Results 61 to 70 of about 15,872,036 (205)

Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor

open access: yesMicromachines, 2019
L-shaped tunnel field-effect transistor (TFET) provides higher on-current than a conventional TFET through band-to-band tunneling in the vertical direction of the channel.
Junsu Yu   +7 more
doaj   +1 more source

Electrical Transport of Nb‐Doped MoS2 Homojunction P–N Diode: Investigating NDR and Avalanche Effect

open access: yesSmall, Volume 22, Issue 9, 12 February 2026.
Niobium (Nb)‐doped molybdenum disulfide (MoS2) p‐type–n‐type (p–n) homojunction diodes are engineered using thickness‐controlled homo‐interfaces. Current–voltage (I–V) characteristics reveal gate‐tunable rectification, wavelength‐dependent photoresponse, and low‐bias switching.
Ehsan Elahi   +10 more
wiley   +1 more source

Electrical characterization of si nanowire GAA-TFET based ondimensions downscaling

open access: yes, 2023
This research paper explains the effect of the dimensions of Gate-all-aroundSi nanowire tunneling field effect transistor (GAA Si-NW TFET) onON/OFF current ratio, drain induces barrier lowering (DIBL), sub-thresholdswing (SS), and threshold voltage (VT).
Firas Natheer (16958826)
core   +1 more source

Neuromorphic Device Based on Material and Device Innovation toward Multimode and Multifunction

open access: yesAdvanced Intelligent Systems, Volume 8, Issue 1, January 2026.
In the era of big data, multimodal and multifunctional neuromorphic devices offer significant opportunities in designing AI hardware. In this work, recent advances about emerging material systems and novel device structures in this field are summarized in detail. Potential applications are reviewed.
Feng Guo   +3 more
wiley   +1 more source

Effect of edge vacancies on performance of planar graphene tunnel field-effect transistor

open access: yes, 2017
The influence of edge vacancies on the working ability of the planar graphene tunnel field-effect transistor (TFET) is studied at various concentrations and distributions (normal, uniform, periodic) of defects. All calculations are performed by using the
V. L. Katkov, A. A. Glebov, V. A. Osipov
core   +1 more source

Roles of Gate-Oxide Thickness Reduction in Scaling Bulk and Thin-Body Tunnel Field-Effect Transistors [PDF]

open access: yes, 2017
Tunnel field-effect transistor (TFET) has recently been considered as a promising candidate for low-power integrated circuits. In this paper, we present an adequate examination on the roles of gate-oxide thickness reduction in scaling bulk and thin-body ...
Chun-Hsing Shih   +6 more
core   +1 more source

Simulation Based Investigation of Triple Heterojunction TFET (THJ-TFET) for Low Power Applications

open access: yes, 2023
We designed a new model tunnel feld-efect transistor (TFET) based on Triple Heterojunction Tunnel Field Efect Transistor (THJ-TFET) is investigated and designed in this paper.
Adilakshmi, G   +6 more
core   +1 more source

TBAL: Tunnel FET-Based Adiabatic Logic for Energy-Efficient, Ultra-Low Voltage IoT Applications

open access: yesIEEE Journal of the Electron Devices Society, 2019
A novel, tunnel field-effect transistor (TFET)-based adiabatic logic (TBAL) circuit topology has been proposed, evaluated and benchmarked with several device architectures (planar MOSFET, FinFET, and TFET) and AL implementations (efficient charge ...
Jheng-Sin Liu   +2 more
doaj   +1 more source

Design and Performance Analysis of Dielectrically Modulated Diagonal Tunneling TFET for Label Free Sensing

open access: yesIET Circuits, Devices &Systems, Volume 2026, Issue 1, 2026.
This paper presents a novel architecture the diagonal tunneling dielectrically modulated tunnel field effect transistor (DT‐DMTFET) for label‐free biosensing applications. The study employs TCAD (Silvaco TCAD) simulations to comprehensively analyze the behavior of the DT‐DMTFET biosensor focusing on key parameters such as drain current, sub‐threshold ...
I. Rama Satya Nageswara Rao   +2 more
wiley   +1 more source

A Comprehensive Study of Quantum Transport Effects on Graphene Nanoribbon Field‐Effect Transistors (GNRFET)

open access: yesMicro &Nano Letters, Volume 21, Issue 1, January/December 2026.
This study presents a numerical quantum transport analysis of graphene nanoribbon field‐effect transistors (GNRFETs) using the non‐equilibrium Green's function (NEGF) formalism. The results show that reducing the channel length and optimizing dielectric materials, such as HfSiO4, significantly enhance ON‐state current and the Ion/Ioff ratio.
Mahamudul Hassan Fuad
wiley   +1 more source

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