Results 91 to 100 of about 15,872,036 (205)
IEEE Journal of the Electron Devices Society, 2015 Tunnel field effect transistors (TFETs) have emerged as one of the most promising post-CMOS transistor technologies. In this paper, we: 1) review the perspectives of such devices for low-power high-frequency analog integrated circuit applications (e.g ...
Leonardo Barboni +2 more
doaj +1 more source
International Journal of Innovative Technology and Exploring Engineering, 2019 Tunnel Field Effect Transistor (TFET) is gated reverse biased P-I-N diode structured semiconductor device and can be considered as a reliable low power device. TCAD (Sentaurus 2D) simulations for various Gate metal work function (4.1-4.3 eV) shows that its ON-current (ION) arises from quantum mechanical band-to-band tunneling (B2BT) and observed that ...
Deepak Kumar +3 more
openaire +1 more source
DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As
Holos, 2018 Using calibrated simulations, we report the In0.35Ga0.65As based tunnel field-effect transistor (TFET) with thin δ-doped n+ pocket at the source-channel interface to improve the parameters such as on current (Ion), off-current (Ioff) and subthreshold ...
Behnam Dorostkar, Saeid Marjani
doaj +1 more source
Performance Study and Analysis of Heterojunction Gate All Around Nanowire Tunneling Field Effect Transistor [PDF]
Journal of Optoelectronical Nanostructures, 2019 In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details.
Mahsa Roohy, Reza Hosseini
doaj
Gas sensing using an organic/silicon hybrid field-effect transistor [PDF]
, 1996 This thesis describes the fabrication and properties of novel organic/silicon hybrid field-effect transistor gas sensors. Whilst most of the work used the emeraldine base form of the conductive polymer polyaniline, the response of a device incorporating ...
Barker, Paul Simon
core
, 2014 The single particle model has been developed for the tunneling between two monolayer two-dimensional (2D) semiconductors [1]. Based on this model, a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor (Thin-TFET) (see Fig.1a)
Huili Grace Xing +7 more
core +1 more source
, 2019 In this study, we suggest an improvement method for high ON/OFF ratio and steep subthreshold swing (SS) which are suitable for gate-all-around (GAA) SiGe tunnel field-effect Transistor (TFET).
Yunho Choi +15 more
core +1 more source
IET Circuits, Devices and SystemsThis study explores the impact of integrating a gallium arsenide (GaAs) pocket at the source and drain in a dual-material gate-oxide-stack double-gate tunnel field-effect transistor (DMGOSDG-TFET).
Km. Sucheta Singh +4 more
doaj +1 more source
, 2019 The fast-developing information technology has imposed urgent need for effective solutions to overcome the increasing power density in further scaled electronic devices and systems. The tunnel field-effect transistor (TFET) built with two-dimensional (2D)
Qingqing Sun (280493) +19 more
core +1 more source
Silicon-Germanium Based Tunnel Field Effect Transistor for Low Power Computation [PDF]
, 2014 In this thesis we mainly focus on silicon germanium based gate normal tunnel field effect transistor. We carried out TCAD modeling with special attention paid to band structure modification of the silicon germanium heterojunction.
Ma, Siguang
core