Results 81 to 90 of about 125,060 (320)

Broken Symmetry and Coherence of Molecular Vibrations in Tunnel Transitions

, 2004
We examine the Breit-Wigner resonances that ensue from field effects in molecular single electron transistors (SETs). The adiabatic dynamics of a quantum dot elastically attached to electrodes are treated in the Born-Oppenheimer approach.
Dykhne, Alexander M., Rudavets, Alexander G.   +1 more
core   +3 more sources

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source

Performance Projections for a Reconfigurable Tunnel NanoFET

IEEE Journal of the Electron Devices Society, 2017
Theoretical performance projections of a reconfigurable tunnel (RT) field-effect transistor (FET) employing multiple parallel 1-D channels are given. The RT-nanoFET can be reconfigured on demand from pto n-type and from low power (LP) to high performance
Stefan Blawid, Denise L. M. de Andrade, Sven Mothes, Martin Claus   +3 more
doaj   +1 more source

Nonequilibrium spin distribution in single-electron transistor

, 1998
Single-electron transistor with ferromagnetic outer electrodes and nonmagnetic island is studied theoretically. Nonequilibrium electron spin distribution in the island is caused by tunneling current.
A. Milner, A. N. Korotkov, A. N. Korotkov, Alexander N. Korotkov, D. Lubzens, D. V. Averin, J. Barnaś, J. C. Slonczewski, J. S. Helman, J. S. Moodera, J. S. Moodera, K. K. Likharev, K. Majumdar, K. Ono, K. Ono, K. Ono, L. F. Schelp, M. Johnson, M. Johnson, M. Julliere, R. Meservey, S. Sankar, S. Takahashi, V. I. Safarov   +23 more
core   +1 more source

Resonant tunnelling gate field-effect transistor

Electronics Letters, 1987
A new negative differential resistance field-effect transistor concept, based on resonant tunnelling, is demonstrated. The gate of this novel device consists of an AlAs/GaAs double barrier. The drain current against drain and gate voltages exhibit a peak due to the quenching of the resonant tunneling gate current.
F. Capasso, S. Sen, F. Beltram, A.Y. Cho
openaire   +1 more source

Selective Charge Injection via Topological van der Waals Contacts for Barrier‐Free p‐Type TMD Transistors

Advanced Functional Materials, EarlyView.
 Topological van der Waals contacts represent a new class of electrodes for 2D semiconductors, enabling precise control of the Schottky barrier height (SBH) and contact resistance (RC) through interlayer distance and orbital hybridization engineering. In Se‐based transition metal dichalcogenides, these contacts achieve an ultralow SBH of 7 meV, RC of 0.
Soheil Ghods, Ho‐Chan Jang, Jun‐Hui Choi, Min Woo Kim, Hyunjin Lee, Tae‐Hoon Kim, Keun Heo, Hyung Jun Kwun, Taehun Lee, Yoon Kyeung Lee, Sang Hoon Lee, Seung‐Il Kim, Woonhyuk Baek, Sukang Bae, Ji‐Yun Moon, Jae‐Hyun Lee   +15 more
wiley   +1 more source

Detection of a single-charge defect in a metal-oxide-semiconductor structure using vertically coupled Al and Si single-electron transistors

, 2009
An Al-AlO_x-Al single-electron transistor (SET) acting as the gate of a narrow (~ 100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET) can induce a vertically aligned Si SET at the Si/SiO_2 interface near the MOSFET channel conductance ...
B. E. Kane, L. Sun, S. M. Sze
core   +1 more source

Selection Strategies for Flexible Pressure Sensor Electrode Materials Toward Ultrafast Response

Advanced Functional Materials, EarlyView.
This study reveals, for the first time, how the electrode–organic interface governs the temporal performance of flexible pressure sensors. By pairing high‐conductivity CVD PEDOT with commonly used metal electrodes, the authors demonstrate that interfacial energy alignment dictates microsecond‐scale response, providing a straightforward design strategy ...
Jinwook Baek, Yuxuan Zhang, Hyeondong Yang, Minyoung Kim, Pavlos P. Vlachos, Jeongok Choe, Bo‐Gyu Bok, Kejie Zhao, Han‐Wook Song, Min‐Seok Kim, Martin Byung‐Guk Jun, Sunghwan Lee   +11 more
wiley   +1 more source

Modeling a Schottky-barrier carbon nanotube field-effect transistor with ferromagnetic contacts

, 2007
In this study, a model of a Schottky-barrier carbon nanotube field- effect transistor (CNT-FET), with ferromagnetic contacts, has been developed. The emphasis is put on analysis of current-voltage characteristics as well as shot (and thermal) noise.
Anantram M P, Anantram M P Lundstrom M S Nikonov D E, Beenakker C, Blanter Ya M, Cottet A, Cottet A, Hueso E, John D Castro L Pereira P Pulfrey D, Krompiewski S, Léonard F, Nosho Y, S Krompiewski   +11 more
core   +1 more source

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures [PDF]

Science, 2012
Tunnel Barriers for Graphene Transistors Transistor operation for integrated circuits not only requires that the gate material has high-charge carrier mobility, but that there is also an effective way of creating a barrier to current flow so that the device can be switched off and not waste power.
Britnell, L., Gorbachev, R. V., Jalil, R., Belle, B. D., Schedin, F., Mishchenko, A., Georgiou, T., Katsnelson, M. I., Eaves, L., Morozov, S. V., Peres, N. M. R., Leist, J., Geim, A. K., Novoselov, K. S., Ponomarenko, L. A.   +14 more
openaire   +7 more sources