Results 61 to 70 of about 15,872,036 (205)
L-shaped tunnel field-effect transistor (TFET) provides higher on-current than a conventional TFET through band-to-band tunneling in the vertical direction of the channel.
Junsu Yu +7 more
doaj +1 more source
Electrical Transport of Nb‐Doped MoS2 Homojunction P–N Diode: Investigating NDR and Avalanche Effect
Niobium (Nb)‐doped molybdenum disulfide (MoS2) p‐type–n‐type (p–n) homojunction diodes are engineered using thickness‐controlled homo‐interfaces. Current–voltage (I–V) characteristics reveal gate‐tunable rectification, wavelength‐dependent photoresponse, and low‐bias switching.
Ehsan Elahi +10 more
wiley +1 more source
Electrical characterization of si nanowire GAA-TFET based ondimensions downscaling
This research paper explains the effect of the dimensions of Gate-all-aroundSi nanowire tunneling field effect transistor (GAA Si-NW TFET) onON/OFF current ratio, drain induces barrier lowering (DIBL), sub-thresholdswing (SS), and threshold voltage (VT).
Firas Natheer (16958826)
core +1 more source
Neuromorphic Device Based on Material and Device Innovation toward Multimode and Multifunction
In the era of big data, multimodal and multifunctional neuromorphic devices offer significant opportunities in designing AI hardware. In this work, recent advances about emerging material systems and novel device structures in this field are summarized in detail. Potential applications are reviewed.
Feng Guo +3 more
wiley +1 more source
Effect of edge vacancies on performance of planar graphene tunnel field-effect transistor
The influence of edge vacancies on the working ability of the planar graphene tunnel field-effect transistor (TFET) is studied at various concentrations and distributions (normal, uniform, periodic) of defects. All calculations are performed by using the
V. L. Katkov, A. A. Glebov, V. A. Osipov
core +1 more source
Roles of Gate-Oxide Thickness Reduction in Scaling Bulk and Thin-Body Tunnel Field-Effect Transistors [PDF]
Tunnel field-effect transistor (TFET) has recently been considered as a promising candidate for low-power integrated circuits. In this paper, we present an adequate examination on the roles of gate-oxide thickness reduction in scaling bulk and thin-body ...
Chun-Hsing Shih +6 more
core +1 more source
Simulation Based Investigation of Triple Heterojunction TFET (THJ-TFET) for Low Power Applications
We designed a new model tunnel feld-efect transistor (TFET) based on Triple Heterojunction Tunnel Field Efect Transistor (THJ-TFET) is investigated and designed in this paper.
Adilakshmi, G +6 more
core +1 more source
TBAL: Tunnel FET-Based Adiabatic Logic for Energy-Efficient, Ultra-Low Voltage IoT Applications
A novel, tunnel field-effect transistor (TFET)-based adiabatic logic (TBAL) circuit topology has been proposed, evaluated and benchmarked with several device architectures (planar MOSFET, FinFET, and TFET) and AL implementations (efficient charge ...
Jheng-Sin Liu +2 more
doaj +1 more source
This paper presents a novel architecture the diagonal tunneling dielectrically modulated tunnel field effect transistor (DT‐DMTFET) for label‐free biosensing applications. The study employs TCAD (Silvaco TCAD) simulations to comprehensively analyze the behavior of the DT‐DMTFET biosensor focusing on key parameters such as drain current, sub‐threshold ...
I. Rama Satya Nageswara Rao +2 more
wiley +1 more source
This study presents a numerical quantum transport analysis of graphene nanoribbon field‐effect transistors (GNRFETs) using the non‐equilibrium Green's function (NEGF) formalism. The results show that reducing the channel length and optimizing dielectric materials, such as HfSiO4, significantly enhance ON‐state current and the Ion/Ioff ratio.
Mahamudul Hassan Fuad
wiley +1 more source

