Results 41 to 50 of about 15,872,036 (205)
Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling [PDF]
, 2020 This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage ...
Abdul-Kadir, Firas Natheer +8 more
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Controlling Ambipolar Current in Tunneling FETs Using Overlapping Gate-on-Drain
IEEE Journal of the Electron Devices Society, 2014 In this paper, we have demonstrated that overlapping the gate on the drain can suppress the ambipolar conduction, which is an inherent property of a tunnel field effect transistor (TFET).
Dawit B. Abdi, M. Jagadesh Kumar
doaj +1 more source
Journal of Engineering Technology and Applied Physics, 2023 To meet the performance requirements of low power mobile devices, a device with a high ION/IOFF ratio at low-VDD is needed. TFETs are gaining popularity due to their low subthreshold slope and high transconductance compared to MOSFETs.
Tan Chun Fui, Ajay Kumar Singh
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ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam +3 more
wiley +1 more source
, 2021 Background: Power reduction is a serious design concern for submicron logic circuits, which can be achieved by scaling the supply voltage. Modern Field Effect Transistor (FET) circuits require at least 60 mV of gate voltage for better current drive at ...
Singh, Ajay Kumar, Tan, Chun Fui
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The Evolution of Semiconductor Devices: From Transistors to Quantum and Neuromorphic Computing
physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 8, August 2026.This review presents the evolution of semiconductor devices from BJTs to fin field‐effect transistors (FinFETs), nanowire, and carbon nanotube transistors. It highlights emerging materials, including SiC and GaN, and examines neuromorphic and quantum computing, industry applications, performance benchmarks, challenges, and future directions.
Manoharan Subramanian +6 more
wiley +1 more source
Nanomaterials, 2019 The practical use of tunnel field-effect transistors is retarded by the low on-state current. In this paper, the energy-band engineering of InAs/Si heterojunction and novel device structure of source-pocket concept are combined in a single tunnel field ...
Hongliang Lu +4 more
doaj +1 more source
IOP Conference Series: Materials Science and Engineering, 2021 Abstract TFETs (tunnel field effect transistor) are providing solution to affairs associated with conventional MOSFET devices such as short-channel effects (SCEs) and limitation of minimum (60 mV/decade) subthreshold slope (SS). TFET is a p-i-n diode which conducts in reverse bias and behaves like a transistor due to tunnelling mechanism
P Shilla, V Verma, R Kumar, A Kumar
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Electron‐Wave Interference in Zener Tunneling Induced by Dopant Clusters in Silicon pn Junctions
Advanced Quantum Technologies, Volume 9, Issue 7, July 2026.Current oscillations are revealed in the Zener tunneling regime of Si nanoscale pn junctions and are attributed to the interference of coherent electron‐waves in band‐to‐band tunneling transport. Temperature dependence, simulations of random dopant distributions, and numerical interference calculations collectively demonstrate that the interference ...
Daris Alfafa +4 more
wiley +1 more source
Low Power Consumption Gate-Tunable WSe2/SnSe2 van der Waals Tunnel Field-Effect Transistor
, 2022 Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have attracted attention as promising next-generation electronic devices and sensors. In this study, we fabricated a novel nanoelectronic device based on a black-phosphorus-gated WSe2/SnSe2 ...
Abdelkader Abderrahmane +2 more
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