Results 61 to 70 of about 125,060 (320)
Tunnel Spectroscopy of a Proximity Josephson Junction [PDF]
, 2011 We present tunnel spectroscopy experiments on the proximity effect in lateral superconductor-normal metal-superconductor (SNS) Josephson junctions. Our weak link is embedded into a superconducting (S) ring allowing phase biasing of the Josephson junction
E. L. Wolf +8 more
core +2 more sources
Source-all-around tunnel field-effect transistor (SAA-TFET): proposal and design
Semiconductor Science and Technology, 2019 In this paper, a new source-all-around tunnel field-effect transistor (SAA-TFET) is proposed and investigated by using TCAD simulation. The tunneling junction in the SAA-TFET is divided laterally and vertically with respect to the channel direction which
A. Shaker +4 more
semanticscholar +1 more source
MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance
Advanced Functional Materials, EarlyView.Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley +1 more source
Current fluctuations of noncollinear single-electron spin-valve transistors
, 2012 We theoretically investigate the finite-frequency as well as the zero-frequency charge-current fluctuations through a noncollinear single-electron spin-valve transistor in the limit of sequential tunneling.
König, Jürgen, Lindebaum, Stephan
core +1 more source
Dielectric Engineered Tunnel Field-Effect Transistor [PDF]
IEEE Electron Device Letters, 2015 The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics results in a high electric field at the tunnel junction. As a result a record ON-current of about 1000 uA/um and a subthreshold swing (SS) below 20mV/dec are predicted for ...
Ilatikhameneh, Hesameddin +4 more
openaire +2 more sources
Advanced Functional Materials, EarlyView.Multicolor optoelectronic synapses are realized by vertically integrating solution‐processed MoS2 thin‐film and SWCNT. The electronically disconnected but interactive MoS2 enables photon‐modulated remote doping, producing a bi‐directional photoresponse.
Jihyun Kim +8 more
wiley +1 more source
Switching Mechanism and the Scalability of vertical-TFETs
, 2017 In this work, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked heretojunctions from 2D transition metal dichalcogenide (TMD) materials are studied by atomistic quantum transport simulations. The switching mechanism of v-TFET
Chen, Fan +4 more
core +1 more source
Micrometre-scale refrigerators [PDF]
, 2000 A superconductor with a gap in the density of states or a quantum dot with discrete energy levels is a central building block in realizing an electronic on-chip cooler.
H Putnam +4 more
core +3 more sources
Advanced Functional Materials, EarlyView.This study investigates electromechanical PUFs that improve on traditional electric PUFs. The electron transport materials are coated randomly through selective ligand exchange. It produces multiple keys and a key with motion dependent on percolation and strain, and approaches almost ideal inter‐ and intra‐hamming distances.
Seungshin Lim +7 more
wiley +1 more source
A New Heterostructure Junctionless Tunnel Field Effect Transistor with Silicon-on-Nothing Technique for DC Parameter Improvement [PDF]
مجله مدل سازی در مهندسیIn this paper, a novel heterostructure junctionless tunnel field effect transistor with silicon-on-nothing technology (SON HS-JLTFET) is proposed. The proposed device has two advantages over conventional JLTFET.
Amin Vanak, Amir Amini
doaj +1 more source