Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors
Owing to the breakthrough of the kT/q thermal limit of 60 mV/decade subthreshold swing at room temperature, tunnel field-effect transistors (TFETs) have demonstrated their potential for energy-efficient applications.
Luu The Vinh +2 more
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Electrically Doped PNPN Tunnel Field-Effect Transistor Using Dual-Material Polarity Gate with Improved DC and Analog/RF Performance. [PDF]
Shan C +5 more
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Impact of drain and source engineering on dual metal InAs-GaSb VTFETs with high-K gate stack design. [PDF]
Saravanan M +3 more
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Modeling trap dynamics in oxide-engineered heterostructure TFETs for breast cancer detection. [PDF]
Ghosh R, Saha P.
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Preparation and Performance Exploration of MoS<sub>2</sub>/WSe<sub>2</sub> Van Der Waals Heterojunction Tunneling Field-Effect Transistor. [PDF]
Chong C, Liu H, Wang S, Chen S, Yan C.
europepmc +1 more source
Ge Pocket-Based Dual Gate Tunnel FET: A Label-Free Biosensor. [PDF]
Wani MS +4 more
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A Review of Tunnel Field-Effect Transistors: Materials, Structures, and Applications. [PDF]
Chen S, An Y, Wang S, Liu H.
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Study of Dielectric-Modulated Buried Source Horizontally Double-Gate TFET-Based Biosensors. [PDF]
Yang J +7 more
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A novel ultra-steep subthreshold swing iTFET with control gate and control source biasing. [PDF]
Lin JT, Tu RC.
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