 more
core  

Electronic transport, field effect and doping in pentacene nanorods and monolayer thin film prepared by combination of nano-fabrication and self-assembly [PDF]

, 2008
The transport in organic semiconductors is investigated on the nanometer scale. Field effect transistor with device-active layers in the monolayer (ML) range are characterized in-situ right after the controlled deposition of pentacene.
Vanoni, Claudio
core   +1 more source

Observation of Excitonic Instability in a Monolayer Ta2NiSe5 With Strain Disorder

Advanced Science, EarlyView.
Monolayer Ta2${\rm Ta}_2$NiSe5${\rm NiSe}_5$ sustains an excitonic insulating phase up to 190 K, with Raman signatures of gap opening and critical excitonic fluctuations. Thickness‐independent large gap ratios highlight strong exciton‐phonon coupling, while substrate‐induced strain disorder depresses Tc, establishing monolayer Ta2${\rm Ta}_2$NiSe5${\rm
So Young Kim, Kwangrae Kim, Dowook Kim, Ji Eun Lee, Jieun Seok, Chang Il Kwon, Jo Hyun Yun, Chang‐Jong Kang, Jae Hoon Kim, H. W. Yeom, Tae‐Hwan Kim, Jonghwan Kim, B. J. Kim, Jun Sung Kim   +13 more
wiley   +1 more source

Tunnel Field-Effect Transistors: State-of-the-Art

IEEE Journal of the Electron Devices Society, 2014
Progress in the development of tunnel field-effect transistors (TFETs) is reviewed by comparing experimental results and theoretical predictions against 16-nm FinFET CMOS technology. Experiments lag the projections, but sub-threshold swings less than 60 mV/decade are now reported in 14 TFETs.
Hao Lu, Alan Seabaugh
openaire   +2 more sources

Bi-layer pseudo-spin field-effect transistor [PDF]

, 2009
A bi-layer pseudo-spin field-effect transistor (BiSFET) is disclosed. The BiSFET includes a first and second conduction layers separated by a tunnel dielectric. The BiSFET transistor also includes a first gate separated from the first conduction layer by
Palle, Dharmendar Reddy, Banerjee, Sanjay K., Tutuc, Emanuel, MacDonald, Allan, Register, Leonard Franklin, II   +4 more
core   +1 more source

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

Advanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source

Giant tunnel electroresistance through a Van der Waals junction by external ferroelectric polarization

Nature Communications
The burgeoning interest in two-dimensional semiconductors stems from their potential as ultrathin platforms for next-generation transistors. Nonetheless, there persist formidable challenges in fully obtaining high-performance complementary logic ...
Guangdi Feng, Yifei Liu, Qiuxiang Zhu, Zhenyu Feng, Shengwen Luo, Cuijie Qin, Luqiu Chen, Yu Xu, Haonan Wang, Muhammad Zubair, Ke Qu, Chang Yang, Shenglan Hao, Fangyu Yue, Chungang Duan, Junhao Chu, Bobo Tian   +16 more
doaj   +1 more source

Electrically Doped PNPN Tunnel Field-Effect Transistor Using Dual-Material Polarity Gate with Improved DC and Analog/RF Performance. [PDF]

Micromachines (Basel), 2023
Shan C, Liu Y, Liu Y, Wang Y, Cai R, Su L.   +5 more
europepmc   +1 more source