Results 81 to 90 of about 15,872,036 (205)
Sub-10-nm Tunnel Field-Effect Transistor With Graded Si/Ge Heterojunction
, 2020 [[abstract]]This study presents a new sub-10-nm tunnel field-effect transistor ( TFET) with bandgap engineering using a graded Si/Ge heterojunction. Both the height and width of the tunneling barrier are highly controlled by applying gate voltages to ...
Chien, ND
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Steep switching in trimmed-gate tunnel FET
AIP Advances, 2018 We propose a tunnel field-effect transistor (TFET) having a trimmed gate (TG) structure, which considerably improves the subthreshold swing (SS). The TG structure truncates the needless long band-to-band tunneling (BTBT) paths to a “channel”, which ...
Hidehiro Asai +5 more
doaj +1 more source
Gallium Nitride in Heterogeneous Photocatalysis: Fundamental Insights and Emerging Trends
ChemistryEurope, Volume 3, Issue 6, November 11, 2025.Gallium nitride is a binary III–V direct band gap semiconductor. Recently, it has emerged as a promising material for next‐generation heterogeneous photocatalytic systems due to its unique electronic and structural properties. This review outlines the fundamental principles and key design strategies of heterogeneous photocatalysis and provides a ...
Hyotaik Kang, Chao‐Jun Li
wiley +1 more source
DESIGN OF SI/SIGE HETEROJUNCTION LINE TUNNEL FIELD EFFECT TRANSISTOR (TFET) WITH HIGH-K DIELECTRIC
, 2020 In this paper we propose a Si/SiGe heterojunction line tunnel field effect transistor (TFET) with high-K dielectric. The main objective of this device is to increase the ON current. In the case of Si TFETs the ON current is very low.
Flavia Princess +3 more
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Effects of Back-Gate Bias on Subthreshold Swing of Tunnel Field-Effect Transistor
, 2019 In this study, the effects of back-gate bias on the subthreshold swing (S) of a tunnel field-effect transistor (TFET) were discussed. The electrostatic characteristics of the back-gated TFET were obtained using technology computer-aided design (TCAD ...
Jaehong Lee, Garam Kim, Sangwan Kim
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Chemical and biochemical sensors based on silicon nanowire field-effect transistor arrays [PDF]
, 2014 Field-effect transistors (FETs) made from semiconducting nanowires have great potential as electronic biochemical sensors if they can be integrated as an array in a CMOS-compatible architecture together with microfluidic channels and interfacing ...
Wipf, Mathias
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Effect of metal work function of asymmetric dielectric tunnel FET on its performance
, 2021 In the present era, with the advancement of various non-conventional devices, hardware components dimensions are shrinking to great extent. Among those, significant part of researchers focus is drawn by Tunnel Field Effect Transistors (TFETs), because of
N. K. Niranjan +5 more
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Advanced Electronic MaterialsCompact in‐memory computing architectures are desirable to embed artificial intelligence (AI) in resource‐restricted edge devices. However, current technologies face limitations in both the area and energy efficiency. Here, a reconfigurable ferroelectric
Zhongyunshen Zhu +2 more
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A New On-Chip ESD Strategy Using TFETs-TCAD Based Device and Network Simulations
IEEE Journal of the Electron Devices Society, 2018 For the first time, this paper reports the quasi-static behavior and the applicability of the tunnel field effect transistor (TFET) for the on-chip electrostatic discharge (ESD) protection. ESD evaluations are performed on 28-nm fully depleted silicon-on-
Radhakrishnan Sithanandam +1 more
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The Tunnel Field-Effect Transistor
, 2016 Scaling of metal-oxide-semiconductor field-effect transistors (MOSFET) is hitting fundamental limits due to power issues. In this article, an alternative transistor concept, the tunnel FET (TFET), is discussed, which employs quantum mechanical band-to ...
Groeseneken, Guido +2 more
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